Patent US1822996A successfully refreshed from Google Patents.
US2877147A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Alloyed semiconductor contacts
Assignee: AT&T Inc
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Filing: 1955-12-01
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Granted: 1959-03-10
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Expires: 1975-12-01
Abstract
No abstract record available.
Inventors
- 👤 Carl D Thurmond
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 18:20
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/834; C; C30; C30B; C30B31/00; C30B31/04; H10D1/00; H10D1/40; H10D48/00; H10D48/30; H10D48/38; H10P; H10P32/00; H10P32/10; H10P32/16; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S252/00; Y10S252/95
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
121 words
THE METHOD OF PRODUCING A SUBSTANBTIALLY PLANAR ALLOY CONNECTION TO A PORTION OF A BODY CONSISTING ESSENTIALLY OF CRYSTALLINE SEMICONDUCTIVE MATERIAL WHICH COMPRISES THE STEPS OF PLACING UPON SAID PORTION AN ALLOY MASS COMPRISING AN ADDITIONAL AMOUNT OF SAID SEMICONDUCTIVE MATERIAL AND A METAL WHICH IS A SOLVENT THEREFOR. SAID ALLOY MASS HVONG A MELTING POINT BELOW THAT OF SAID SEMICONDUCTIVE MATERIAL AND HAVING A COMPOSITION SUCH THAT THE LIQUID PHASE AT ITS MELTING POINT IS SATURATED WITH RESPECT TO SAID SEMICONDUCTIVE MATERIAL, HEATING THE INTERFACIAL REGION BETWEEN SAID PORTION AND SAID ALLOY MASS TO A TEMPERATURE ABOVE THE MELTING POINT OF SAID ALLOY MASS AND BELOW THE MELTING POINT OF SAID SEMICONDUCTIVE MATERIAL, AND COOLING THE ASSEMBLY TO ROOM TEMPERATURE.
Claim 2
Independent Claim
121 words
THE METHOD OF PRODUCING A SUBSTANBTIALLY PLANAR ALLOY CONNECTION TO A PORTION OF A BODY CONSISTING ESSENTIALLY OF CRYSTALLINE SEMICONDUCTIVE MATERIAL WHICH COMPRISES THE STEPS OF PLACING UPON SAID PORTION AN ALLOY MASS COMPRISING AN ADDITIONAL AMOUNT OF SAID SEMICONDUCTIVE MATERIAL AND A METAL WHICH IS A SOLVENT THEREFOR. SAID ALLOY MASS HVONG A MELTING POINT BELOW THAT OF SAID SEMICONDUCTIVE MATERIAL AND HAVING A COMPOSITION SUCH THAT THE LIQUID PHASE AT ITS MELTING POINT IS SATURATED WITH RESPECT TO SAID SEMICONDUCTIVE MATERIAL, HEATING THE INTERFACIAL REGION BETWEEN SAID PORTION AND SAID ALLOY MASS TO A TEMPERATURE ABOVE THE MELTING POINT OF SAID ALLOY MASS AND BELOW THE MELTING POINT OF SAID SEMICONDUCTIVE MATERIAL, AND COOLING THE ASSEMBLY TO ROOM TEMPERATURE.
References Cited (Backward Citations)
US2629672A
Cited
US2757324A
Cited
US2762730A
Cited
US2742383A
Cited
FR1088371A
Cited
US2736847A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1962-03-09 | 1962-09-08 | 1963-03-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1966-03-09 | 1966-09-08 | 1967-03-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1970-03-09 | 1970-09-08 | 1971-03-10 | $7700.00 | Window Closed / Lapsed |