US2793145A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a junction transistor
Assignee: GTE Sylvania Inc
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Filing: 1952-06-13
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Granted: 1957-05-21
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Expires: 1972-06-13
Abstract
No abstract record available.
Inventors
- 👤 Edward N Clarke
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:17
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/17; H10P32/171; H10P32/14; H10P32/1408; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/919
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
177 words
THE METHOD OF FORMING A JUNCTION TRANSISTOR COMPRISING THE STEPS OF EXPOSING ONE FACE OF A BODY OF SEMICONDUCTOR MATERIAL OF THE GROUP CONSISTING OF GERMANIUM AND SILICON, OF ONE CONDUCTIVITY TYPE, TO A FIRST IMPURITY CAPABLE OF IMPARTING THE OPPOSITE CONDUCTIVITY TYPE TO SAID MATERIAL, HEATING SAID BODY TO CAUSE DIFFUSION OF SAID IMPURITY INTO SAID BODY AND TO CONVERT A ZONE OF SAID BODY INTO SAID OPPOSITE CONDUCTIVITY TYPE, DEPOSITING ON SAID FACE A LAYER OF A SECOND IMPURITY CAPABLE OF IMPARTING SAID ONE CONDUCTIVITY TYPE TO THE MATERIAL IN SAID ZONE, HEATING THE BODY AT A TEMPERATURE AND FOR A TIME SUFFICIENT TO CAUSE DUFFUSION OF ONLY A PORTION OF SAID LAYER OF IMPURITY INTO SAID ZONE AND TO CAUSE RECONVERSION OF A REGION OF SAID ZONE INTO MATERIAL OF SAID ONE CONDUCTIVITY TYPE AND APPLYING ELECTRODES TO THE ORIGINAL UNCONVERTED PORTION OF SAID BODY AND THE PORTION OF SAID ZONE NOT RECONVERTED AND A CONNECTION TO THE OHMIC TERMINAL FORMED BY THE PORTION OF SAID LAYER OF IMPURITY NOT DIFFUSED INTO SAID ZONE.
Claim 2
Independent Claim
177 words
THE METHOD OF FORMING A JUNCTION TRANSISTOR COMPRISING THE STEPS OF EXPOSING ONE FACE OF A BODY OF SEMICONDUCTOR MATERIAL OF THE GROUP CONSISTING OF GERMANIUM AND SILICON, OF ONE CONDUCTIVITY TYPE, TO A FIRST IMPURITY CAPABLE OF IMPARTING THE OPPOSITE CONDUCTIVITY TYPE TO SAID MATERIAL, HEATING SAID BODY TO CAUSE DIFFUSION OF SAID IMPURITY INTO SAID BODY AND TO CONVERT A ZONE OF SAID BODY INTO SAID OPPOSITE CONDUCTIVITY TYPE, DEPOSITING ON SAID FACE A LAYER OF A SECOND IMPURITY CAPABLE OF IMPARTING SAID ONE CONDUCTIVITY TYPE TO THE MATERIAL IN SAID ZONE, HEATING THE BODY AT A TEMPERATURE AND FOR A TIME SUFFICIENT TO CAUSE DUFFUSION OF ONLY A PORTION OF SAID LAYER OF IMPURITY INTO SAID ZONE AND TO CAUSE RECONVERSION OF A REGION OF SAID ZONE INTO MATERIAL OF SAID ONE CONDUCTIVITY TYPE AND APPLYING ELECTRODES TO THE ORIGINAL UNCONVERTED PORTION OF SAID BODY AND THE PORTION OF SAID ZONE NOT RECONVERTED AND A CONNECTION TO THE OHMIC TERMINAL FORMED BY THE PORTION OF SAID LAYER OF IMPURITY NOT DIFFUSED INTO SAID ZONE.
References Cited (Backward Citations)
US2701326A
Cited
US2561411A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1960-05-20 | 1960-11-19 | 1961-05-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1964-05-20 | 1964-11-19 | 1965-05-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1968-05-20 | 1968-11-19 | 1969-05-21 | $7700.00 | Window Closed / Lapsed |