Formation of insulating film

Abstract

Abstract PURPOSE:To make it possible to form an interlayer insulating film having a flat and smooth surface, by forming a silicon oxide film of a specified thickness on a substrate or performing photochemical vapor phase reaction, and forming a film in the same reaction chamber by a plasma CVD method using a liquid reaction means. CONSTITUTION:As a reacting gas, a silicide gas, e.g., methyl silane (Si(CH3)4, (HzSi(CH3)2), TOES (Si(OC2H5)4) or the like, which is in a liquid state at room temperature or desirably at a temperature of 100 deg.C or less (atmospheric pressure), is used. At first, silicon oxide film 10 is formed on a substrate having irregular shape by an optical CVD method. The surface is uniformly covered along the irregular shape. Thereafter, high frequency power is applied between a mesh electrode 8 on a light transmitting window 5 and a substrate supporting body 2 from a power source 9. At this time, TOES/N2O is used as a reactive gas. Other conditions are made to be the same as in an optical CVD method. A silicon oxide film 11 is formed by a plasma CVD method. Thus, a film is selectively formed in the recess part, and the upper part is made flat.

Inventors

• 👤 Shunpei Yamazaki
• 👤 Kenji Ito

Bibliographic Details