Structural configuration for fieldeffect and junction transistors

Claim 1

A FIELD-EFFECT TRANSISTOR COMPRISING, IN COMBINATION, A BASIC ASSEMBLY CONSISTING OF A BODY OF INTRINSIC SEMICONDUCTOR HAVING TWO PARALLEL MAJOR SURFACES AND A PERIPHERAL SURFACE, A LAYER OF ONE TYPE OF POLAR IMPURITY FORMED IN SAID BODY ON ONE OF SAID MAJOR SURFACES AND EXTENDING TO SAID PERIPHERAL SURFACE AND FORMING A PART THEREOF, A LAYER OF SINGLE CRYSTAL SEMICONDUCTOR FORMED ON THE SAID LAYER OF ONE TYPE OF POLAR IMPURITY AND ALSO CONSTITUTING A PART OF SAID PERIPHERAL SURFACE, A CHANNEL IN THE FORM OF AN OPEN ANNULUS CONSISTING OF OPPOSITE TYPE POLAR IMPURITY FORMED IN SAID BASIC ASSEMBLY ADJACENT SAID PERIPHERAL SURFACE, SAID CHANNEL EXTENDING ALONG ITS LONGITUDINAL AXIS THROUGH THE BASIC ASSEMBLY IN PERPENDICULAR RELATIONSHIP TO SAID LAYER OF ONE TYPE POLAR IMPURITY WHEREBY SAID LAYER OF ONE TYPE POLAR IMPURITY IS DIVIDED PROVIDING A FIRST GATE EXTENDING INWARDLY OF SAID PERIPHERAL SURFACE TO ONE SIDE OF SAID CHANNEL AND A SECOND GATE IN CONTACT WITH THE SIDE OF SAID CHANNEL OPPOSITE TO SAID ONE SIDE, SAID CHANNEL HAVING A DISTRIBUTION OF CONDUCTIVITY OF MAXIMUM ADJACENT SAID FIRST AND SECOND GATES AND DIMINISHING IN A DIRECTION TOWARD THE CENTER OF SAID CHANNEL FROM EACH TO ONE ANNULAR END COMPRISING AN OHMIC CONTACT FORMED TO ONE ANNULAR END OF SAID CHANNEL, A DRAIN COMPRISING AN OHMIC CONTACT FORMED TO THE OPPOSITE ANNULAR END OF SAID CHANNEL, SAID GATE POSITIONED IN THE BASIC ASSEMBLY IMMEDIATELY ADJACENT TO SAID SOURCE.