Patent US2370907A successfully refreshed from Google Patents.
Patent US2973290A successfully refreshed from Google Patents.
US2973290A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Production of semi-conductor bodies by impurity diffusion through station ary interface
Assignee: The General Electric Company PLC
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Filing: 1957-07-02
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Granted: 1961-02-28
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Expires: 1977-07-02
Abstract
No abstract record available.
Inventors
- 👤 Mlavsky Abraham Isaac
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 13:23
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/16; H10P32/17; H10P32/171
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
182 words
A METHOD OF PRODUCING A SEMICONDUCTOR BODY INCLUDING THE STEPS OF ESTABLISHING A SYSTEM COMPRISING A SOLID BODY OF A SEMICONDUCTOR IN CONTACT WITH A MOLTEN MASS OF THE SEMICONDUCTOR, THE MOLTEN MASS CONTAINING A SIGNIFICANT IMPURITY AT A CONCENTRATION WHICH IS APPRECIABLY GREATER THAN 1/K TIMES THE CONCENTRATION OF SAID IMPURITY IN AT LEAST PART OF THE REGION OF THE SOLID BODY WHICH IS IN CONTACT WITH THE MOLTEN MASS, WHERE K IS THE PARTITION COEFFICIENT OF THE IMPURITY BETWEEN THE SOLID AND LIQUID PHASES OF THE SEMICONDUCTOR, MAINTAINING THE TEMPERATURE AND PRESSURE CONDITIONS IN THE SYSTEM AT THE INTERFACE BETWEEN THE SOLID BODY AND THE MOLTEN MASS CONSTANT SO AS TO MAINTAIN SAID INTERFACE STATIONARY FOR A TIME SUFFICIENT FOR APPRECIABLE DIFFUSION OF SAID IMPURITY TO OCCUR FROM THE MOLTEN MASS INTO THE SOLID BODY, SUBSEQUENTLY SOLIDIFYING AT LEAST PART OF THE MOLTEN MASS SO THAT THE SOLIDIFIED MATERIAL AND THE ORIGINAL SOLID BODY FORM AN INTEGRAL RESULTANT SOLID BODY, AND EVAPORATING SAID IMPURITY SUBSTANTIALLY COMPLETELY FROM THE MOLTEN MASS AFTER THE DIFFUSION AND BEFORE THE COMPLETION OF THE SOLIDIFICATION.
Claim 2
Independent Claim
182 words
A METHOD OF PRODUCING A SEMICONDUCTOR BODY INCLUDING THE STEPS OF ESTABLISHING A SYSTEM COMPRISING A SOLID BODY OF A SEMICONDUCTOR IN CONTACT WITH A MOLTEN MASS OF THE SEMICONDUCTOR, THE MOLTEN MASS CONTAINING A SIGNIFICANT IMPURITY AT A CONCENTRATION WHICH IS APPRECIABLY GREATER THAN 1/K TIMES THE CONCENTRATION OF SAID IMPURITY IN AT LEAST PART OF THE REGION OF THE SOLID BODY WHICH IS IN CONTACT WITH THE MOLTEN MASS, WHERE K IS THE PARTITION COEFFICIENT OF THE IMPURITY BETWEEN THE SOLID AND LIQUID PHASES OF THE SEMICONDUCTOR, MAINTAINING THE TEMPERATURE AND PRESSURE CONDITIONS IN THE SYSTEM AT THE INTERFACE BETWEEN THE SOLID BODY AND THE MOLTEN MASS CONSTANT SO AS TO MAINTAIN SAID INTERFACE STATIONARY FOR A TIME SUFFICIENT FOR APPRECIABLE DIFFUSION OF SAID IMPURITY TO OCCUR FROM THE MOLTEN MASS INTO THE SOLID BODY, SUBSEQUENTLY SOLIDIFYING AT LEAST PART OF THE MOLTEN MASS SO THAT THE SOLIDIFIED MATERIAL AND THE ORIGINAL SOLID BODY FORM AN INTEGRAL RESULTANT SOLID BODY, AND EVAPORATING SAID IMPURITY SUBSTANTIALLY COMPLETELY FROM THE MOLTEN MASS AFTER THE DIFFUSION AND BEFORE THE COMPLETION OF THE SOLIDIFICATION.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1964-02-28 | 1964-08-29 | 1965-02-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1968-02-28 | 1968-08-29 | 1969-02-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1972-02-28 | 1972-08-29 | 1973-02-28 | $7700.00 | Window Closed / Lapsed |