US20030198872A1 — Method for setting mask pattern and illumination …

Claim 1

Independent Claim 100 words

1 . A method for setting a mask pattern and an illumination condition suitable for an exposure method for using plural kinds of light to illuminate a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said setting method comprising the steps of: forming data for the predetermined pattern; forming data for the auxiliary pattern; and setting the illumination condition for defining an effective light source of illumination using the plural kinds of light.

Claim 2

Dependent Claim 100 words

1 . A method for setting a mask pattern and an illumination condition suitable for an exposure method for using plural kinds of light to illuminate a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said setting method comprising the steps of: forming data for the predetermined pattern; forming data for the auxiliary pattern; and setting the illumination condition for defining an effective light source of illumination using the plural kinds of light.

Claim 3

Dependent Claim 23 words

2 . A method according to claim 1 , further comprising the step of determining whether or not the predetermined pattern is exposable.

Claim 4

Dependent Claim 32 words

3 . A method according to claim 1 , wherein the plural kinds of light include light for resolving the predetermined pattern, and light for preventing the auxiliary pattern from being resolved.

Claim 5

Dependent Claim 32 words

4 . A method according to claim 2 , further comprising the step of correcting data for the predetermined pattern when said determining step determines that the predetermined pattern is not exposable.

Claim 6

Dependent Claim 60 words

5 . A method according to claim 2 , further comprising the steps of: determining whether data of the mask pattern meets a predetermined design rule; and correcting the auxiliary pattern so that the data of the mask pattern may meet the predetermined design rule when said determining step determines that the data does not meet the predetermined design rule.

Claim 7

Dependent Claim 56 words

6 . A method according to claim 2 , further comprising the steps of: determining whether the illumination condition meets a predetermined design rule; and correcting the illumination condition so that the illumination condition may meet the predetermined design rule when said determining step determines that the illumination condition does not meet the predetermined design rule.

Claim 8

Dependent Claim 43 words

7 . A method according to claim 1 , further comprising the steps of: dividing the predetermined pattern into a plurality of areas to apply said steps for each area; and forming the mask pattern based on results obtained from the respective areas.

Claim 9

Dependent Claim 30 words

8 . A method according to claim 1 , wherein said setting step selects one kind of optical member for an illumination system from among plural kinds of optical members.

Claim 10

Dependent Claim 17 words

9 . A method according to claim 8 , wherein the optical member includes an aperture step.

Claim 11

Dependent Claim 23 words

10 . A method according to claim 1 , wherein said setting step changes an aperture shape and size of an aperture step.

Claim 12

Dependent Claim 101 words

11 . A method for setting a mask pattern and an illumination condition suitable for an exposure method for using plural kinds of light to illuminate a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said setting method comprising the steps of: obtaining a minimum pitch of the mask pattern; and obtaining the illumination condition for defining an effective light source of illumination using the plural kinds of light based on the minimum pitch.

Claim 13

Dependent Claim 101 words

11 . A method for setting a mask pattern and an illumination condition suitable for an exposure method for using plural kinds of light to illuminate a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said setting method comprising the steps of: obtaining a minimum pitch of the mask pattern; and obtaining the illumination condition for defining an effective light source of illumination using the plural kinds of light based on the minimum pitch.

Claim 14

Dependent Claim 32 words

12 . A method according to claim 11 , wherein the plural kinds of light include light for resolving the predetermined pattern, and light for preventing the auxiliary pattern from being resolved.

Claim 15

Dependent Claim 54 words

13 . A method according to claim 11 , wherein said step of obtaining, before using the minimum pitch, the illumination condition converts the minimum pitch into k 1 expressed by k 1 =R·NA/λ, where R is the resolution, NA is a numerical aperture, and λ is a wavelength of an exposure light source.

Claim 16

Dependent Claim 35 words

14 . A method according to claim 11 , wherein said step of obtaining the illumination condition obtains the illumination condition by referring to a database that correlates the minimum pitch with the illumination condition.

Claim 17

Dependent Claim 60 words

15 . A method according to claim 11 , further comprising the steps of: determining whether the predetermined pattern is exposable; and changing a kind of the mask when said determining step determines that the predetermined pattern is not exposable, wherein said step of obtaining the illumination condition also considers the kind of the mask in obtaining the illumination condition.

