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EP0280308A2
Expired / Lapsed
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Superconducting device
Assignee: Hitachi Ltd
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Filing: 1988-02-25
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Granted: —
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Expires: 2008-02-25
Abstract
Abstract A superconducting device includes a type having a structure of a superconductor - a normal-conductor (or a semiconductor) - a superconductor, and a type having a superconducting weak-link portion between superconductors. The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K2NiF4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
Inventors
- 👤 Toshikazu Nishino
- 👤 Ushio Kawabe
- 👤 Yoshinobu Tarutani
- 👤 Shinya Kominami
- 👤 Toshiyuki Aida
- 👤 Tokuumi Fukazawa
- 👤 Mutsuko Hatano
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 21:04
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0912; H10N60/0941; H10N60/10; H10N60/12; H10N60/124; H10N60/128; Y; Y10; Y10S; Y10S505/00; Y10S505/70; Y10S505/701; Y10S505/702; Y10S505/703; Y10S505/704
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
144 words
A superconducting device comprising: either of a semiconductor body and a normal-conductor body (2); and at least two superconductors (3, 3a, 3b) which are formed in contact with said either of said semiconductor body and said normal-conductor body, which are spaced from each other so as to form superconducting weak-link (9) through said either of said semiconductor body and said normal-conductor body and which are made of an oxide of either of perovskite type and K₂NiF₄ type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O; a c-axis of a crystal of said superconductor being substantially perpendicular to a direction of current flowing through said superconductor.
Claim 2
Dependent Claim
144 words
A superconducting device comprising: either of a semiconductor body and a normal-conductor body (2); and at least two superconductors (3, 3a, 3b) which are formed in contact with said either of said semiconductor body and said normal-conductor body, which are spaced from each other so as to form superconducting weak-link (9) through said either of said semiconductor body and said normal-conductor body and which are made of an oxide of either of perovskite type and K₂NiF₄ type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O; a c-axis of a crystal of said superconductor being substantially perpendicular to a direction of current flowing through said superconductor.
Claim 3
Dependent Claim
60 words
A superconducting device according to claim 1, wherein: said either of said semiconductor body and said normal-conductor body (2) is a layer of fixed thickness which is formed on a substrate (1, 11) being flat; and said superconductors are formed on said either of said semiconductor body and said normal-conductor body having the fixed thickness, and hold a space therebetween.
Claim 4
Dependent Claim
46 words
A superconducting device according to claim 2, further comprising a protective film (6) for preventing changes of superconducting characteristics of said superconductors, which protective film is formed on said either of said semiconductor body and said normal-conductor body (2) and on said superconductors (3, 3a, 3b).
Claim 5
Dependent Claim
44 words
A superconducting device according to claim 2, further comprising control means for controlling current flowing between said superconductors, which control means is formed on said either of said semiconductor body and said normal-conductor body and is separated therefrom by an electric insulator film (4).
Claim 6
Dependent Claim
60 words
A superconducting device according to claim 1, wherein: said superconductors (3a, 3b) are layers of fixed thickness which are formed on a substrate being flat, and hold a space therebetween, and said either of said semiconductor body and said normal-conductor body (2) is formed on said superconductors (3, 3a, 3b) and said substrate (1, 11), and also in said space.
Claim 7
Dependent Claim
37 words
A superconducting device according to claim 1, wherein said superconductors are spaced from each other at a distance of 3 to 10 times a coherence length of said either of said semiconductor body and said normal-conductor body.
Claim 8
Dependent Claim
30 words
A superconducting device according to claim 1, wherein said superconductors have a sandwich type structure in which they hold said either of said semiconductor body and said normal-conductor body therebetween.
Claim 9
Dependent Claim
35 words
A superconducting device according to claim 1, wherein said either of said semiconductor body and said normal-conductor body are made of the oxide containing the common elements and the same crystalline structure as said superconductors.
Claim 10
Dependent Claim
42 words
A superconducting device according to claim 1, wherein said c-axis of said crystal of said each superconductor is substantially parallel to a contact plane between said either of said semiconductor body and said normal-conductor body and said superconductors in said superconducting weak-link.
Claim 11
Dependent Claim
42 words
A superconducting device according to claim 1, wherein said c-plane of said crystal of said each superconductor is substantially perpendicular to a contact plane between said either of said semiconductor body and said normal-conductor body and said superconductors in said superconducting weak-link.
Claim 12
Dependent Claim
43 words
A superconducting device according to claim 10, further comprising control means for controlling current flowing between said superconductors, which control means is formed on said either of said semiconductor body and said normal-conductor body and is separated therefrom by an electric insulator film.
