US3028655A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductive device
Assignee: AT&T Inc
•
Filing: 1955-03-23
•
Granted: 1962-04-10
•
Expires: 1975-03-23
Abstract
No abstract record available.
Inventors
- 👤 George C Dacey
- 👤 Charles A Lee
- 👤 Shockley William
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 11:24
CPC Classifications
H; H10; H10D; H10D10/00; C; C30; C30B; C30B23/00; C30B31/00; C30B31/06; H10D30/00; H10D30/80; H10D62/00; H10D62/10; H10D62/60; H10D99/00; H10P; H10P32/00; H10P32/10; H10P32/12; H10P32/17; H10P32/171; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S252/00; Y10S252/95; Y10S252/951
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
109 words
THE PROCESS FOR FORMING A JUNCTION TRANSISTOR COMPRISING THE STEPS OF HEATING A P-TYPE GERMANIUM WAFER IN ARSENIC VAPOR FOR A TIME AND AT A TEMPERATURE TO FORM AN N-TYPE ARSENIC-DIFFUSED SURFACE ZONE HAVING AN ARSENIC SURFACE CONCENTARTION NO GREATER THAN OF THE ORDER OF 1018 ATOMS PER CUBIC CENTIMETER, ALLOYING ALUMINUM OVER A SELECTED PORTION OF THE ARSENIC-DIFFUSED SURFACE ZONE FOR CONVERTING SAID PORTION TO P-TYPE CONDUCTIVITY, ETCHING AWAY A PORTION OF A GERMANIUM WAFER FOR FORMING ON THE ORIGINAL P-TYPE PORTION OF THE GERMANIUM WAFER A MESA WHICH INCLUDES THE ALUMINUM-ALLOYED AND ARSENICDIFFUSED PORTIONS OF THE WAFER AND PROVIDING EMITTER, BASE, AND COLLECTOR CONNECTIONS TO THE BODY.
Claim 2
Dependent Claim
109 words
THE PROCESS FOR FORMING A JUNCTION TRANSISTOR COMPRISING THE STEPS OF HEATING A P-TYPE GERMANIUM WAFER IN ARSENIC VAPOR FOR A TIME AND AT A TEMPERATURE TO FORM AN N-TYPE ARSENIC-DIFFUSED SURFACE ZONE HAVING AN ARSENIC SURFACE CONCENTARTION NO GREATER THAN OF THE ORDER OF 1018 ATOMS PER CUBIC CENTIMETER, ALLOYING ALUMINUM OVER A SELECTED PORTION OF THE ARSENIC-DIFFUSED SURFACE ZONE FOR CONVERTING SAID PORTION TO P-TYPE CONDUCTIVITY, ETCHING AWAY A PORTION OF A GERMANIUM WAFER FOR FORMING ON THE ORIGINAL P-TYPE PORTION OF THE GERMANIUM WAFER A MESA WHICH INCLUDES THE ALUMINUM-ALLOYED AND ARSENICDIFFUSED PORTIONS OF THE WAFER AND PROVIDING EMITTER, BASE, AND COLLECTOR CONNECTIONS TO THE BODY.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1965-04-09 | 1965-10-09 | 1966-04-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1969-04-09 | 1969-10-09 | 1970-04-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1973-04-09 | 1973-10-09 | 1974-04-10 | $7700.00 | Window Closed / Lapsed |