US2859141A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for making a semiconductor junction
Assignee: Raytheon Co
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Filing: 1954-04-30
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Granted: 1958-11-04
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Expires: 1974-04-30
Abstract
No abstract record available.
Inventors
- 👤 Sumner P Wolsky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 00:01
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/04; H; H10; H10P; H10P95/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
61 words
A METHOD FOR MAKING A SEMICONDUCTOR DEVICE COMPRISING THE STEPS OF APPLYING A SMALL QUANTITY OF INDIUM TO ONE SIDE OF A BODY OF GERMANIUM AND HEATING TO A TEMPERATURE IN EXCESS OF THE MELTING POINT OF THE INDIUM AND BELOW THE MELTING POINT OF THE GERMANIUM BODY AND COOLING THROUGH THE RANGE OF RECRYSTALLIZATION TEMPERATURES IN LESS THAN THIRTY SECONDS.
Claim 2
Independent Claim
61 words
A METHOD FOR MAKING A SEMICONDUCTOR DEVICE COMPRISING THE STEPS OF APPLYING A SMALL QUANTITY OF INDIUM TO ONE SIDE OF A BODY OF GERMANIUM AND HEATING TO A TEMPERATURE IN EXCESS OF THE MELTING POINT OF THE INDIUM AND BELOW THE MELTING POINT OF THE GERMANIUM BODY AND COOLING THROUGH THE RANGE OF RECRYSTALLIZATION TEMPERATURES IN LESS THAN THIRTY SECONDS.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1961-11-03 | 1962-05-05 | 1962-11-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1965-11-03 | 1966-05-05 | 1966-11-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1969-11-03 | 1970-05-05 | 1970-11-04 | $7700.00 | Window Closed / Lapsed |