Claim 18

Dependent Claim 63 words

16 . A method according to claim 11 , further comprising the steps of: determining whether the predetermined pattern is exposable; and changing photoresist to be applied onto the target when said determining step determines that the predetermined pattern is not exposable, wherein said step of obtaining the illumination condition also considers the photoresist that has been changed, in obtaining the illumination condition.

Claim 19

Dependent Claim 61 words

17 . A method according to claim 11 , further comprising the steps of: determining whether the predetermined pattern is exposable; and changing a coherence factor of the effective light source when said determining step determines that the predetermined pattern is not exposable, wherein said step of obtaining the illumination condition also considers the coherence factor in obtaining the illumination condition.

Claim 20

Dependent Claim 44 words

18 . A method according to claim 11 , further comprising the steps of: determining whether the predetermined pattern is exposable; and partially changing a size and/or shape of the predetermined pattern when said determining step determines that the predetermined pattern is not exposable.

Claim 21

Dependent Claim 38 words

19 . A method according to claim 11 , further comprising the steps of: determining whether the predetermined pattern is exposable; and changing the auxiliary pattern when said determining step determines that the predetermined pattern is not exposable.

Claim 22

Dependent Claim 51 words

20 . A method according to claim 11 , wherein the predetermined pattern includes a first pattern and a second pattern having a smaller minimum pitch than the first pattern, and said step of obtaining the illumination condition obtains the illumination condition based on the minimum pitch of the second pattern.

Claim 23

Dependent Claim 26 words

21 . A method according to claim 11 , wherein said step of obtaining the minimum pitch obtains the minimum pitch based on the predetermined pattern.

Claim 24

Dependent Claim 105 words

22 . A program for executing a method for setting a mask pattern and an illumination condition suitable for an exposure method for using plural kinds of light to illuminate a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said setting method comprising the steps of obtaining a minimum pitch of the mask pattern, and obtaining the illumination condition for defining an effective light source of illumination using the plural kinds of light based on the minimum pitch.

Claim 25

Dependent Claim 105 words

22 . A program for executing a method for setting a mask pattern and an illumination condition suitable for an exposure method for using plural kinds of light to illuminate a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said setting method comprising the steps of obtaining a minimum pitch of the mask pattern, and obtaining the illumination condition for defining an effective light source of illumination using the plural kinds of light based on the minimum pitch.

Claim 26

Dependent Claim 99 words

23 . A database used for a method for setting a mask pattern and an illumination condition suitable for an exposure method for using plural kinds of light to illuminate a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said database indicating the illumination condition for defining an effective light source of illumination using the plural kinds of light in response to an input of a minimum pitch of the mask pattern.

Claim 27

Dependent Claim 99 words

23 . A database used for a method for setting a mask pattern and an illumination condition suitable for an exposure method for using plural kinds of light to illuminate a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said database indicating the illumination condition for defining an effective light source of illumination using the plural kinds of light in response to an input of a minimum pitch of the mask pattern.

Claim 28

Dependent Claim 32 words

24 . A database according to claim 23 , wherein the plural kinds of light include light for resolving the predetermined pattern, and light for preventing the auxiliary pattern from being resolved.

Claim 29

Dependent Claim 96 words

25 . A method for manufacturing a mask suitable for an exposure method that uses a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said manufacturing method comprising the steps of: setting a size of the predetermined pattern; and adjusting the size of the predetermined pattern in accordance with a characteristic of a photoresist to be applied to the target.

Claim 30

Dependent Claim 96 words

25 . A method for manufacturing a mask suitable for an exposure method that uses a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said manufacturing method comprising the steps of: setting a size of the predetermined pattern; and adjusting the size of the predetermined pattern in accordance with a characteristic of a photoresist to be applied to the target.

Claim 31

Dependent Claim 43 words

26 . A method according to claim 25 , wherein the characteristic of the photoresist includes a contrast of the photoresist, and said adjusting step adjusts a bias to the predetermined pattern within a range from about 0.85 times to about 1.15 times.

