Jsion

Claim 1

THE METHOD OF MAKING A SEMICONDUCTOR DRVICE, SAID METHOD COMPRISING GROWING A LENGTH OF CRYSTAL FROM A MELT OF SEMICONDUCTOR MATERIAL HAVING A CONCENTRATION OF A FIRST ELECTRICAL CONDUCTIVITY TYPE DETERMINING IMPURITY THEREIN TO FORM A FIRST REGION IN SAID CRYSTAL IN WHICH SAID FIRST TYPE IMPURITY IS THE PREDOMINANT IMPURITY, INTRODUCING A CONCENTRATION OF A SECOND ELECTRICAL CONDUCTIVITY TYPE DETERMINING IMPURITY AND AN ADDITIONAL CONCENTRATION OF SAID FIRST TYPE IMPURITY INTO SAID MELT, THE CONCENTRATION OF SAID FIRST TYPE IMPURITY BEING INSUFFICIENT TO OVERCOME THE CONCENTRATION OF SAID FIRST ELECTRICAL CONDUCTIVITY TYPE DETERMINING IMPURITY IN A SUBSEQUENTLY GROWN PORTION OF SAID CRYSTAL, SAID FIRST AND SECOND TYPE IMPURITIES HAVING SUNSTANTIALLY DIFFERENT DIFFUSION CONTANTS, CONTINUING THE GROWTH OF SAID CRYSTAL TO FORM A SECOND REGION THEREIN IN WHICH BOTH TYPES OF SAID IMPURITIES ARE PRESENT BUT IN WHICH THE CONCENTRATION OF SAID FIRST TYPE IMPURITY IS GREATER THAN THE CONCENTRATION OF SAID SECOND TYPE IMPURITY, MAINTAINING SAID CRYSTAL AT A TEMPERATURE BELOW THE MELTING POINT OF SAID CRYSTAL FOR A TIME SUFFICIENT TO CAUSE SAID SECOND TYPE IMPURITY TO DIFFUSE WITHIN SAID CRYSTAL TO CONVERT A PORTION OF AT LEAST ONE OF SAID CRYSTAL TO CONVERT A PORTION MEDIATE SAID FIRST TWO REGION IN WHICH THE CONCENTRATION OF SAID SECOND TYPE IMPURITY PREDOMINATES OVER THE CONCENTRATION OF SAID FIRST TYPE IMPURITY, AND ESTABLISHING ELECTRICAL CONNECTIONS TO EACH OF SAID REGIONS.

Claim 2

THE METHOD OF MAKING A SEMICONDUCTOR DRVICE, SAID METHOD COMPRISING GROWING A LENGTH OF CRYSTAL FROM A MELT OF SEMICONDUCTOR MATERIAL HAVING A CONCENTRATION OF A FIRST ELECTRICAL CONDUCTIVITY TYPE DETERMINING IMPURITY THEREIN TO FORM A FIRST REGION IN SAID CRYSTAL IN WHICH SAID FIRST TYPE IMPURITY IS THE PREDOMINANT IMPURITY, INTRODUCING A CONCENTRATION OF A SECOND ELECTRICAL CONDUCTIVITY TYPE DETERMINING IMPURITY AND AN ADDITIONAL CONCENTRATION OF SAID FIRST TYPE IMPURITY INTO SAID MELT, THE CONCENTRATION OF SAID FIRST TYPE IMPURITY BEING INSUFFICIENT TO OVERCOME THE CONCENTRATION OF SAID FIRST ELECTRICAL CONDUCTIVITY TYPE DETERMINING IMPURITY IN A SUBSEQUENTLY GROWN PORTION OF SAID CRYSTAL, SAID FIRST AND SECOND TYPE IMPURITIES HAVING SUNSTANTIALLY DIFFERENT DIFFUSION CONTANTS, CONTINUING THE GROWTH OF SAID CRYSTAL TO FORM A SECOND REGION THEREIN IN WHICH BOTH TYPES OF SAID IMPURITIES ARE PRESENT BUT IN WHICH THE CONCENTRATION OF SAID FIRST TYPE IMPURITY IS GREATER THAN THE CONCENTRATION OF SAID SECOND TYPE IMPURITY, MAINTAINING SAID CRYSTAL AT A TEMPERATURE BELOW THE MELTING POINT OF SAID CRYSTAL FOR A TIME SUFFICIENT TO CAUSE SAID SECOND TYPE IMPURITY TO DIFFUSE WITHIN SAID CRYSTAL TO CONVERT A PORTION OF AT LEAST ONE OF SAID CRYSTAL TO CONVERT A PORTION MEDIATE SAID FIRST TWO REGION IN WHICH THE CONCENTRATION OF SAID SECOND TYPE IMPURITY PREDOMINATES OVER THE CONCENTRATION OF SAID FIRST TYPE IMPURITY, AND ESTABLISHING ELECTRICAL CONNECTIONS TO EACH OF SAID REGIONS.