EP0445535A2
Expired / Lapsed
EP
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Method of forming an oxide film
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1991-02-05
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Granted: —
•
Expires: 2011-02-05
Abstract
Abstract A method of forming an oxide film and a method of manufacturing an electronic device utilizing the oxide film is disclosed. A silicon oxide film is formed on a substrate by sputtering. Therefore, the film formation is carried out at a low temperature. The sputtering atmosphere comprises an oxidizing gas and an inert gas such as argon. In order to prevent fixed electric charges from being generated in the film and to obtain an oxide film of good properties, the proportion of argon is adjusted to 20% or less. Alternatively, a gas including halogen elements such as fluorine is added to the above sputtering atmosphere at a proportion less than 20%. Hereupon, alkali ions and dangling bonds of silicon in the oxide film are neutralized by the halogen elements, whereby a fine oxide film is obtained.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Hongyong Zhang
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 07:16
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C23; C23C; C23C14/00; C23C14/06; C23C14/10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/6922; H10P14/6924; H10P14/6302; H10P14/6319
Claims Analysis
Total Claims: 71
Claim 1
Independent Claim
49 words
A method of forming an oxide film comprising the step of: depositing an oxide film on a surface to be coated by sputtering a target in an atmosphere comprising an oxidizing gas and an inert gas at a volume ratio (said oxidizing gas)/(said inert gas) of 1.0 or more.
Claim 2
Dependent Claim
15 words
The method of claim 1 wherein said oxidizing gas comprises oxygen, ozone, or nitrous oxide.
Claim 3
Dependent Claim
11 words
The method of claim 1 wherein said inert gas comprises argon.
Claim 4
Dependent Claim
14 words
The method of claim 1 wherein said surface is a surface of a glass.
Claim 5
Dependent Claim
14 words
The method of claim 1 wherein said surface is a surface of a conductor.
Claim 6
Dependent Claim
14 words
The method of claim 1 wherein said surface is a surface of a semiconductor.
Claim 7
Dependent Claim
14 words
The method of claim 1 wherein said surface is a surface of a plastic.
Claim 8
Dependent Claim
19 words
The method of claim 1 wherein said depositing step is carried out at a temperature not higher than 300°C.
Claim 9
Independent Claim
33 words
A method of forming an oxide film comprising the step of: depositing an oxide film on a surface to be coated by sputtering a target in an atmosphere consisting of an oxidizing gas.
Claim 10
Dependent Claim
15 words
The method of claim 9 wherein said oxidizing gas comprises oxygen, ozone, or nitrous oxide.
Claim 11
Dependent Claim
19 words
The method of claim 9 wherein said depositing step is carried out at a temperature not higher than 300°C.
Claim 12
Dependent Claim
14 words
The method of claim 9 wherein said atmosphere is a 100% oxidizing gas atmosphere.
Claim 13
Independent Claim
48 words
A method of forming a field effect transistor comprising the step of: depositing a gate oxide film on a semiconductor by sputtering a target in an atmosphere comprising an oxidizing gas and an inert gas at a volume ratio (said oxidizing gas)/(said inert gas) of 1.0 or more.
Claim 14
Dependent Claim
18 words
The method of claim 13 further comprising the step of annealing said gate oxide film by laser radiation.
Claim 15
Dependent Claim
20 words
The method of claim 13 further comprising the step of annealing said gate oxide film by radiation of laser pulses.
Claim 16
Dependent Claim
14 words
The method of claim 13 wherein said semiconductor is formed on a glass substrate.
Claim 17
Dependent Claim
19 words
The method of claim 13 wherein said depositing step is carried out at a temperature not higher than 300°C.
Claim 18
Independent Claim
32 words
A method of forming a field effect transistor comprising the step of: depositing a gate oxide film on a semiconductor by sputtering a target in an atmosphere consisting of an oxidizing gas.
Claim 19
Dependent Claim
15 words
The method of claim 18 wherein said oxidizing gas comprises oxygen, ozone, or nitrous oxide.
Claim 20
Dependent Claim
19 words
The method of claim 18 wherein said depositing step is carried out at a temperature not higher than 300°C.
Claim 21
Dependent Claim
14 words
The method of claim 18 wherein said atmosphere is a 100% oxidizing gas atmosphere.