Claim 13
Dependent Claim
59 words
A superconducting device according to claim 1, wherein: said either of said semiconductor body and said normal-conductor includes a projection, and said superconductors are formed on said either of said semiconductor body and said normal-conductor body through an electric insulator film so as to lie in contact with side faces of said projection and to hold said projection therebetween.
Claim 14
Dependent Claim
47 words
A superconducting device according to claim 12, further comprising control means for controlling current flowing between said superconductors, which control means is formed so as to cover at least a part of an upper portion of said projection and is separated therefrom by an electric insulator film.
Claim 15
Dependent Claim
24 words
A superconducting device according to claim 2, wherein a principal surface of said substrate is substantially perpendicular to a c-axis of a crystal thereof.
Claim 16
Dependent Claim
35 words
A superconducting device according to claim 14, wherein said either of said semiconductor body and said normal-conductor body and said superconductors are oriented in the same c-axial direction as the crystal axis of said substrate.
Claim 17
Dependent Claim
97 words
A superconducting device comprising: a substrate; at least one superconductor which is formed on said substrate, which is made of an oxide of either of perovskite type and K₂NiF₄ type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O; a c-axis of a crystal of said superconductor being substantially perpendicular to a direction of current flowing through said superconductor.
Claim 18
Dependent Claim
97 words
A superconducting device comprising: a substrate; at least one superconductor which is formed on said substrate, which is made of an oxide of either of perovskite type and K₂NiF₄ type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O; a c-axis of a crystal of said superconductor being substantially perpendicular to a direction of current flowing through said superconductor.
Claim 19
Dependent Claim
40 words
A superconducting device according to claim 16, wherein said superconductor includes at a part thereof a weak-link portion in which a c-axis of a crystal thereof is not substantially perpendicular to said direction of said current flowing through said superconductor.
Claim 20
Dependent Claim
65 words
A superconducting device according to claim 17, wherein said superconductor except said weak-link portion is a single crystal in said direction of said current flowing through said superconductor, and in said weak-link portion, said crystal constituting said superconductor is divided by either of a grain boundary and a twin boundary at a spacing of at most 5 µm vertically to said direction of said current.
Claim 21
Dependent Claim
16 words
A superconducting device according to claim 17, further comprising a photoconductive semiconductor on said weak-link portion.
Claim 22
Dependent Claim
24 words
A superconducting device according to claim 16, wherein a principal surface of said substrate is substantially perpendicular to a c-axis of a crystal thereof.
Claim 23
Dependent Claim
24 words
A superconducting device according to claim 20, wherein said superconductor is oriented in the same c-axial direction as the crystal axis of said substrate.
Claim 24
Dependent Claim
105 words
A superconducting device comprising: a substrate; at least one superconductor which is formed on said substrate, which is made of an oxide of either of perovskite type and K₂NiF₄ type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O; a direction in which current flows through said superconductor being in agreement with a direction in which a superconductivity of the superconducting material constituting said superconductor is high.
Claim 25
Dependent Claim
105 words
A superconducting device comprising: a substrate; at least one superconductor which is formed on said substrate, which is made of an oxide of either of perovskite type and K₂NiF₄ type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O; a direction in which current flows through said superconductor being in agreement with a direction in which a superconductivity of the superconducting material constituting said superconductor is high.
Claim 26
Dependent Claim
147 words
A superconducting device comprising: either of a semiconductor body and a normal-conductor body; and at least tow superconductors which are formed in contact with said either of said semiconductor body and said normal-conductor body, which are spaced from each other so as to form superconducting weak-link through said either of said semiconductor body and said normal-conductor body and which are made of an oxide of either of perovskite type and K₂NiF₄ type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O; a direction in which current flows through said superconductor being in agreement with a direction in which a superconductivity of the superconducting material constituting said superconductor is high.
Claim 27
Dependent Claim
147 words
A superconducting device comprising: either of a semiconductor body and a normal-conductor body; and at least tow superconductors which are formed in contact with said either of said semiconductor body and said normal-conductor body, which are spaced from each other so as to form superconducting weak-link through said either of said semiconductor body and said normal-conductor body and which are made of an oxide of either of perovskite type and K₂NiF₄ type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O; a direction in which current flows through said superconductor being in agreement with a direction in which a superconductivity of the superconducting material constituting said superconductor is high.
Claim 28
Dependent Claim
53 words
A superconducting device comprising: a substrate; at least one superconductor which is formed on said substrate, and which is made of an oxide of either of perovskite type and K₂NiF₄ type crystalline structures, a c-axis of a crystal of said superconductor being substantially perpendicular to a direction of current flowing through said superconductor.
