EP0478463A1
Expired / Lapsed
EP
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Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1991-09-27
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Granted: —
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Expires: 2011-09-27
Abstract
Abstract A superconducting device comprises a superconducting channel constituted of an oxide superconductor thin film formed on a substrate, a source electrode and a drain electrode formed at opposite ends of the superconducting channel so that a superconducting current can flow through the superconducting channel between the source electrode and the drain electrode, and a gate electrode located on the superconducting channel so as to control the superconducting current flowing through the superconducting channel. The gate electrode is formed on an insulating layer formed on the superconducting channel, and the superconducting channel has a thickness of not greater than about five nanometers in a direction of an electric field created by the gate electrode. In addition, the superconducting channel, the source electrode and the drain electrode are formed of an α-axis oriented oxide superconductor thin film.
Inventors
- 👤 Takao Nakamura
- 👤 Hiroshi Inada
- 👤 Michitomo Iiyama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 06:22
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/20; H10N60/205; H10N60/207
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
115 words
A superconducting device comprising a substrate, a superconducting channel constituted of an oxide superconductor thin film formed on said substrate, a source electrode and a drain electrode formed at opposite ends of the superconducting channel so that a superconducting current can flow through the superconducting channel between the source electrode and the drain electrode, and a gate electrode located on the superconducting channel so as to control the superconducting current flowing through the superconducting channel, said gate electrode being formed on an insulating layer formed on the superconducting channel, and the superconducting channel having a thickness of not greater than about five nanometers in a direction of an electric field created by said gate electrode.
Claim 2
Dependent Claim
28 words
A superconducting device claimed in Claim 1 wherein said superconducting channel, said source electrode and said drain electrode are formed of an α-axis oriented oxide superconductor thin film.
Claim 3
Dependent Claim
48 words
A superconducting device claimed in Claim 1 wherein said oxide superconductor thin film is formed of an oxide superconductor material selected from the group consisting of a Y-Ba-Cu-O type compound oxide superconductor material, a Bi-Sr-Ca-Cu-O type compound oxide superconductor material, and a Tl-Ba-Ca-Cu-O type compound oxide superconductor material.
Claim 4
Dependent Claim
38 words
A superconducting device claimed in Claim 3 wherein the substrate is formed of a material selected from the group consisting of a MgO (100) substrate, a SrTiO₃ (100) substrate and a CdNdAlO₄ (001) substrate, and a semiconductor substrate.
Claim 5
Dependent Claim
42 words
A superconducting device claimed in Claim 3 wherein the substrate is formed of a silicon substrate and a principal surface of the silicon substrate is coated with an insulating material layer which is formed of a MgAlO₄ layer and a BaTiO₃ layer.
Claim 6
Dependent Claim
61 words
A superconducting device claimed in Claim 1 wherein said substrate has a projection formed in a principal surface thereof, and an oxide superconductor thin film is formed to cover said projection formed on said principal surface and has a substantially planar surface, said superconducting channel being formed of a thinned portion of said oxide superconductor thin film positioned on said projection,
Claim 7
Dependent Claim
21 words
A superconducting device claimed in Claim 6 wherein said projection is formed of the same material as that of said substrate.
Claim 8
Dependent Claim
42 words
A superconducting device claimed in Claim 6 wherein said projection is formed of a material which is the same as that of said oxide superconductor thin film but which is diffused with constituents of said substrate or constituents added in said substrate.
Claim 9
Dependent Claim
109 words
A superconducting device claimed in Claim 1 wherein said substrate has a planar principal surface, and said superconducting channel is constituted of an oxide superconductor thin film having a thickness of not greater about five nanometers formed on said principal surface of said substrate, and said gate electrode is formed through said gate insulator on said oxide superconductor thin film having a thickness of about five nanometers, each of said source electrode and said drain electrode including a thick oxide superconductor thin film portion which is formed on said oxide superconductor thin film having a thickness of about five nanometers, separately from a corresponding end of said gate electrode.
