US2815303A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making junction single crystals
Assignee: Raytheon Co
•
Filing: 1953-07-24
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Granted: 1957-12-03
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Expires: 1973-07-24
Abstract
No abstract record available.
Inventors
- 👤 Charles G Smith
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 01:42
CPC Classifications
C; C30; C30B; C30B11/00; C30B11/002
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
138 words
THE METHOD OF MAKING JUNCTION TYPE SEMICONDUCTOR CRYSTALS WHICH CONSISTS IN FORMING A SINGLE CRYSTAL OF SEMI-CONDUCTOR MATERIAL SELECTED FROM THE GROUP COMPRISING GERMANIUM AND SILICON, SAID MATERIAL HAVING A PREDETERMINED CONCENTRATION OF A P-TYPE DOPING ELEMENT AND AN N-TYPE DOPING ELEMENT THEREIN, SAID ELEMENTS EACH HAVING A SUBSTANTIALLY DIFFERENT RATE OF EVAPORATION FROM SAID MATERIAL, AND AN EVAPORATION TEMPERATURE WHICH IS BELOW THE MELTING TEMPERATURE OF SAID MATERIAL, THE INITIAL CONCENTRATION OF SAID ELEMENT HAVING THE HIGHER RATE OF EVAPORATION BEING GREATER THAN THE CONCENTRATION OF THEE OTHER OF SAID ELEMENTS, HEATING AND MAINTAINING SAID CRYSTAL AT AN ELEVATED TEMPERATURE FOR A SUFFICIENT LENGTHTH OF TIME TO CAUSE THE CONCENTRATION OF SAID ELEMENT HAVING THE HIGHER RATE OF EVAPORATION TO FALL BELOW THE CONCENTRATION OF THE OTHER OF SAID ELEMENTS IN AN EXTERIOR LAYER OF SAID CRYSTAL.
Claim 2
Independent Claim
138 words
THE METHOD OF MAKING JUNCTION TYPE SEMICONDUCTOR CRYSTALS WHICH CONSISTS IN FORMING A SINGLE CRYSTAL OF SEMI-CONDUCTOR MATERIAL SELECTED FROM THE GROUP COMPRISING GERMANIUM AND SILICON, SAID MATERIAL HAVING A PREDETERMINED CONCENTRATION OF A P-TYPE DOPING ELEMENT AND AN N-TYPE DOPING ELEMENT THEREIN, SAID ELEMENTS EACH HAVING A SUBSTANTIALLY DIFFERENT RATE OF EVAPORATION FROM SAID MATERIAL, AND AN EVAPORATION TEMPERATURE WHICH IS BELOW THE MELTING TEMPERATURE OF SAID MATERIAL, THE INITIAL CONCENTRATION OF SAID ELEMENT HAVING THE HIGHER RATE OF EVAPORATION BEING GREATER THAN THE CONCENTRATION OF THEE OTHER OF SAID ELEMENTS, HEATING AND MAINTAINING SAID CRYSTAL AT AN ELEVATED TEMPERATURE FOR A SUFFICIENT LENGTHTH OF TIME TO CAUSE THE CONCENTRATION OF SAID ELEMENT HAVING THE HIGHER RATE OF EVAPORATION TO FALL BELOW THE CONCENTRATION OF THE OTHER OF SAID ELEMENTS IN AN EXTERIOR LAYER OF SAID CRYSTAL.
References Cited (Backward Citations)
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Cited
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1960-12-02 | 1961-06-03 | 1961-12-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1964-12-02 | 1965-06-03 | 1965-12-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1968-12-02 | 1969-06-03 | 1969-12-03 | $7700.00 | Window Closed / Lapsed |