Formation of thin film

Abstract

Abstract PURPOSE:To obtain the sufficient filling property of a thin-film substance into a recess on a surface of a substance by a method wherein after a film of an organic substance is deposited selectively on a surface region except a predetermined surface region of the substance, the substance is arranged in a photochemical reactor where the deposition of the substance for forming a thin film caused by a photochemical reaction of a reactive gas and the decomposition of the organic substance are repeated at predetermined times. CONSTITUTION:A pattern of photoresist is formed on a surface of a silicon single crystal wafer substrate and this substrate 25 is put on a substrate base 23 in a reactor 21 and is heated. Next, a reactive gas is supplied into the reactor 21 and is irradiated with ultraviolet rays to excite a photochemical reaction which results in formation of a thin film on the surface of the substrate 25. For the reactive gas for this reaction, monosilane and oxygen are introduced. Oxygen is supplied into the reactor 21 to make a pressure 0.2torr. If ultraviolet rays are projected at this time, the surface layer of photoresist is decomposed and removed in 2min and the deposited matters on that layer are also removed by lift-off. The gas in the reactor 21 is changed for a thin-film deposition gas and a lift-off gas alternately and a thin film of a desired thickness is deposited selectively, after which the residual photoresist is removed by photolysis.

Inventors

• 👤 Yasuhiro Mochizuki
• 👤 康弘 望月
• 👤 Naohiro Monma
• 👤 直弘 門馬

Bibliographic Details