Claim 32

Dependent Claim 44 words

27 . A method according to claim 25 , wherein the characteristic of the photoresist includes a photosensitive threshold of the photoresist, and said adjusting step adjusts a bias to the predetermined pattern within a range from about 0.85 times to about 1.15 times.

Claim 33

Dependent Claim 36 words

28 . A method according to claim 25 , wherein said adjusting step adjusts by referring to a database that defines a relationship between the characteristic of the photoresist and the size of the predetermined pattern.

Claim 34

Dependent Claim 100 words

29 . A program for executing a method for manufacturing a mask suitable for an exposure method that uses a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said manufacturing method comprising the steps of setting a size of the predetermined pattern, and adjusting the size of the predetermined pattern in accordance with a characteristic of a photoresist to be applied to the target.

Claim 35

Dependent Claim 100 words

29 . A program for executing a method for manufacturing a mask suitable for an exposure method that uses a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said manufacturing method comprising the steps of setting a size of the predetermined pattern, and adjusting the size of the predetermined pattern in accordance with a characteristic of a photoresist to be applied to the target.

Claim 36

Dependent Claim 91 words

30 . A database used for a method for setting a mask pattern suitable for an exposure method that uses a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said database indicating a bias to the predetermined pattern in response to an input of a characteristic of a photoresist to be applied to the target.

Claim 37

Dependent Claim 91 words

30 . A database used for a method for setting a mask pattern suitable for an exposure method that uses a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said database indicating a bias to the predetermined pattern in response to an input of a characteristic of a photoresist to be applied to the target.

Claim 38

Dependent Claim 120 words

31 . A method for manufacturing a mask suitable for an exposure method that uses a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said manufacturing method comprising the steps of: setting a size of the predetermined pattern; and determining a minimum pitch of the predetermined pattern, utilizing a relationship between a minimum pitch of the predetermined pattern and at least one of a mask error enhancement factor and a critical dimension error, whereby said at least one may fall within a permissible range.

Claim 39

Dependent Claim 120 words

31 . A method for manufacturing a mask suitable for an exposure method that uses a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said manufacturing method comprising the steps of: setting a size of the predetermined pattern; and determining a minimum pitch of the predetermined pattern, utilizing a relationship between a minimum pitch of the predetermined pattern and at least one of a mask error enhancement factor and a critical dimension error, whereby said at least one may fall within a permissible range.

Claim 40

Dependent Claim 105 words

32 . A database used for a method for setting a mask pattern suitable for an exposure method that uses a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said database indicating a minimum pitch of a mask pattern in response to an input of a permissible range for at least one of a mask error enhancement factor and a critical dimension, and a size of the predetermined pattern.

Claim 41

Dependent Claim 105 words

32 . A database used for a method for setting a mask pattern suitable for an exposure method that uses a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said database indicating a minimum pitch of a mask pattern in response to an input of a permissible range for at least one of a mask error enhancement factor and a critical dimension, and a size of the predetermined pattern.

Claim 42

Dependent Claim 114 words

33 . A method for manufacturing a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, said method comprising the steps of: setting a size of the predetermined pattern; setting a size of the auxiliary pattern; and adjusting the size of the auxiliary pattern, utilizing a relationship between the size of the auxiliary pattern and at least one of a mask error enhancement factor, a critical dimension error, a depth of focus, a location error of the auxiliary pattern, a size error of the auxiliary pattern, and an exposure dose for the size of the predetermined pattern, whereby said at least one may fall within a permissible range.

Claim 43

Dependent Claim 114 words

33 . A method for manufacturing a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, said method comprising the steps of: setting a size of the predetermined pattern; setting a size of the auxiliary pattern; and adjusting the size of the auxiliary pattern, utilizing a relationship between the size of the auxiliary pattern and at least one of a mask error enhancement factor, a critical dimension error, a depth of focus, a location error of the auxiliary pattern, a size error of the auxiliary pattern, and an exposure dose for the size of the predetermined pattern, whereby said at least one may fall within a permissible range.

