US2725316A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of preparing pn junctions in semiconductors
Assignee: AT&T Inc
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Filing: 1953-05-18
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Granted: 1955-11-29
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Expires: 1973-05-18
Abstract
No abstract record available.
Inventors
- 👤 Calvin S Fuller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 21:12
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/50
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
44 words
THE METHOD OF FABRICATING A SEMICONDUCTIVE BODY WHICH COMPRISES IMMERSING A BODY OF P-TYPE SEMICONDUCTIVE MATERIAL SELECTED FROM THE GROUP CONSISTING OF SILICON AND GERMANIUM IN A MOLTEN SOLUTION OF LITHIUM IN A LOW MELTING POINT METAL AND REMOVING SAID BODY FROM SAID SOLUTION.
Claim 2
Independent Claim
44 words
THE METHOD OF FABRICATING A SEMICONDUCTIVE BODY WHICH COMPRISES IMMERSING A BODY OF P-TYPE SEMICONDUCTIVE MATERIAL SELECTED FROM THE GROUP CONSISTING OF SILICON AND GERMANIUM IN A MOLTEN SOLUTION OF LITHIUM IN A LOW MELTING POINT METAL AND REMOVING SAID BODY FROM SAID SOLUTION.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1958-11-28 | 1959-05-30 | 1959-11-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1962-11-28 | 1963-05-30 | 1963-11-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1966-11-28 | 1967-05-30 | 1967-11-29 | $7700.00 | Window Closed / Lapsed |