Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
118 words
A superconductive transistor comprising a substrate, an oxide superconductor layer epitaxially grown on said substrate, a source electrode, a drain electrode, said source electrode and said drain electrode being arranged on said oxide superconductor layer, an insulator film epitaxially grown on said oxide superconductor layer and located between said two electrodes and a gate electrode located on said insulator film, wherein the following relationship is established, d c ≦ √ (2εV f )/n, wherein d c represents the thickness of the superconductor layer, ε represents the dielectric constant of the superconductor layer, n represents the carrier density of the superconductor layer and V f represents the voltage that corresponds to the forbidden band width of the superconductor layer.
Claim 2
Dependent Claim
118 words
A superconductive transistor comprising a substrate, an oxide superconductor layer epitaxially grown on said substrate, a source electrode, a drain electrode, said source electrode and said drain electrode being arranged on said oxide superconductor layer, an insulator film epitaxially grown on said oxide superconductor layer and located between said two electrodes and a gate electrode located on said insulator film, wherein the following relationship is established, d c ≦ √ (2εV f )/n, wherein d c represents the thickness of the superconductor layer, ε represents the dielectric constant of the superconductor layer, n represents the carrier density of the superconductor layer and V f represents the voltage that corresponds to the forbidden band width of the superconductor layer.
Claim 3
Dependent Claim
152 words
A superconductive transistor comprising a substrate, an oxide superconductor layer epitaxially grown on said substrate, a source electrode, a drain electrode, said source electrode and said drain electrode being arranged on said oxide superconductor layer, an upper insulator film epitaxially grown on an upper side of said oxide superconductor layer and located between said two electrodes, an upper gate electrode provided on said upper insulator film, a lower insulation film epitaxially grown under said oxide superconducting layer, and a lower gate electrode provided under said lower insulator film vis-a-vis to said upper gate electrode, wherein the following relationship is established; d c ≦ 2√ (2εV f )/n, wherein d c represents the thickness of the superconductor layer, ε represents the dielectric constant of the superconductor layer, n represents the carrier density of the superconductor layer and V f represents the voltage that corresponds to the forbidden band width of the superconductor layer.
Claim 4
Dependent Claim
152 words
A superconductive transistor comprising a substrate, an oxide superconductor layer epitaxially grown on said substrate, a source electrode, a drain electrode, said source electrode and said drain electrode being arranged on said oxide superconductor layer, an upper insulator film epitaxially grown on an upper side of said oxide superconductor layer and located between said two electrodes, an upper gate electrode provided on said upper insulator film, a lower insulation film epitaxially grown under said oxide superconducting layer, and a lower gate electrode provided under said lower insulator film vis-a-vis to said upper gate electrode, wherein the following relationship is established; d c ≦ 2√ (2εV f )/n, wherein d c represents the thickness of the superconductor layer, ε represents the dielectric constant of the superconductor layer, n represents the carrier density of the superconductor layer and V f represents the voltage that corresponds to the forbidden band width of the superconductor layer.