Patent US20030193061A1 successfully refreshed from Google Patents.
US20030193061A1
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Electronic component and method for producing an electronic component
Assignee: IMP GmbH
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Filing: 2001-07-31
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Granted: —
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Expires: 2021-07-31
Abstract
Abstract The invention concerns an electronic component with a first layer ( 16 ) of metallically conductive material, a second layer ( 12 ) of semiconductor material and a third layer ( 14 ) between the first ( 16 ) and second ( 12 ) layers, wherein the third layer ( 14 ) includes a dielectric and is adapted to inhibit or prevent charge carrier transport both from the first to the second layer and also from the second to the first layer. According to the invention the dielectric contains praseodymium oxide in predominantly single crystal phase. Berlin 25 Jul. 2001 Our ref: IB1063 JVO/bfr Applicants/proprietors: IHP GmbH-Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik Office ref: New application
Inventors
- 👤 Hans-Joerg Osten
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:07
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01342; H10D64/60; H10D64/66; H10D64/68; H10D64/689; H10D64/691
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
94 words
1 . An electronic component with a first layer ( 16 ) of metallically conductive material, a second layer ( 12 ) of semiconductor material and a third layer ( 14 ) between the first ( 16 ) and second ( 12 ) layers, wherein the third layer ( 14 ) includes a dielectric and is adapted to inhibit or prevent charge carrier transport both from the first to the second layer and also from the second to the first layer, characterised in that the dielectric contains praseodymium oxide in predominantly single crystal phase.
Claim 2
Dependent Claim
94 words
1 . An electronic component with a first layer ( 16 ) of metallically conductive material, a second layer ( 12 ) of semiconductor material and a third layer ( 14 ) between the first ( 16 ) and second ( 12 ) layers, wherein the third layer ( 14 ) includes a dielectric and is adapted to inhibit or prevent charge carrier transport both from the first to the second layer and also from the second to the first layer, characterised in that the dielectric contains praseodymium oxide in predominantly single crystal phase.
Claim 3
Dependent Claim
30 words
2 . An electronic component as set forth in claim 1 characterised in that the third layer ( 14 ) has a single crystal region ( 14 . 2 ).
Claim 4
Dependent Claim
29 words
3 . An electronic component as set forth in one of the preceding claims characterised in that the third layer has an amorphous region ( 14 . 1 ).
Claim 5
Dependent Claim
55 words
4 . An electronic component as set forth in one of the preceding claims characterised in that the extent of the amorphous region ( 14 . 1 ) in the direction of the sequence of layers is at a maximum 20% of the total extent of the third layer ( 14 ) in said direction.
Claim 6
Dependent Claim
40 words
5 . An electronic component as set forth in one of the preceding claims characterised in that the extent of the third layer ( 14 ) in the direction of the sequence of layers is at a maximum 50 nanometers.
Claim 7
Dependent Claim
22 words
6 . An electronic component as set forth in one of the preceding claims characterised in that the dielectric comprises praseodymium oxide.
Claim 8
Dependent Claim
28 words
7 . An electronic component as set forth in one of the preceding claims characterised in that the dielectric constant of the dielectric is between 20 and 40.
Claim 9
Dependent Claim
27 words
8 . An electronic component as set forth in one of the preceding claims characterised in that the dielectric contains praseodymium oxide Pr 2 O 3 .
Claim 10
Dependent Claim
35 words
9 . An electronic component as set forth in one of the preceding claims characterised in that the dielectric contains Pr 2 O 3 in a D5 3 -crystal structure or D5 2 -crystal structure.
Claim 11
Dependent Claim
31 words
10 . An electronic component as set forth in one of the preceding claims characterised in that the component is in the form of a field effect transistor ( 10 ).
Claim 12
Dependent Claim
86 words
11 . An electronic component as set forth in one of the preceding claims characterised in that the component is in the form of a scaled CMOS-FET, wherein the first layer is in the form of a gate electrode ( 16 ) and the third layer ( 14 ) adjoins a channel ( 22 ) provided in the second layer ( 12 ) in a direction perpendicular to the sequence of layers between a source structure ( 18 ) and a drain structure ( 22 ).
Claim 13
Dependent Claim
43 words
12 . An electronic component as set forth in one of the preceding claims characterised in that at its interface to the third layer ( 14 ) the second layer ( 12 ) comprises silicon with a (001)- or with a (111)-crystal orientation.
Claim 14
Dependent Claim
49 words
13 . A process for the production of an electronic component comprising a step of depositing a praseodymium oxide-bearing material layer from a gaseous atmosphere on a substrate characterised in that the praseodymium oxide-bearing material layer is deposited at a substrate temperature of between 500° C. and 800° C.
Claim 15
Dependent Claim
49 words
13 . A process for the production of an electronic component comprising a step of depositing a praseodymium oxide-bearing material layer from a gaseous atmosphere on a substrate characterised in that the praseodymium oxide-bearing material layer is deposited at a substrate temperature of between 500° C. and 800° C.
Claim 16
Dependent Claim
30 words
14 . A process as set forth in claim 13 characterised in that the praseodymium-bearing material layer is deposited at a substrate temperature of between 600° C. and 750° C.
Claim 17
Dependent Claim
26 words
15 . A process as set forth in claim 14 characterised in that the praseodymium-bearing material layer is deposited at a substrate temperature of 625° C.
Claim 18
Dependent Claim
35 words
16 . A process as set forth in one of claims 13 through 15 characterised in that the step of depositing a praseodymium-bearing material layer is effected by means of a molecular beam-epitaxial growth process.
Claim 19
Dependent Claim
31 words
17 . A process as set forth in one of claims 13 through 16 characterised in that a solid starting material is vaporised for the deposit of the praseodymium-bearing material layer.
Claim 20
Dependent Claim
21 words
18 . A process as set forth in claim 17 characterised in that praseodymium oxide Pr 6 O 11 is vaporised.
Claim 21
Dependent Claim
38 words
19 . A process as set forth in one of claims 13 through 15 characterised in that a chemical reaction of two or more gaseous starting substances is implemented for the deposit of praseodymium oxide on the substrate.
Claim 22
Dependent Claim
35 words
20 . A process as set forth in claim 19 characterised in that a chemical reaction of two or more metallo-organic gaseous starting substances is implemented for the deposit of praseodymium oxide on the substrate.
Claim 23
Dependent Claim
44 words
21 . A process as set forth in one of the preceding claims characterised by a step of thermal curing, which follows the deposit step, wherein the substrate temperature during the thermal curing step is at least 400° C. and at most 1000° C.
Claim 24
Dependent Claim
33 words
22 . A process as set forth in one of the preceding claims characterised in that the temperature of the layer during the thermal curing step is between 550° C. and 700° C.
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