Claim 22
Independent Claim
69 words
A method of forming a thin film transistor comprising the steps of: depositing intrinsic semiconductor islands on a glass substrate; forming source and drain regions comprising p-type or n-type semiconductor on said substrate; depositing an oxide film on said semiconductor islands by sputtering a target in an atmosphere comprising an oxidizing gas and an inert gas at a volume ratio (said oxidizing gas)/(said inert gas) of 1.0 or more.
Claim 23
Dependent Claim
15 words
The method of claim 22 wherein said oxidizing gas comprises oxygen, ozone, or nitrous oxide.
Claim 24
Dependent Claim
11 words
The method of claim 22 wherein said inert gas comprises argon.
Claim 25
Dependent Claim
19 words
The method of claim 22 further comprising the step of radiating said oxide film with an excimer laser beam.
Claim 26
Dependent Claim
28 words
The method of claim 22 further comprising the step of annealing said oxide film and said semiconductor islands by radiating said oxide film with an excimer laser beam.
Claim 27
Dependent Claim
20 words
The method of claim 22 wherein said oxide film depositing step is carried out at temperature not higher than 300°C.
Claim 28
Independent Claim
53 words
A method of forming a thin film transistor comprising the steps of: depositing intrinsic semiconductor islands on a glass substrate; forming source and drain regions comprising p-type or n-type semiconductor on said substrate; depositing an oxide film on said semiconductor islands by sputtering a target in an atmosphere consisting of an oxidizing gas.
Claim 29
Dependent Claim
15 words
The method of claim 28 wherein said oxidizing gas comprises oxygen, ozone, or nitrous oxide.
Claim 30
Dependent Claim
21 words
The method of claim 28 wherein said oxide film depositing step is carried out at a temperature not higher than 300°C.
Claim 31
Dependent Claim
14 words
The method of claim 28 wherein said atmosphere is a 100% oxidizing gas atmosphere.
Claim 32
Independent Claim
58 words
A method of forming an oxide film comprising the step of: depositing an oxide film on a surface to be coated by sputtering a target in an atmosphere comprising an oxidizing gas, an inert gas, and a halogen containing gas at a volume ratio (said oxidizing gas + said halogen containing gas)/(said inert gas) of 1.0 or more.
Claim 33
Dependent Claim
15 words
The method of claim 32 wherein said oxidizing gas comprises oxygen, ozone, or nitrous oxide.
Claim 34
Dependent Claim
11 words
The method of claim 32 wherein said inert gas comprises argon.
Claim 35
Dependent Claim
14 words
The method of claim 32 wherein said surface is a surface of glass substrate.
Claim 36
Dependent Claim
14 words
The method of claim 32 wherein said surface is a surface of a plastic.
Claim 37
Dependent Claim
14 words
The method of claim 32 wherein said surface is a surface of a conductor.
Claim 38
Dependent Claim
14 words
The method of claim 32 wherein said surface is a surface of a semiconductor.
Claim 39
Dependent Claim
19 words
The method of claim 32 wherein said depositing step is carried out at a temperature not higher than 300°C.
Claim 40
Dependent Claim
26 words
The method of claim 32 wherein said depositing step is carried out at a volume ratio (said halogen containing gas)/(said oxidizing gas) of 0.2 or less.
Claim 41
Dependent Claim
20 words
The method of claim 32 wherein said halogen containing gas comprises NF₃, N₂F₄, HF, F₂, fleon, CCl₄, Cl₂, or HCl.
Claim 42
Independent Claim
51 words
A method of forming an oxide film comprising the step of: depositing an oxide film on a surface to be coated by sputtering a target in an atmosphere comprising an oxidizing gas and a halogen containing gas at a volume ratio (said halogen containing gas)/(said oxidizing gas) of 0.2 or less.
Claim 43
Dependent Claim
15 words
The method of claim 42 wherein said oxidizing gas comprises oxygen, ozone, or nitrous oxide.
Claim 44
Dependent Claim
15 words
The method of claim 42 wherein said surface is a surface of a glass substrate.
Claim 45
Dependent Claim
14 words
The method of claim 42 wherein said surface is a surface of a plastic.
Claim 46
Dependent Claim
14 words
The method of claim 42 wherein said surface is a surface of a conductor.
Claim 47
Dependent Claim
14 words
The method of claim 42 wherein said surface is a surface of a semiconductor.
Claim 48
Dependent Claim
20 words
The method of claim 42 wherein said halogen containing gas comprises NF₃, N₂F₄, HF, F₂, fleon, CCl₄, Cl₂, or HCl.