Claim 44

Dependent Claim 153 words

34 . A method for manufacturing a mask suitable for an exposure method that uses the mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said manufacturing method comprising the steps of: setting a size of the predetermined pattern; setting a size of the auxiliary pattern; and adjusting the size of the auxiliary pattern, utilizing a relationship between the size of the auxiliary pattern and at least one of a mask error enhancement factor, a critical dimension error, a depth of focus, a location error of the auxiliary pattern, a size error of the auxiliary pattern, and an exposure dose for the size of the predetermined pattern, whereby said at least one may fall within a permissible range.

Claim 45

Dependent Claim 153 words

34 . A method for manufacturing a mask suitable for an exposure method that uses the mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said manufacturing method comprising the steps of: setting a size of the predetermined pattern; setting a size of the auxiliary pattern; and adjusting the size of the auxiliary pattern, utilizing a relationship between the size of the auxiliary pattern and at least one of a mask error enhancement factor, a critical dimension error, a depth of focus, a location error of the auxiliary pattern, a size error of the auxiliary pattern, and an exposure dose for the size of the predetermined pattern, whereby said at least one may fall within a permissible range.

Claim 46

Dependent Claim 32 words

35 . A method according to claim 34 , wherein said adjusting step changes the size of the auxiliary pattern within a range of ±10% of the size of the auxiliary pattern.

Claim 47

Dependent Claim 37 words

36 . A method according to claim 34 , wherein said adjusting step makes smaller the size of the auxiliary pattern so as to improve the mask error enhancement factor, the location error or the size error.

Claim 48

Dependent Claim 37 words

37 . A method according to claim 34 , wherein said adjusting step makes larger the size of the auxiliary pattern so as to improve the critical dimension error, the depth of focus or the exposure dose.

Claim 49

Dependent Claim 126 words

38 . A database used for a method for setting a mask pattern suitable for an exposure method that uses a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said database indicating a size of the auxiliary pattern in response to an input of a size of the predetermined pattern and a permissible range for at least one of a mask error enhancement factor, a critical dimension error, a depth of focus, a location error of the auxiliary pattern, a size error of the auxiliary pattern, and an exposure dose.

Claim 50

Dependent Claim 126 words

38 . A database used for a method for setting a mask pattern suitable for an exposure method that uses a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said database indicating a size of the auxiliary pattern in response to an input of a size of the predetermined pattern and a permissible range for at least one of a mask error enhancement factor, a critical dimension error, a depth of focus, a location error of the auxiliary pattern, a size error of the auxiliary pattern, and an exposure dose.

Claim 51

Dependent Claim 82 words

39 . An exposure method that uses a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said method comprising the step of adjusting a coherence factor of an illumination system for illuminating the mask so that a depth of focus may fall within a permissible range.

Claim 52

Dependent Claim 82 words

39 . An exposure method that uses a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said method comprising the step of adjusting a coherence factor of an illumination system for illuminating the mask so that a depth of focus may fall within a permissible range.

Claim 53

Dependent Claim 70 words

40 . An exposure method that uses a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said method comprising the step of exposing while moving the target in an optical axis direction plural times.

Claim 54

Dependent Claim 70 words

40 . An exposure method that uses a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said method comprising the step of exposing while moving the target in an optical axis direction plural times.

Claim 55

Dependent Claim 27 words

41 . A method according to claim 40 , wherein the auxiliary pattern includes a pattern adjacent to the predetermined pattern and smaller than another auxiliary pattern.

Claim 56

Dependent Claim 111 words

42 . A method for manufacturing a mask suitable for an exposure method that uses a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said manufacturing method comprising the steps of: setting to be longer a size of the predetermined pattern in a first direction than in a second direction orthogonal to the first direction; and setting to be longer a size of the auxiliary pattern in the first direction than in the second direction.

Claim 57

Dependent Claim 111 words

42 . A method for manufacturing a mask suitable for an exposure method that uses a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said manufacturing method comprising the steps of: setting to be longer a size of the predetermined pattern in a first direction than in a second direction orthogonal to the first direction; and setting to be longer a size of the auxiliary pattern in the first direction than in the second direction.

Claim 58

Dependent Claim 25 words

43 . A method according to claim 42 , wherein the predetermined pattern has a rectangular shape, while the auxiliary pattern has a rectangular shape.

