US2837448A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating semiconductor pn junctions
Assignee: AT&T Inc
•
Filing: 1953-10-26
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Granted: 1958-06-03
•
Expires: 1973-10-26
Abstract
No abstract record available.
Inventors
- 👤 Carl D Thurmond
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 07:31
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/834; C; C30; C30B; C30B31/00; C30B31/04; H10D1/00; H10D1/40; H10D48/00; H10D48/30; H10D48/38; H10P; H10P32/00; H10P32/10; H10P32/16; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S252/00; Y10S252/95
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
142 words
THE METHOD OF PRODUCING A SEMICONDUCTOR PN JUNCTION WHICH COMPRISES PLACING A SIGNIFICANT IMPURITY DETERMINATIVE OF ONE CONDUCTIVELY TYPE UPON CRYSTALLINE SEMICONDUCTIVE MATERIAL OF OPPOSITIE CONDUCTIVELY TYPE, HEATING THE ASSEMBLY TO A TEMPERATURE ABOVE THE EUTECTIC TERMPERATURE OF SAID IMPURITY AND MATERIAL AND BELOW THE MELTING POINT OF SAID MATERIAL, SLOWLY COOLING THE ASSEMBLY TO A TEMPERATURE BETWEEN THE INITIAL TEMPERATURE AND SAID EUTECTIC TEMPERATURE FOR FORMING A LAYER OF THE ONE CONDUCTIVITY TYPE ON THE SURFACE OF THE SEMICONDUCTIVE BODY IN CONTACT WITH THE MOLTEN LAYER, FLOODING THE RESULTING COMBINATION WITH A MOLTEN METAL WHICH IS APPRECIABLY SOFTER THAN AND WHICH HAS A MELTING POINT SUBSTANTIALLY BELOW THAT OF SAID IMPRUITY AND FURTHER CHARACTERIZED IN THAT SAID SEMI-CONDUCTIVE MATERIAL AND SAID IMPURITY ARE ONLY SLIGHTLT SOLUBLE IN SAID MOLTEN METAL AT ITS MELTING POINT, AND COOLING THE PRODUCT TO ROOM TEMPERATURE.
Claim 2
Independent Claim
142 words
THE METHOD OF PRODUCING A SEMICONDUCTOR PN JUNCTION WHICH COMPRISES PLACING A SIGNIFICANT IMPURITY DETERMINATIVE OF ONE CONDUCTIVELY TYPE UPON CRYSTALLINE SEMICONDUCTIVE MATERIAL OF OPPOSITIE CONDUCTIVELY TYPE, HEATING THE ASSEMBLY TO A TEMPERATURE ABOVE THE EUTECTIC TERMPERATURE OF SAID IMPURITY AND MATERIAL AND BELOW THE MELTING POINT OF SAID MATERIAL, SLOWLY COOLING THE ASSEMBLY TO A TEMPERATURE BETWEEN THE INITIAL TEMPERATURE AND SAID EUTECTIC TEMPERATURE FOR FORMING A LAYER OF THE ONE CONDUCTIVITY TYPE ON THE SURFACE OF THE SEMICONDUCTIVE BODY IN CONTACT WITH THE MOLTEN LAYER, FLOODING THE RESULTING COMBINATION WITH A MOLTEN METAL WHICH IS APPRECIABLY SOFTER THAN AND WHICH HAS A MELTING POINT SUBSTANTIALLY BELOW THAT OF SAID IMPRUITY AND FURTHER CHARACTERIZED IN THAT SAID SEMI-CONDUCTIVE MATERIAL AND SAID IMPURITY ARE ONLY SLIGHTLT SOLUBLE IN SAID MOLTEN METAL AT ITS MELTING POINT, AND COOLING THE PRODUCT TO ROOM TEMPERATURE.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1961-06-02 | 1961-12-02 | 1962-06-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1965-06-02 | 1965-12-02 | 1966-06-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1969-06-02 | 1969-12-02 | 1970-06-03 | $7700.00 | Window Closed / Lapsed |