EP0385475A2
Expired / Lapsed
EP
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Method of forming a transparent conductive film
Assignee: AGC Inc
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Filing: 1990-03-01
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Granted: —
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Expires: 2010-03-01
Abstract
Abstract In a method of forming a transparent conductive film, an arc discharge type plasma (9) produced by arc discharging is generated in an atmosphere wherein the pressure of an atmospheric gas is 3.0 x 10<-><4> Torr or higher; the plasma (9) is converged onto a vapor deposition material (3) for forming a transparent conductive film to thereby evaporate the vapor deposition material (3), whereby said transparent conductive film is formed on a substrate (6) located above said vapor deposition material.
Inventors
- 👤 Takeshi Harano
- 👤 Satoru Takaki
- 👤 Yuzo Shigesato
- 👤 Koichi Suzuki
- 👤 Naoki Hashimoto
- 👤 Hiroyasu Kojima
- 👤 Takuji Oyama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 04:37
CPC Classifications
C; C23; C23C; C23C4/00; C23C4/04; C23C14/00; C23C14/22; C23C14/24; C23C14/32; C23C14/325; C03; C03C; C03C17/00; C03C17/22; C03C17/23; C03C17/245; C03C17/2453; C23C14/06; C23C14/08; C23C14/086; C03C2217/00; C03C2217/20; C03C2217/21; C03C2217/211; C03C2217/215; C03C2217/216; C03C2217/23; C03C2217/231; C03C2218/00; C03C2218/10; C03C2218/15; C03C2218/151
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
77 words
A method of forming a transparent conductive film characterized in that an arc discharge type plasma produced by arc discharging is generated in an atmosphere wherein the pressure of an atmospheric gas is 3.0 x 10⁻⁴ Torr or higher; the plasma is converged onto a vapor deposition material for forming a transparent conductive film to thereby evaporate the vapor deposition material, whereby said transparent conductive film is formed on a substrate located above said vapor deposition material.
Claim 2
Independent Claim
77 words
A method of forming a transparent conductive film characterized in that an arc discharge type plasma produced by arc discharging is generated in an atmosphere wherein the pressure of an atmospheric gas is 3.0 x 10⁻⁴ Torr or higher; the plasma is converged onto a vapor deposition material for forming a transparent conductive film to thereby evaporate the vapor deposition material, whereby said transparent conductive film is formed on a substrate located above said vapor deposition material.
Claim 3
Dependent Claim
23 words
The method of forming a transparent conductive film according to Claim 1, wherein the atmospheric gas is He or a gas containing He.
Claim 4
Dependent Claim
37 words
The method of forming a transparent conductive film according to Claim 1, wherein the atmospheric gas is Ar or a gas containing Ar and the pressure of the atmospheric gas is 5.0 x 10⁻⁴ Torr or higher.
Claim 5
Independent Claim
30 words
The method of forming a transparent conductive film according to anyone of Claims 1 through 3, wherein the transparent conductive film has a compressive stress of 5000 kgf/cm² or lower.
Claim 6
Dependent Claim
36 words
The method of forming a transparent conductive film according to Claim 4, wherein the transparent conductive film contains as the major component one selected from the group consisting of indium oxide, tin oxide and zinc oxide.
Claim 7
Dependent Claim
60 words
The method of forming a transparent conductive film according to Claim 5, wherein said transparent conductive film is formed on the substrate at the temperature of 200°C or higher, and wherein it is essentially composed of a tin-doped indium oxide and has a compressive stress of 5000 kgf/cm² or lower and a resistivity of 2 x 10⁻⁴ Ω·cm or lower.
Claim 8
Dependent Claim
60 words
The method of forming a transparent conductive film according to Claim 5, wherein said transparent conductive film is formed on the substrate at the temperature of 200°C or lower, and wherein it is essentially composed of a tin-doped indium oxide and has a compressive stress of 5000 kgf/cm² or lower and a resistivity of 3 x 10⁻⁴ Ω·cm or lower.
Claim 9
Dependent Claim
80 words
A method of preparing a conductive substrate with a color filter characterized in that a color filter is formed on a substrate; and when the substrate is at the temperature of 200°C or lower, a transparent conductive film essentially composed of a tin-doped indium oxide wherein the compressive stress is 5000 kgf/cm² or lower and the resistivity is 3 x 10⁻⁴ Ω·cm or lower, is formed on said color filter in accordance with the method as described in Claim 5.
Claim 10
Dependent Claim
98 words
The method of forming a transparent conductive film according to anyone of Claims 1 through 7, or the method of preparing a conductive substrate with a color filter according to Claim 8, wherein an arc discharge plasma is deformed in a form of sheet by applying a magnetic field to the plasma, and the sheet plasma is guided onto a vapor deposition material by the magnetic field of an elongated permanent magnet extending in the width direction of the sheet plasma so that the transparent conductive film is formed on a substrate located above the vapor deposition material.
Claim 11
Dependent Claim
27 words
A transparent conductive substrate which has a transparent conductive film formed on a substrate in accordance with the method described in anyone of Claims 1 through 4.
Claim 12
Dependent Claim
32 words
The transparent conductive substrate according to Claim 10, wherein said transparent conductive film contains as the major component one selected from the group consisting of indium oxide, tin oxide and zinc oxide.
Claim 13
Dependent Claim
44 words
The transparent conductive substrate according to Claim 11, wherein said transparent conductive film is essentially composed of a tin doped indium oxide, and said film has an compressive stress of 5000 kgf/cm² or lower and a resistivity of 2 x 10⁻⁴ Ω·cm or lower.
Claim 14
Dependent Claim
66 words
The transparent conductive substrate with a color filter characterized by comprising a substrate, a color filter formed on the substrate and a transparent conductive film formed on the color filter, wherein the transparent conductive film is essentially composed of a tin doped indium oxide and said film has an compressive stress of 5000 kgf/cm² or lower and a resistivity of 3 x 10⁻⁴ Ω·cm or lower.
Claim 15
Dependent Claim
66 words
The transparent conductive substrate with a color filter characterized by comprising a substrate, a color filter formed on the substrate and a transparent conductive film formed on the color filter, wherein the transparent conductive film is essentially composed of a tin doped indium oxide and said film has an compressive stress of 5000 kgf/cm² or lower and a resistivity of 3 x 10⁻⁴ Ω·cm or lower.
References Cited (Backward Citations)
No citation records indexed.
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