Patent US3181981A successfully refreshed from Google Patents.
US3181981A
Expired / Lapsed
US
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Semi-conductor device with copper-boron alloyed electrode and method of making the same
Assignee: US Philips Corp
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Filing: 1961-10-30
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Granted: 1965-05-04
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Expires: 1981-10-30
Abstract
No abstract record available.
Inventors
- 👤 Benny Alan Hugh Berger
- 👤 Trainor Albert
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 12:06
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D10/00; H10D62/00; H10D62/10; H10D62/60; H10D62/80; H10D62/83; H10D62/834; H10D99/00; H10P; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S420/00; Y10S420/903
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
106 words
A METHOD OF MAKING A SEMICONDUCTOR DEVICE, COMPRISING FORMING AN ALLOY MASS CONSISTING ESSENTIALLY OF AT LEAST ABOUT 0.3% BY WEIGHT OF BORON AND COPPER, PROVIDING A SEMICONDUCTIBE CRYSTALLINE BODY, FUSING AND ALLOYING AT A SURFACE PORTION OF SAID BODY AT LEAST A PORTION OF SAID ALLOY MASS TO FORM THEREIN A RECRYSTALLIZED ZONE CONTAINING AT LEAST COPPER AND BORON, SAID RECRYSTALLIZED ZONE FORMING A P-N RECTIFYING JUNCTION WHEN SAID SURFACE PORTION IS OF N-TYPE CONDUCTIVITY AND FORMING A P+-P JUNCTION WHEN SAID SURFACE PORTION IS OF P-TYPE CONDUCTIVITY, THE MEAN BORON CONTENT OF THE SAID RECRYSTALLIZED ZONE BEING AT LEAST 5X1019 ATOMS PER CUBIC CENTIMETER.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-05-03 | 1968-11-02 | 1969-05-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-05-03 | 1972-11-02 | 1973-05-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-05-03 | 1976-11-02 | 1977-05-04 | $7700.00 | Window Closed / Lapsed |