Claim 10
Dependent Claim
94 words
A superconducting device claimed in Claim 1 wherein said substrate has a planar principal surface, and an oxide superconductor thin film is formed on said principal surface of said substrate so as to contain said gate electrode embedded therein, a portion of said oxide superconductor thin film under said gate electrode having a thickness of not greater than about five nanometers, and forming said superconducting channel, and said gate electrode being isolated from said oxide superconductor thin film by said gate electrode and an insulator formed on opposite side surfaces of said gate electrode.
Claim 11
Dependent Claim
110 words
A superconducting device comprising a substrate, a superconducting channel constituted of an oxide superconductor thin film formed on said substrate, a source electrode and a drain electrode formed at opposite ends of the superconducting channel so that a superconducting current can flow through the superconducting channel between the source electrode and the drain electrode, and a gate electrode located on the superconducting channel so as to control the superconducting current flowing through the superconducting channel, said gate electrode being formed on an insulating layer formed on the superconducting channel, and said superconducting channel, said source electrode and said drain electrode being formed of an α-axis oriented oxide superconductor thin film.
Claim 12
Dependent Claim
48 words
A superconducting device claimed in Claim 11 wherein said oxide superconductor thin film is formed of an oxide superconductor material selected from the group consisting of a Y-Ba-Cu-O type compound oxide superconductor material, a Bi-Sr-Ca-Cu-O type compound oxide superconductor material, and a Tl-Ba-Ca-Cu-O type compound oxide superconductor material.
Claim 13
Dependent Claim
38 words
A superconducting device claimed in Claim 11 wherein the substrate is formed of a material selected from the group consisting of a MgO (100) substrate, a SrTiO₃ (100) substrate and a CdNdAlO₄ (001) substrate, and a semiconductor substrate.
Claim 14
Dependent Claim
42 words
A superconducting device claimed in Claim 11 wherein the substrate is formed of a silicon substrate and a principal surface of the silicon substrate is coated with an insulating material layer which is formed of a MgAlO₄ layer and a BaTiO₃ layer.
Claim 15
Dependent Claim
61 words
A superconducting device claimed in Claim 11 wherein said substrate has a projection formed in a principal surface thereof, and an oxide superconductor thin film is formed to cover said projection formed on said principal surface and has a substantially planar surface, said superconducting channel being formed of a thinned portion of said oxide superconductor thin film positioned on said projection.
Claim 16
Dependent Claim
21 words
A superconducting device claimed in Claim 15 wherein said projection is formed of the same material as that of said substrate.
Claim 17
Dependent Claim
42 words
A superconducting device claimed in Claim 15 wherein said projection is formed of a material which is the same as that of said oxide superconductor thin film but which is diffused with constituents of said substrate or constituents added in said substrate.
Claim 18
Dependent Claim
109 words
A superconducting device claimed in Claim 11 wherein said substrate has a planar principal surface, and said superconducting channel is constituted of an oxide superconductor thin film having a thickness of not greater about five nanometers formed on said principal surface of said substrate, and said gate electrode is formed through said gate insulator on said oxide superconductor thin film having a thickness of about five nanometers, each of said source electrode and said drain electrode including a thick oxide superconductor thin film portion which is formed on said oxide superconductor thin film having a thickness of about five nanometers, separately from a corresponding end of said gate electrode.
Claim 19
Dependent Claim
94 words
A superconducting device claimed in Claim 11 wherein said substrate has a planar principal surface, and an oxide superconductor thin film is formed on said principal surface of said substrate so as to contain said gate electrode embedded therein, a portion of said oxide superconductor thin film under said gate electrode having a thickness of not greater than about five nanometers, and forming said superconducting channel, and said gate electrode being isolated from said oxide superconductor thin film by said gate electrode and an insulator formed on opposite side surfaces of said gate electrode.
References Cited (Backward Citations)
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