Patent US2613715A successfully refreshed from Google Patents.
Patent EP0636702A1 successfully refreshed from Google Patents.
EP0636702A1
Expired / Lapsed
EP
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Methods for producing functional films
Assignee: AGC Inc
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Filing: 1994-07-26
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Granted: —
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Expires: 2014-07-26
Abstract
Abstract A method for producing a transparent conductive film composed mainly of an oxide by sputtering using a sputtering target capable of forming a transparent conductive film, wherein intermittent electric power is supplied to the target.
Inventors
- 👤 Junichi Asahi Glass Company Ltd. Shimizu
- 👤 Shujiro Asahi Glass Company Ltd. Watanabe
- 👤 Satoru Ag Technology Co. Ltd. Takaki
- 👤 Hisashi Asahi Glass Company Ltd. Osaki
- 👤 Takuji Asahi Glass Company Ltd. Oyama
- 👤 Eiichi Asahi Glass Company Ltd. Ando
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 13:26
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/34; H01J37/3411; H01J37/3444; C; C03; C03C; C03C17/00; C03C17/001; C03C17/002; C03C17/22; C03C17/225; C03C17/23; C03C17/245; C03C17/2453; C03C17/34; C03C17/3411; C03C17/3429; C03C17/3435; C23; C23C; C23C14/00; C23C14/06; C23C14/0641; C23C14/0652; C23C14/08; C23C14/086; C23C14/10; C23C14/22; C23C14/34; C23C14/35; H01B; H01B1/00; H01B1/06; H01B1/08; C03C2217/00; C03C2217/20; C03C2217/21; C03C2217/211; C03C2217/213; C03C2217/214; C03C2217/215; C03C2217/216; C03C2217/23; C03C2217/231; C03C2217/24; C03C2217/244; C03C2217/28; C03C2217/281; C03C2217/90; C03C2217/94; C03C2217/948; C03C2218/00; C03C2218/10; C03C2218/15; C03C2218/154; C03C2218/155; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1343; G02F1/13439
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
35 words
A method for producing a transparent conductive film composed mainly of an oxide by sputtering using a sputtering target capable of forming a transparent conductive film, wherein intermittent electric power is supplied to the target.
Claim 2
Independent Claim
35 words
A method for producing a transparent conductive film composed mainly of an oxide by sputtering using a sputtering target capable of forming a transparent conductive film, wherein intermittent electric power is supplied to the target.
Claim 3
Dependent Claim
18 words
The method according to Claim 1, wherein the sputtering target is composed mainly of tin or tin oxide.
Claim 4
Dependent Claim
17 words
The method according to Claim 2, wherein the sputtering target contains metal antimony or an antimony compound.
Claim 5
Dependent Claim
18 words
The method according to Claim 1, wherein the sputtering target is composed mainly of indium or indium oxide.
Claim 6
Dependent Claim
12 words
The method according to Claim 4, wherein the sputtering target contains tin.
Claim 7
Dependent Claim
18 words
The method according to Claim 1, wherein the sputtering target is composed mainly of zinc or zinc oxide.
Claim 8
Dependent Claim
34 words
The method according to Claim 6, wherein the sputtering target contains a simple substance or a compound of at least one metal selected from the group consisting of aluminum, gallium, indium, boron and silicon.
Claim 9
Independent Claim
64 words
The method according to any one of Claims 1 to 7, wherein the voltage waveform of the intermittent electric power is such that the application time of negative voltage is within a range of from 10 /1.s to 10 ms, and the sum of non-application time and the application time of positive voltage is within a range of from 10 as to 100 ms.
Claim 10
Independent Claim
35 words
The method according to any one of Claims 1 to 7, wherein the average value of the intermittent electric power is from 2 to 10 times the average value of the electric power per period.
Claim 11
Dependent Claim
25 words
The method according to Claim 9, wherein the average value of the intermittent electric power density is from 2.5 W/cm 2 to 30W/cm 2 .
Claim 12
Independent Claim
27 words
The method according to any one of Claims 1 to 7, wherein the sputtering rate is controlled by the average value of the electric power per period.
Claim 13
Independent Claim
43 words
A method for forming a silicon oxide film having an alkali barrier property on a substrate by sputtering using an oxygen-containing gas as the sputtering gas and a sputtering target composed mainly of silicon, wherein intermittent negative voltage is applied to the target.
Claim 14
Independent Claim
43 words
A method for forming a silicon oxide film having an alkali barrier property on a substrate by sputtering using an oxygen-containing gas as the sputtering gas and a sputtering target composed mainly of silicon, wherein intermittent negative voltage is applied to the target.
Claim 15
Dependent Claim
24 words
The method according to Claim 12, wherein positive voltage is applied during part of the time when the intermittent negative voltage is not applied.
Claim 16
Dependent Claim
16 words
The method according to Claim 12, wherein the substrate is a substrate for a transparent electrode.
Claim 17
Dependent Claim
17 words
The method according to Claim 14, wherein the substrate is a substrate for a liquid crystal display.
Claim 18
Independent Claim
38 words
A method for forming a silicon nitride film on a substrate by sputtering using a nitrogen-containing gas as the sputtering gas and a sputtering target composed mainly of silicon, wherein intermittent negative voltage is applied to the target.
Claim 19
Independent Claim
38 words
A method for forming a silicon nitride film on a substrate by sputtering using a nitrogen-containing gas as the sputtering gas and a sputtering target composed mainly of silicon, wherein intermittent negative voltage is applied to the target.
Claim 20
Dependent Claim
25 words
The method according to Claim 16, wherein positive voltage is applied during part of the time when the above intermittent negative voltage is not applied.
Claim 21
Dependent Claim
57 words
The method according to Claim 16, wherein the substrate is a substrate for a transparent electrode, and the nitrogen concentration in the sputtering gas and/or the supplied power to the target is adjusted so that the ratio in the number of atoms of nitrogen to silicon in the silicon nitride film will be from 1.30 to 1.37.
Claim 22
Dependent Claim
111 words
The method according to Claim 16, wherein the substrate is a Low-E glass having a silver based Low-E coating, a conductive glass having a silver based conductive coating, a magnetic disk having a magnetic layer or a fluoro phosphate glass filter for a charge coupled image pickup tube, and said silicon nitride film is formed on top of the coating or in the coating as a part of the coating and the nitrogen concentration in the sputtering gas and/or the supplied power to the target is adjusted so that the ratio in the number of atoms of nitrogen to silicon in the silicon nitride film will be from 1.25 to 1.35.
Claim 23
Dependent Claim
118 words
The method according to Claim 16, wherein the substrate is a heat reflecting glass having a heat reflecting coating in which a metal or a metal nitride layer is incorporated, a conductive glass having a transparent conductive layer, or a Low-E glass having a silver based Low-E coating to which post-heat-treatment is to be applied, and said silicon nitride film is formed on top of the coating or in the coating as a part of the coating and the nitrogen concentration in the sputtering gas and/or the supplied power to the target is adjusted so that the ratio in the number of atoms of nitrogen to silicon in the nitrogen nitride film will be from 1.25 to 1.35.
References Cited (Backward Citations)
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