Claim 59

Dependent Claim 61 words

44 . A method for manufacturing a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, said method comprising the step of arranging, when there are plural kinds of predetermined patterns of different shapes, plural kinds of the auxiliary pattern of different shapes each corresponding to each of the plural kinds of the predetermined patterns.

Claim 60

Dependent Claim 61 words

44 . A method for manufacturing a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, said method comprising the step of arranging, when there are plural kinds of predetermined patterns of different shapes, plural kinds of the auxiliary pattern of different shapes each corresponding to each of the plural kinds of the predetermined patterns.

Claim 61

Dependent Claim 89 words

45 . A method for manufacturing a mask suitable for an exposure method that uses the mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on target via a projection optical system, said manufacturing method comprising the step of arranging two or more kinds of the auxiliary pattern of different shapes, when there are plural kinds of predetermined patterns of different shapes.

Claim 62

Dependent Claim 89 words

45 . A method for manufacturing a mask suitable for an exposure method that uses the mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on target via a projection optical system, said manufacturing method comprising the step of arranging two or more kinds of the auxiliary pattern of different shapes, when there are plural kinds of predetermined patterns of different shapes.

Claim 63

Dependent Claim 98 words

46 . A method for manufacturing a mask suitable for an exposure method that uses the mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said manufacturing method comprising the steps of: forming the predetermined pattern in first and second areas spaced by a non-interfering distance; and setting the auxiliary pattern as a different pattern for each of the first and second areas.

Claim 64

Dependent Claim 98 words

46 . A method for manufacturing a mask suitable for an exposure method that uses the mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said manufacturing method comprising the steps of: forming the predetermined pattern in first and second areas spaced by a non-interfering distance; and setting the auxiliary pattern as a different pattern for each of the first and second areas.

Claim 65

Dependent Claim 47 words

47 . A method according to claim 46 , wherein the non-interfering distance is 2 or greater when converted into k 1 expressed by k 1 =R·NA/λ, where R is the resolution, NA is a numerical aperture, and λ is a wavelength of an exposure light source.

Claim 66

Dependent Claim 44 words

48 . A method according to claim 46 , wherein a minimum pitch in the first area is smaller than that in the second area, and said step of forming the predetermined pattern increases a size of the predetermined pattern in the second area.

Claim 67

Dependent Claim 157 words

49 . An exposure method for illuminating a mask manufactured by a method for manufacturing a mask, said exposure method using the mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminating the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said manufacturing method comprising the steps of forming the predetermined pattern in first and second areas spaced by a non-interfering distance, and setting the auxiliary pattern as a different pattern for each of the first and second areas, wherein a minimum pitch in the first area is smaller than that in the second area, and the step of forming the predetermined pattern corrects a size of the predetermined pattern in the second area, said exposure method using an illumination system determined in accordance with the minimum pitch in the first area.

Claim 68

Dependent Claim 157 words

49 . An exposure method for illuminating a mask manufactured by a method for manufacturing a mask, said exposure method using the mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminating the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said manufacturing method comprising the steps of forming the predetermined pattern in first and second areas spaced by a non-interfering distance, and setting the auxiliary pattern as a different pattern for each of the first and second areas, wherein a minimum pitch in the first area is smaller than that in the second area, and the step of forming the predetermined pattern corrects a size of the predetermined pattern in the second area, said exposure method using an illumination system determined in accordance with the minimum pitch in the first area.

Claim 69

Dependent Claim 25 words

50 . A method according to claim 46 , wherein said step of forming the predetermined pattern corrects the predetermined pattern in the first area.

Claim 70

Dependent Claim 153 words

51 . An exposure method for illuminating a mask manufactured by a method for manufacturing a mask, said exposure method using the mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminating the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said manufacturing method comprising the steps of forming the predetermined pattern in first and second areas which are spaced by a non-interference distance, and setting differently the auxiliary pattern for each of the first and second areas, wherein a minimum pitch in the first area is smaller than that in the second area, and said step of forming the predetermined pattern corrects the predetermined pattern in the first area, said exposure method using an illumination system determined in accordance with the minimum pitch in the second area.

