Method of producing a semiconductor device of the junction type

Claim 1

IN A METHOD OF FORMING A P-N JUNCTION IN, AND A METALLIC TERMINAL CONTACT ON, S MONOCRYSTALLINE SILICON SEMICONDUCTOR BODY, THE IMPROVEMENT COMPRISING CONTACTING GOLD WITH A SURFACE OF THE SILICON BODY, A SURFACE OF THE GOLD HAVING IN CONTACT THEREWITH A SOLID PHASE BORON DROPING SUBSTANCE TAKEN FROM THE GROUP CONSISTING OF BOROM AND COMPOUNDS OF BORON AND OXYGEN, SAID GOLD CONSISTING ESSENTIALLY OF GOLD, UNALLOYED WITH THE SILICON, HEATING TO PRODUCE AND TO MELT THE GOLD-SILICON ALLOY FORMED AT SAID SURFACE, WHEREBY BORON PENETRATES INTO AND THROUGH THE MOLTEN GOLD-SILICON ALLOY, THE TEMPERATURE BEING BELOW THE MELTING POINT OF SILICON, THE BORON THAT HAS SO PENETRATED ADVANCING TO THE BOUNDARY REGION OF THE MOLTEN ALLOY AND THE UNMELTED SILICON, AND DURING THE SUBSEQUENT SOLIDIFICATION THE BORON THEREBY BEING INCORPORATED IN THE SILICON RE-SOLIDIFYING FROM THE MELT.