Manufacture of multi-layer wiring type semiconductor

Abstract

Abstract PURPOSE: For avoiding wire breakage, to fit PSG film on the first layer connected to a diffusion range and the second layer on the wiring exposed by using photo resist film three times. CONSTITUTION: AiO 2 2 is fitted, an opening is provided on an Si substrate 1, an impurity diffusion range 3 is formed, first Al film 4 is fitted on the whole surface of said substrate 1 while connected to said range 3, and said substrate 1 is covered with PSG film 5. Next, first photo-resist film 6a is provided only on the range serving as the first wiring layer of said film 4, and changed into porous Al 2 O 3 film 7 through the anode oxidation of the exposed portion of said film 4 with said film 6a used as mask. Thereafter, second resist film 6b is provided at opening formation range, SiO 2 film 8 is formed over the whole range of said substrate 1, said film 6b is removed together with said film 8, and an opening 9 is formed in said film 6a. Next, a third resist film 6c is provided over the whole surface of said substrate 1, and the portion in said opening 9 of said film 6c is removed by using plasma, with the side faces inclined, for exposing said PSG film 5. Thereafter, said film 5 is removed through etching, an opening 10 is provided, and a second layer Al wiring 11 for contacting with said first wiring 4 is fitted. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Masaru Nakamura

Bibliographic Details