Claim 71

Dependent Claim 153 words

51 . An exposure method for illuminating a mask manufactured by a method for manufacturing a mask, said exposure method using the mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminating the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said manufacturing method comprising the steps of forming the predetermined pattern in first and second areas which are spaced by a non-interference distance, and setting differently the auxiliary pattern for each of the first and second areas, wherein a minimum pitch in the first area is smaller than that in the second area, and said step of forming the predetermined pattern corrects the predetermined pattern in the first area, said exposure method using an illumination system determined in accordance with the minimum pitch in the second area.

Claim 72

Dependent Claim 82 words

52 . A database used for a method for setting a mask pattern suitable for an exposure method that uses the mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said database indicating a relationship between a kind of mask and a contrast or critical dimension error.

Claim 73

Dependent Claim 82 words

52 . A database used for a method for setting a mask pattern suitable for an exposure method that uses the mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said database indicating a relationship between a kind of mask and a contrast or critical dimension error.

Claim 74

Dependent Claim 111 words

53 . A method for manufacturing a mask suitable for an exposure method that uses the mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said manufacturing method comprising the step of arranging, when two auxiliary patterns to be inserted overlap each other or become adjacent to each other, one auxiliary pattern with a center of gravity that accords with a center of gravity of the two auxiliary patterns instead of inserting the two auxiliary patterns.

Claim 75

Dependent Claim 111 words

53 . A method for manufacturing a mask suitable for an exposure method that uses the mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said manufacturing method comprising the step of arranging, when two auxiliary patterns to be inserted overlap each other or become adjacent to each other, one auxiliary pattern with a center of gravity that accords with a center of gravity of the two auxiliary patterns instead of inserting the two auxiliary patterns.

Claim 76

Dependent Claim 144 words

54 . A method for manufacturing a mask suitable for an exposure method that uses the mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said manufacturing method comprising the step of arranging, when an interval between two minimum vertexes of two auxiliary patterns to be inserted is 0.20 or smaller when converted into k 1 expressed by k 1 =R·NA/λ, where R is the resolution, NA is a numerical aperture, and λ is a wavelength of an exposure light source, one auxiliary pattern that has a center of gravity that accords with a center of gravity of the two auxiliary patterns instead of inserting the two auxiliary patterns.

Claim 77

Dependent Claim 144 words

54 . A method for manufacturing a mask suitable for an exposure method that uses the mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said manufacturing method comprising the step of arranging, when an interval between two minimum vertexes of two auxiliary patterns to be inserted is 0.20 or smaller when converted into k 1 expressed by k 1 =R·NA/λ, where R is the resolution, NA is a numerical aperture, and λ is a wavelength of an exposure light source, one auxiliary pattern that has a center of gravity that accords with a center of gravity of the two auxiliary patterns instead of inserting the two auxiliary patterns.

Claim 78

Dependent Claim 146 words

55 . A method for manufacturing a mask suitable for an exposure method that uses the mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said manufacturing method comprising the steps of: classifying the predetermined pattern into one of a periodic pattern having at least two contact holes arranged in at least one direction among two orthogonal directions, and an isolated pattern that includes no other contact hole arranged in any of the two orthogonal directions; arranging, for the periodic pattern, the auxiliary pattern with an interval as a period between the at least of two contact holes; and arranging the auxiliary pattern with an arbitrary period for the isolated pattern.

Claim 79

Dependent Claim 146 words

55 . A method for manufacturing a mask suitable for an exposure method that uses the mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, said manufacturing method comprising the steps of: classifying the predetermined pattern into one of a periodic pattern having at least two contact holes arranged in at least one direction among two orthogonal directions, and an isolated pattern that includes no other contact hole arranged in any of the two orthogonal directions; arranging, for the periodic pattern, the auxiliary pattern with an interval as a period between the at least of two contact holes; and arranging the auxiliary pattern with an arbitrary period for the isolated pattern.

Claim 80

Dependent Claim 64 words

56 . A method according to claim 55 , wherein said step of arranging the auxiliary pattern for the periodic pattern includes the steps of: determining a size of the auxiliary pattern based on a minimum pitch of the predetermined pattern; and determining a period of the auxiliary pattern based on a hole diameter of the predetermined pattern and the period as the interval.

