Semiconductor integrated circuit device using field-effect transistors

Claim 1

AN INTEGRATED SEMICONDUCTOR DEVICE COMPRISING: (A) A BODY OF SINGLE CRYSTAL SEMICONDUCTOR MATERIAL, (B) A FIRST REGION OF SAID BODY OF ONE CONDUCTIVITY TYPE, (C) A SEOCND REGION OF THE BODY OF SAID ONE CONDUCTIVITY TYPE, (D) A FIRST GATE IN SAID BODY INCLUDING AT LEAST ONE REGION OF OPPOSITE CONDUCTIVITY TYPE DEFINED ADJACENT AN INTERMEDIATE PART OF SAID FIRST REGION, THE FIRST GATE DIVIDING THE FIRST REGION INTO FIRST AND SECOND PARTS WHICH ARE CONNECTED TOGETHER WITHIN THE BODY ONEY BY A NARROW FIRST CHANNEL PORTION UNDERLYING SAID FIRST GATE, THE FIRST GATE BEING CONTIGUOUS TO SAID FIRST CHANNEL PORTION BUT SEPARATED THEREFROM BY FIRST P-N JUNCTION MEANS. (E) A SEOCND GATE IN SAID BODY INCLUDING AT LEAST ONE REGION OF SAID OPPOSITE CONDUCTIVITY TYPE DEFINED ADJACENT AN INTERMEDIATE PART OF SAID SECOND REGION THE SECOND GATE DIVIDING THE SECOND REGION INTO FIRST AND SECOND PARTS WHICH ARE CONNECTED TOGETHER WITHIN THE BODY ONLY BY A NARROW SECOND CAHNNEL PORTION UNDERLYING SAID SECOND GATE, THE SECOND GATE BEING CONTIGUOUS TO SAID SECOND CAHNNEL PORTION BUT SEPARATED THEREFROM BY SECOND P-N JUNCTION MEANS, (F) CONDUCTIVE MEANS MAKING OHMIC CONNECTING IN COMMON TO THE FIRST PART OF THE SECOND REGION AND THE SECOND PART OF THE FIRST REGION (G) MEANS INCLUDING OHMIC CONTACTS FOR APPLYING OPERATING BIAS BETWEEN THE FIRST PART OF THE FIRST REGION AND THE SECOND PART OF THE SECOND REGION. (H) MEANS FOR APPLYING INPUT SIGNALS TO THE FIRST GATE, (I) AND MEANS FOR CONNECTING THE SECOND GATE TO A POINT ON SAID SECOND REGION SO THAT AT LEAST PART OF THE P-N JUNCTION BETWEEN THE SECOND GATE AND THE SECOND CHANNEL WILL BE REVERSE BIASED.