Claim 49
Dependent Claim
19 words
The method of claim 42 wherein said depositing step is carried out at a temperature not higher than 300°C.
Claim 50
Independent Claim
57 words
A method of forming a field effect transistor comprising the step of: depositing a gate oxide film on a semiconductor by sputtering a target in an atmosphere comprising an oxidizing gas, an inert gas, and a halogen containing gas at a volume ratio (said oxidizing gas + said halogen containing gas)/(said inert gas) of 1.0 or more.
Claim 51
Dependent Claim
18 words
The method of claim 50 further comprising the step of annealing said gate oxide film by laser radiation.
Claim 52
Dependent Claim
20 words
The method of claim 50 further comprising the step of annealing said gate oxide film by radiation of laser pulses.
Claim 53
Dependent Claim
14 words
The method of claim 50 wherein said semiconductor is formed on a glass substrate.
Claim 54
Dependent Claim
26 words
The method of claim 50 wherein said depositing step is carried out at a volume ratio (said halogen containing gas)/(said oxidizing gas) of 0.2 or less.
Claim 55
Dependent Claim
20 words
The method of claim 50 wherein said halogen containing gas comprises NF₃, N₂F₄, HT, F₂, fleon, CCl₄, Cl₂, or HCl.
Claim 56
Dependent Claim
19 words
The method of claim 50 wherein said depositing step is carried out at a temperature not higher than 300°C.
Claim 57
Independent Claim
60 words
A method of forming a field effect transistor comprising the step of: depositing a gate oxide film on a surface to be coated by sputtering a target in an atmosphere comprising an oxidizing gas, an inert gas, and a halogen containing gas at a volume ratio (said oxidizing gas + said halogen containing gas)/(said inert gas) of 1.0 or more.
Claim 58
Dependent Claim
18 words
The method of claim 57 further comprising the step of forming a semiconductor on said gate oxide film.
Claim 59
Dependent Claim
18 words
The method of claim 57 further comprising the step of annealing said gate oxide film by laser radiation.
Claim 60
Dependent Claim
20 words
The method of claim 57 further comprising the step of annealing said gate oxide film by radiation of laser pulses.
Claim 61
Dependent Claim
15 words
The method of claim 57 wherein said surface is a surface of a glass substrate.
Claim 62
Dependent Claim
26 words
The method of claim 57 wherein said depositing step is carried out at a volume ratio (said halogen containing gas)/(said oxidizing gas) of 0.2 or less.
Claim 63
Dependent Claim
20 words
The method of claim 57 wherein said halogen containing gas comprises NF₃, N₂F₄, HF, F₂, fleon, CCl₄, Cl₂, or HCl.
Claim 64
Dependent Claim
19 words
The method of claim 57 wherein said depositing step is carried out at a temperature not higher than 300°C.
Claim 65
Independent Claim
78 words
A method of forming a thin film transistor comprising the steps of: depositing intrinsic semiconductor islands on a glass substrate; forming source and drain regions comprising p-type or n-type semiconductor on said substrate; depositing an oxide film on said semiconductor islands by sputtering a target in an atmosphere comprising an oxidizing gas, an inert gas, and a halogen containing gas at a volume ratio (said oxidizing gas + said halogen containing gas)/(said inert gas) of 1.0 or more.
Claim 66
Dependent Claim
15 words
The method of claim 65 wherein said oxidizing gas comprises oxygen, ozone, or nitrous oxide.
Claim 67
Dependent Claim
11 words
The method of claim 65 wherein said inert gas comprises argon.
Claim 68
Dependent Claim
28 words
The method of claim 65 further comprising the step of annealing said oxide film and said semiconductor islands by radiating said oxide film with an excimer laser beam.
Claim 69
Dependent Claim
26 words
The method of claim 65 wherein said depositing step is carried out at a volume ratio (said halogen containing gas)/(said oxidizing gas) of 0.2 or less.
Claim 70
Dependent Claim
20 words
The method of claim 65 wherein said halogen containing gas comprises NF₃, N₂F₄, HF, F₂, fleon, CCl₄, Cl₂, or HCl.
Claim 71
Dependent Claim
21 words
The method of claim 65 wherein said oxide film depositing step is carried out at a temperature not higher than 300°C.
References Cited (Backward Citations)
No citation records indexed.
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