Claim 81

Dependent Claim 141 words

57 . A method according to claim 56 , wherein said step of determining the size of the auxiliary pattern includes: the first step of determining whether the minimum pitch of the predetermined pattern is 0.25×{square root}2 or smaller when converted into k 1 expressed by k 1 =R·NA/λ, where R is the resolution, NA is a numerical aperture, and λ is a wavelength of an exposure light source; the step of setting the size of the auxiliary pattern to a predetermined ratio of the predetermined pattern, when said first step determines that the minimum pitch is 0.25×{square root}2 or smaller; and the step of setting the size of the auxiliary pattern to a size corresponding to 0.25 or smaller when converted into k 1 , when said first step determines that the minimum pitch is not 0.25×{square root}2 or smaller.

Claim 82

Dependent Claim 18 words

58 . A method according to claim 57 , wherein the predetermined ratio is between 70% and 85%.

Claim 83

Dependent Claim 64 words

59 . A method according to claim 56 , wherein said step of determining the period of the auxiliary pattern includes: the first step of determining whether a hole diameter of the predetermined pattern is below a first threshold; and the step of terminating said method with an abnormal operation when said first step determines that the hole diameter is below the first threshold.

Claim 84

Dependent Claim 19 words

60 . A method according to claim 59 , wherein the first threshold is between 0.25 and 0.25×{square root}2.

Claim 85

Dependent Claim 146 words

61 . A method according to claim 59 , further comprising: the second step of determining, when said first step determines that the hole diameter is not below the first threshold, whether the hole diameter of the predetermined pattern is between the first threshold and a second threshold; the third step of determining whether the period of the periodic pattern is a third threshold or greater when converted into k 1 expressed by k 1 =R·NA/λ, where R is the resolution, NA is a numerical aperture, and λ is a wavelength of an exposure light source, where said second step determines that the hole diameter is between the first and second thresholds; and the step of arranging the auxiliary pattern with the period of the periodic pattern when said third step determines that the period of the periodic pattern is not the third threshold or greater.

Claim 86

Dependent Claim 53 words

62 . A method according to claim 61 , further comprising the step of arranging the auxiliary pattern with a first value obtained by dividing the period of the periodic pattern by a second value when said third step determines that the period of the periodic pattern is the third threshold or greater.

Claim 87

Dependent Claim 38 words

63 . A method according to claim 61 , wherein the first threshold is between 0.25 and 0.25×{square root}2, the second threshold is between 0.25×{square root}2 and 0.5, and the third threshold is between 1.0 and {square root}2.

Claim 88

Dependent Claim 138 words

64 . A method according to claim 61 , further comprising: the fourth step of determining whether the period of the periodic pattern is a fourth threshold or greater when converted into k 1 , where said second step determines that the period of the periodic pattern is not between the first threshold and the second threshold; and the fifth step of determining whether a third value obtained by subtracting the hole diameter of the predetermined pattern from a fourth value of the period of the periodic pattern converted into k 1 is a fifth threshold or smaller, when said fourth step determines that the period of the periodic pattern is the fourth threshold or greater, the auxiliary pattern being not inserted when said fifth determining step determines that the third value is a fifth threshold or smaller.

Claim 89

Dependent Claim 91 words

65 . A method according to claim 61 , further comprising: the fourth step of determining whether the period of the periodic pattern is a fourth threshold or greater when converted into k 1 , where said second step determines that the period of the periodic pattern is not between the first threshold and the second threshold; and the step of arranging the auxiliary pattern with the period of the periodic pattern, when said fourth step determines that the period of the periodic pattern is not the fourth threshold or greater.

Claim 90

Dependent Claim 38 words

66 . A method according to claim 61 , wherein the first threshold is between 0.25 and 0.25×{square root}2, the second threshold is between 0.25×{square root}2 and 0.5, and the fourth threshold is between 1.0 and {square root}2.

