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US2973290A Expired / Lapsed US ⏱️ 0.0 years remaining

Production of semi-conductor bodies by impurity diffusion through station ary interface

Assignee: The General Electric Company PLC
•
Filing: 1957-07-02
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Granted: 1961-02-28
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Expires: 1977-07-02
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Abstract

No abstract record available.

Inventors

  • 👤 Mlavsky Abraham Isaac

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 04:07
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/16; H10P32/17; H10P32/171

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 182 words
A METHOD OF PRODUCING A SEMICONDUCTOR BODY INCLUDING THE STEPS OF ESTABLISHING A SYSTEM COMPRISING A SOLID BODY OF A SEMICONDUCTOR IN CONTACT WITH A MOLTEN MASS OF THE SEMICONDUCTOR, THE MOLTEN MASS CONTAINING A SIGNIFICANT IMPURITY AT A CONCENTRATION WHICH IS APPRECIABLY GREATER THAN 1/K TIMES THE CONCENTRATION OF SAID IMPURITY IN AT LEAST PART OF THE REGION OF THE SOLID BODY WHICH IS IN CONTACT WITH THE MOLTEN MASS, WHERE K IS THE PARTITION COEFFICIENT OF THE IMPURITY BETWEEN THE SOLID AND LIQUID PHASES OF THE SEMICONDUCTOR, MAINTAINING THE TEMPERATURE AND PRESSURE CONDITIONS IN THE SYSTEM AT THE INTERFACE BETWEEN THE SOLID BODY AND THE MOLTEN MASS CONSTANT SO AS TO MAINTAIN SAID INTERFACE STATIONARY FOR A TIME SUFFICIENT FOR APPRECIABLE DIFFUSION OF SAID IMPURITY TO OCCUR FROM THE MOLTEN MASS INTO THE SOLID BODY, SUBSEQUENTLY SOLIDIFYING AT LEAST PART OF THE MOLTEN MASS SO THAT THE SOLIDIFIED MATERIAL AND THE ORIGINAL SOLID BODY FORM AN INTEGRAL RESULTANT SOLID BODY, AND EVAPORATING SAID IMPURITY SUBSTANTIALLY COMPLETELY FROM THE MOLTEN MASS AFTER THE DIFFUSION AND BEFORE THE COMPLETION OF THE SOLIDIFICATION.
Claim 2
Independent Claim 182 words
A METHOD OF PRODUCING A SEMICONDUCTOR BODY INCLUDING THE STEPS OF ESTABLISHING A SYSTEM COMPRISING A SOLID BODY OF A SEMICONDUCTOR IN CONTACT WITH A MOLTEN MASS OF THE SEMICONDUCTOR, THE MOLTEN MASS CONTAINING A SIGNIFICANT IMPURITY AT A CONCENTRATION WHICH IS APPRECIABLY GREATER THAN 1/K TIMES THE CONCENTRATION OF SAID IMPURITY IN AT LEAST PART OF THE REGION OF THE SOLID BODY WHICH IS IN CONTACT WITH THE MOLTEN MASS, WHERE K IS THE PARTITION COEFFICIENT OF THE IMPURITY BETWEEN THE SOLID AND LIQUID PHASES OF THE SEMICONDUCTOR, MAINTAINING THE TEMPERATURE AND PRESSURE CONDITIONS IN THE SYSTEM AT THE INTERFACE BETWEEN THE SOLID BODY AND THE MOLTEN MASS CONSTANT SO AS TO MAINTAIN SAID INTERFACE STATIONARY FOR A TIME SUFFICIENT FOR APPRECIABLE DIFFUSION OF SAID IMPURITY TO OCCUR FROM THE MOLTEN MASS INTO THE SOLID BODY, SUBSEQUENTLY SOLIDIFYING AT LEAST PART OF THE MOLTEN MASS SO THAT THE SOLIDIFIED MATERIAL AND THE ORIGINAL SOLID BODY FORM AN INTEGRAL RESULTANT SOLID BODY, AND EVAPORATING SAID IMPURITY SUBSTANTIALLY COMPLETELY FROM THE MOLTEN MASS AFTER THE DIFFUSION AND BEFORE THE COMPLETION OF THE SOLIDIFICATION.

References Cited (Backward Citations)

US2730470A Cited
US2798989A Cited
US2762730A Cited
GB751408A Cited
US2815303A Cited
FR1113385A Cited
US2899343A Cited
US2892739A Cited
US2822308A Cited
US2894863A Cited
US2879189A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1964-02-28 1964-08-29 1965-02-28 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1968-02-28 1968-08-29 1969-02-28 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1972-02-28 1972-08-29 1973-02-28 $7700.00 Window Closed / Lapsed

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