US2818361A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Heat treatment of silicon transistor bars
Assignee: Texas Instruments Inc
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Filing: 1956-11-13
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Granted: 1957-12-31
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Expires: 1976-11-13
Abstract
No abstract record available.
Inventors
- 👤 Robert E Anderson
- 👤 William L Medlin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 14:38
CPC Classifications
C; C30; C30B; C30B15/00; C30B15/02; C30B15/04; H; H10; H10P; H10P95/00; H10P95/90
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
83 words
A METHOD OF MAKING TRANSISTOR BARS THAT COMPRISES FORMING A GROW JUNCTION SILICON TRANSISTOR BAR COMPRISING A COLLECTOR PORTION DOPED WITH ANTIMONY TO GIVE IT N-TYPE CONDUCTIVITY, A BASE PORTION BETWEEN 0002 AND 0007 INCH IN THICKNESS ADDITIONALLY DOPED WITH SUFFICIENT ALUMINUM TO GIVE IT A P-TYPE CONDUCTIVITY AND A RESISTIVITY OF ABOUT 0.8 OHM-CENTIMETER, AN EMITTER PORTION STILL FURTHER DOPED WITH ARSENIC TO GIVE IT N-TYPE CONDUCTIVITY; AND HEATING SAID BAR TO AROUND 500*C. TO 550*C. FOR AROUND ONE AND ONE-HALF HOURS.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1960-12-30 | 1961-07-01 | 1961-12-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1964-12-30 | 1965-07-01 | 1965-12-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1968-12-30 | 1969-07-01 | 1969-12-31 | $7700.00 | Window Closed / Lapsed |