Patent EP1204147A1 successfully refreshed from Google Patents.
EP1204147A1
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Semiconductor element and semiconductor memory device using the same
Assignee: Hitachi Ltd
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Filing: 1994-08-12
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Granted: —
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Expires: 2014-08-12
Abstract
Abstract A semiconductor element, comprising a source region (19), a drain region (20),a channel forming region (21) connecting said source region and said drain region, a gate (22) applying an electric field to said channel forming region, and a carrier confinement region (24) isolated from said channel forming region by a potential barrier between said channel forming region and the carrier confinement region, wherein said carrier confinement region is formed of a conductor or semiconductor grains disposed between said channel forming region and said gate and surrounded by an insulator, wherein the distance between said carrier confinement region and said channel forming region is larger than 3 nm.
Inventors
- 👤 Kazuo Yano
- 👤 Tomoyuki Ishii
- 👤 Takashi Hashimoto
- 👤 Koichi Seki
- 👤 Masakazu Aoki
- 👤 Takeshi Sakata
- 👤 Yoshinobu Nakagome
- 👤 Kan Takeuchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 09:15
CPC Classifications
H; H10; H10B; H10B12/00; B; B82; B82Y; B82Y10/00; G; G11; G11C; G11C11/00; G11C11/21; G11C11/22; G11C11/34; G11C11/40; G11C11/401; G11C11/403; G11C11/404; G11C16/00; G11C16/02; G11C16/04; G11C16/0466; G11C16/06; G11C16/10; G11C16/26; G11C16/28; H10B41/00; H10B41/20; H10B41/40; H10B41/42; H10B41/49; H10B69/00; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0411; H10D30/40; H10D30/402; H10D30/60; H10D30/68; H10D30/688; H10D30/6891; H10D30/6892; H10D64/00; H10D64/01; H10D64/031; H10D64/035; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D88/00; H10D88/01; G11C2216/00; G11C2216/02; G11C2216/06; G11C2216/08; H10D30/62; H10D86/00; H10D86/201
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
111 words
A semiconductor element, comprising a source region (19); a drain region (20); a channel forming region (21) connecting said source
region and said drain region; a gate (22) for applying an electric field to said
channel forming region; and a carrier confinement region (24) isolated from said
channel forming region by a potential barrier between said
channel forming region and the carrier confinement region,
wherein said carrier confinement region is formed of a
conductor or semiconductor grains disposed between said
channel forming region and said gate and surrounded by an
insulator, characterized in that the distance between said carrier confinement region
and said channel forming region is larger than 3 nm.
Claim 2
Dependent Claim
25 words
The semiconductor element according to claim 1,
wherein the grain size of said carrier confinement region has
a diameter of no more then 30 nm.
Claim 3
Dependent Claim
19 words
The semiconductor element according to claim 1 or 2,
wherein a plurality of said carrier confinement regions are
provided.
Claim 4
Dependent Claim
20 words
The semiconductor element according to any of claims
1 to 3, wherein said carrier confinement region is comprised of silicon.
Claim 5
Dependent Claim
20 words
The semiconductor element according to any of the
preceding claims, wherein said carrier confinement region is comprised of
monocrystalline grains.
Claim 6
Dependent Claim
24 words
The semiconductor element according to any of the
preceding claims, wherein said carrier confinement region has a capacitance of
no more than 3 aF.
Claim 7
Dependent Claim
18 words
The semiconductor element according to any of the
preceding claims, wherein said insulator is comprised of silicon oxide.
Claim 8
Dependent Claim
23 words
The semiconductor element according to any of the
preceding claims, wherein the length and width of said gate are smaller than 1
micron.
Claim 9
Dependent Claim
96 words
A semiconductor element comprising a channel (21) establishing a carrier path; crystal grains disposed over said channel and isolated
from said channel and a first insulator (25) formed between the channel and
the crystal grains; and a gate electrode (22) disposed on said crystal grains
and isolated from said channel by said first insulator,
said crystal grains and a second insulator formed between
the gate electrode and the crystal grains, characterized in that the distance between said crystal grains and said
gate electrode is larger than the distance between said
channel region and said crystal grains.
Claim 10
Dependent Claim
26 words
A semiconductor element according to claims 9, wherein the carrier value flowing into said channel region
changes in accordance with carriers captured by said crystal
grains.
Claim 11
Dependent Claim
16 words
A semiconductor element according to claim 9 or 10,
wherein said crystal grains are monocrystalline silicone.
Claim 12
Dependent Claim
26 words
A semiconductor element according to any of claims 9
to 11, wherein said crystal grains are disposed over said channel in
the form of plural grains.
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