Claim 91

Dependent Claim 94 words

67 . A method according to claim 55 , wherein said step of arranging the auxiliary pattern for the isolated pattern includes the steps of: determining whether the periodic pattern exists within a predetermined range from the isolated pattern; arranging the auxiliary pattern in accordance with the period of the periodic pattern when said determining step determines that the periodic pattern exists; and arranging the auxiliary pattern using a size of the isolated pattern for a half pitch of the auxiliary pattern when said determining step determines that the periodic pattern does not exist.

Claim 92

Dependent Claim 103 words

68 . A method according to claim 55 , wherein the periodic pattern includes a first periodic pattern having periodicity in a first direction, and a second periodic pattern having periodicity in a second direction parallel to the first direction, said method further comprising the step of arranging the auxiliary pattern between the first and second periodic patterns with a period as an interval between the first and second periodic patterns in a third direction perpendicular to the first and second directions, when there is no other contact holes in the third direction for contact holes forming the first and second periodic patterns.

Claim 93

Dependent Claim 90 words

69 . A method according to claim 55 , wherein there is no other contact holes in a second direction perpendicular to a first direction for contact holes included in the periodic pattern that has periodicity in the first direction, said method further comprising the step of arranging the auxiliary pattern between the periodic pattern and the isolated pattern with a period as an interval in the second direction between the first direction and a third direction that passes through the isolated pattern and is parallel to the first direction.

Claim 94

Dependent Claim 117 words

70 . A method for manufacturing a mask suitable for an exposure method that uses a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, part of the predetermined pattern being arranged on lattice points within a predetermined area, another part of the predetermined patterns offsetting within a range of 20% of the pitch of the lattice points, and said manufacturing method comprising the step of inserting the auxiliary pattern by considering that the offsetting patterns are arranged on the lattice points.

Claim 95

Dependent Claim 117 words

70 . A method for manufacturing a mask suitable for an exposure method that uses a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, and illuminates the mask using plural kinds of light so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system, part of the predetermined pattern being arranged on lattice points within a predetermined area, another part of the predetermined patterns offsetting within a range of 20% of the pitch of the lattice points, and said manufacturing method comprising the step of inserting the auxiliary pattern by considering that the offsetting patterns are arranged on the lattice points.

Claim 96

Dependent Claim 55 words

71 . A mask comprising: a first predetermined pattern; a first auxiliary pattern arranged near, smaller than, and shaped similar to said first predetermined pattern; a second predetermined pattern having a different shape from said first predetermined pattern; and a second auxiliary pattern arranged near, smaller than, and shaped similar to said second predetermined pattern.

Claim 97

Dependent Claim 55 words

71 . A mask comprising: a first predetermined pattern; a first auxiliary pattern arranged near, smaller than, and shaped similar to said first predetermined pattern; a second predetermined pattern having a different shape from said first predetermined pattern; and a second auxiliary pattern arranged near, smaller than, and shaped similar to said second predetermined pattern.

Claim 98

Dependent Claim 47 words

72 . A mask according to claim 71 , wherein a plurality of said first auxiliary pattern is arranged with a first period around said first predetermined pattern, and a plurality of said second auxiliary pattern is arranged with a second period around said second predetermined pattern.

Claim 99

Dependent Claim 20 words

73 . A mask according to claim 71 , wherein said first and second predetermined patterns are contact hole patterns.

Claim 100

Dependent Claim 77 words

74 . A device fabricating method comprising the steps of: exposing a target using a mask that includes a first predetermined pattern, a first auxiliary pattern arranged near, smaller than, and similarly shaped to said first predetermined pattern, a second predetermined pattern having a different shape from said first predetermined pattern, and a second auxiliary pattern arranged near, smaller than, and shaped similar to said second predetermined pattern; and conducting a predetermined process for the exposed target.

Claim 101

Dependent Claim 77 words

74 . A device fabricating method comprising the steps of: exposing a target using a mask that includes a first predetermined pattern, a first auxiliary pattern arranged near, smaller than, and similarly shaped to said first predetermined pattern, a second predetermined pattern having a different shape from said first predetermined pattern, and a second auxiliary pattern arranged near, smaller than, and shaped similar to said second predetermined pattern; and conducting a predetermined process for the exposed target.

Method for setting mask pattern and illumination condition

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