Claim 29
Dependent Claim
53 words
A superconducting device comprising: a substrate; at least one superconductor which is formed on said substrate, and which is made of an oxide of either of perovskite type and K₂NiF₄ type crystalline structures, a c-axis of a crystal of said superconductor being substantially perpendicular to a direction of current flowing through said superconductor.
Claim 30
Dependent Claim
94 words
A superconducting device comprising: either of a semiconductor body and a normal-conductor body; and at least tow superconductors which are formed in contract with said either of said semiconductor body and said normal-conductor body, which are spaced from each other so as to form superconducting weak-link through said either of said semiconductor body and said normal-conductor body and which are made of an oxide of either of perovskite type and K₂NiF₄ type crystalline structures, a c-axis of a crystal of said superconductor being substantially perpendicular to a direction of current flowing through said superconductor.
Claim 31
Dependent Claim
94 words
A superconducting device comprising: either of a semiconductor body and a normal-conductor body; and at least tow superconductors which are formed in contract with said either of said semiconductor body and said normal-conductor body, which are spaced from each other so as to form superconducting weak-link through said either of said semiconductor body and said normal-conductor body and which are made of an oxide of either of perovskite type and K₂NiF₄ type crystalline structures, a c-axis of a crystal of said superconductor being substantially perpendicular to a direction of current flowing through said superconductor.
Claim 32
Dependent Claim
63 words
A superconducting device comprising: a substrate; at least one superconductor which is formed on said substrate, and which property depends upon the crystallographic orientation in such a manner that a superconductivity of the superconducting material constituting said superconductor within a plane is intense, a direction in which current flows through said superconductor being agreement with a direction in which said superconductivity is high.
Claim 33
Dependent Claim
63 words
A superconducting device comprising: a substrate; at least one superconductor which is formed on said substrate, and which property depends upon the crystallographic orientation in such a manner that a superconductivity of the superconducting material constituting said superconductor within a plane is intense, a direction in which current flows through said superconductor being agreement with a direction in which said superconductivity is high.
Claim 34
Dependent Claim
107 words
A superconducting device comprising: a substrate; at least one superconductor which is formed on said substrate, and which property depends upon the crystallographic orientation in such such a manner that a superconductivity of the superconducting material constituting said superconductor within a plane perpendicular to the c-axis of a crystal of said superconductor is intense, a direction in which current flows through said superconductor being agreement with a direction in which said superconductivity is high, wherein said superconductor includes at a part thereof a weak-link portion in which said c-axis of a crystal thereof is not substantially perpendicular to said direction of said current flowing through said superconductor.
Claim 35
Dependent Claim
107 words
A superconducting device comprising: a substrate; at least one superconductor which is formed on said substrate, and which property depends upon the crystallographic orientation in such such a manner that a superconductivity of the superconducting material constituting said superconductor within a plane perpendicular to the c-axis of a crystal of said superconductor is intense, a direction in which current flows through said superconductor being agreement with a direction in which said superconductivity is high, wherein said superconductor includes at a part thereof a weak-link portion in which said c-axis of a crystal thereof is not substantially perpendicular to said direction of said current flowing through said superconductor.
Claim 36
Dependent Claim
139 words
A superconducting device comprising: either of a semiconductor body and a normal-conductor body; and at least two superconductors which are formed in contact with said either of said semiconductor body and said normal-conductor body, which property depends upon the crystallographic orientation in such a manner that a superconductivity of the superconducting material constituting said superconductors within a plane perpendicular to the c-axis of a crystal of said superconductors is intense, which are spaced from each other so as to form superconducting weak-link through said either of saidsemiconductor body and said normal-conductor body, said c-axis being substantially perpendicular to a direction of current flowing through said superconductors, said plane of said crystal of said superconductors is substantially perpendicular to a contact plane between said either of said semiconductor body and said normal-conductor body and said superconductors in said superconducting weak-link.
Claim 37
Dependent Claim
139 words
A superconducting device comprising: either of a semiconductor body and a normal-conductor body; and at least two superconductors which are formed in contact with said either of said semiconductor body and said normal-conductor body, which property depends upon the crystallographic orientation in such a manner that a superconductivity of the superconducting material constituting said superconductors within a plane perpendicular to the c-axis of a crystal of said superconductors is intense, which are spaced from each other so as to form superconducting weak-link through said either of saidsemiconductor body and said normal-conductor body, said c-axis being substantially perpendicular to a direction of current flowing through said superconductors, said plane of said crystal of said superconductors is substantially perpendicular to a contact plane between said either of said semiconductor body and said normal-conductor body and said superconductors in said superconducting weak-link.
References Cited (Backward Citations)
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