EP0933820A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor element and semiconductor memory device using the same
Assignee: Hitachi Ltd
•
Filing: 1994-08-12
•
Granted: —
•
Expires: 2014-08-12
Abstract
Abstract A semiconductor element includes a source region, a drain region, a channel forming region connecting said source region and said drain region and a gate applying an electric field to said channel forming region, and a carrier confinement region isolated by said channel forming region and by a potential barrier between said channel forming region and the carrier confinement region, wherein said carrier confinement region is formed of a conductor or semiconductor grains disposed between said channel forming region and said gate and surrounded by an insulator.
Inventors
- 👤 Kazuo Yano
- 👤 Tomoyuki Ishii
- 👤 Takashi Hashimoto
- 👤 Koichi Seki
- 👤 Masakazu Aoki
- 👤 Takeshi Sakata
- 👤 Yoshinobu Nakagome
- 👤 Kan Takeuchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 08:55
CPC Classifications
H; H10; H10B; H10B12/00; B; B82; B82Y; B82Y10/00; G; G11; G11C; G11C11/00; G11C11/21; G11C11/22; G11C11/34; G11C11/40; G11C11/401; G11C11/403; G11C11/404; G11C16/00; G11C16/02; G11C16/04; G11C16/0466; G11C16/06; G11C16/10; G11C16/26; G11C16/28; H10B41/00; H10B41/20; H10B41/40; H10B41/42; H10B41/49; H10B69/00; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0411; H10D30/40; H10D30/402; H10D30/60; H10D30/68; H10D30/688; H10D30/6891; H10D30/6892; H10D64/00; H10D64/01; H10D64/031; H10D64/035; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D88/00; H10D88/01; G11C2216/00; G11C2216/02; G11C2216/06; G11C2216/08; H10D30/62; H10D86/00; H10D86/201
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
200 words
A semiconductor element, comprising a source region (19) constituting a source of said semiconductor
element; a drain region constituting a drain (20) of said semiconductor
element; said source region (19) being connected to said drain
region (20) through a channel region (21) interposed therebetween; a gate electrode (22) connected to said channel region
(21) through a gate insulation film (23) interposed between
said gate electrode (22) and said channel region (21); at least one carrier confinement region (24) formed in
the vicinity of said channel region (21) for confining a carrier;
and a potential barrier (25) existing between said carrier
confinement region (24) and said channel region (21); wherein a value of capacitance between said channel region
(21) and said carrier confinement region (24) is set
greater than capacitance between said gate electrode (22) and
said carrier confinement region (24); and wherein total capacitance (C tt ) existing around said
carrier confinement region (24) is so set as to satisfy a
condition given by the following inequality expression: q 2 /2C tt > kT where C tt represents said total capacitance, k represents Boltzmann's constant, T represents an operating temperature in degree Kelvin, and q represents charge of an electron.
Claim 2
Dependent Claim
65 words
A semiconductor element according to claim 1, wherein an
effective capacitance (Cgc) between said gate electrode and
said effective channel region is set as to satisfy a condition
given by the following inequality expression: 1/C gc > kT/q 2 wherein C gc represents said effective capacitance, k represents Boltzmann's constant, T represents an operating temperature in degree Kelvin, and q represents charge of an electron.
Claim 3
Dependent Claim
22 words
A semiconductor element according to claim 1 or 2,
wherein said effective channel region (21) is provided on an
insulation film (25).
Claim 4
Dependent Claim
53 words
A semiconductor element according to any of claims 1 to
3, wherein said gate electrode includes a first gate electrode
(31) and a second gate electrode (32); and said effective channel region (33) and said carrier confinement
region (34) being disposed between said first gate
electrode (31) and said second gate electrode (32).
Claim 5
Dependent Claim
47 words
A semiconductor element according to any of claims 1 to
4, wherein said gate electrode includes a first gate electrode
(37) and a second gate electrode (38); and said second gate electrode (38) is disposed between said
first gate electrode (37) and said effective channel region
(39).
Claim 6
Dependent Claim
26 words
A semiconductor element according to any of claims 1 to
5, wherein an island of crystal thin film is used for forming
said carrier confinement region.
Claim 7
Dependent Claim
92 words
A semiconductor element, comprising a source region (19), a drain region (20), a channel
forming region (21) connecting said source region and said
drain region and a gate (22) applying an electric field to
said channel forming region, and a carrier confinement region
(24) isolated by said channel forming region and by a potential
barrier between said channel forming region and the carrier
confinement region, wherein said carrier confinement region is formed of a
conductor or semiconductor grains disposed between said channel
forming region and said gate and surrounded by an insulator.
Claim 8
Dependent Claim
25 words
A semiconductor element according to claim 7, wherein
the grain size of said carrier confinement region has a diameter
of no more than 30 nm.
Claim 9
Dependent Claim
19 words
A semiconductor element according to claim 7 or 8,
wherein a plurality of said carrier confinement regions are
provided.
Claim 10
Dependent Claim
20 words
A semiconductor element according to any of claims 7 to
9, wherein said carrier confinement region is comprised of
silicon.
Claim 11
Dependent Claim
21 words
A semiconductor element according to any of claims 7 to
10, wherein said carrier confinement region is comprised of
monocrystalline grains.
Claim 12
Dependent Claim
25 words
A semiconductor element according to any of claims 7 to
11, wherein said carrier confinement region has a capacitance
of no more than 3 aF.
Claim 13
Dependent Claim
20 words
A semiconductor element according to any of claims 7 to
12, wherein said insulator is comprised of a silicon oxide.
Claim 14
Dependent Claim
24 words
A semiconductor element according to any of claims 7 to
13, wherein the length and width of said gate are smaller
than 1 micron.
Claim 15
Dependent Claim
94 words
A semiconductor element comprising a channel (21) establishing a carrier path, crystal
grains disposed over said channel and isolated by said channel
and a first insulator (25) formed between the channel and
the crystal grains and a gate electrode (22) disposed on said
crystal grains and isolated from said channel by said first
insulator, said crystal grains and a second insulator formed
between the gate electrode and the crystal grains; wherein the distance between said crystal grains and
said gate electrode is larger than the distance between said
channel region and said crystal grains.
Claim 16
Dependent Claim
26 words
A semiconductor element according to claim 15, wherein
the carrier value flowing into said channel region changes in
accordance with carriers captured by said crystal grains.
Claim 17
Dependent Claim
16 words
A semiconductor element according to claim 15 or 16,
wherein said crystal grains are monocrystalline silicon.
Claim 18
Dependent Claim
26 words
A semiconductor element according to any of claims 15 to
17, wherein said crystal grains are disposed over said channel
in the form of plural grains.
Claim 19
Dependent Claim
126 words
A semiconductor element comprising a channel (21), a semiconductor region (24) disposed
over said channel and isolated by said channel and a first
insulator formed between the semiconductor region and the
channel, and a gate electrode (22) disposed over said semiconductor
region and isolated from said channel by said semiconductor
region, wherein the distance between said semiconductor region
and said gate electrode is larger than the distance between
said channel region and said semiconductor region, and said semiconductor region in an X-axis direction is
smaller in length than said channel and said gate electrode
in an X-axis direction, where the direction of an alignment
between a source and said gate electrode is assumed as an X-axis
and the orthogonal direction thereof is assumed as a Y-axis.
Claim 20
Dependent Claim
30 words
A semiconductor element according to claim 19, wherein
the Y-axis direction of said semiconductor region is smaller
in length than the Y-axis direction of said channel and said
gate electrode.
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JPS5974680A
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JPH03253072A
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JPH05129632A
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US5357134A
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