EP0276746A2
Expired / Lapsed
EP
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Superconducting device
Assignee: Hitachi Ltd
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Filing: 1988-01-20
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Granted: —
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Expires: 2008-01-20
Abstract
Abstract A superconducting device has a structure of superconductor (3) - normal-conductor or semiconductor (2) - superconductor (3). The superconductors (3) constituting the superconducting device are made of a superconducting oxide material of K₂CuF₄ type or perovskite type crystalline structure which contains at least one element selected from Ba, Sr, Ca, Mg and Ra; at least one element selected from La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu and Tb; Cu; and O.
Inventors
- 👤 Toshikazu Nishino
- 👤 Haruhiro Hasegawa
- 👤 Ushio Kawabe
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 17:48
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/10; H10N60/128; H10N60/80; H10N60/83; H10N60/85; H10N60/855; H10N60/857
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
125 words
A superconducting device comprising: a substrate (1); a semiconductor or normal-conductor (2) formed on said substrate (1) and made of an oxide of perovskite type or K₂NiF₄ type crystalline structure, containing at least one element selected from Ba, Sr, Ca, Mg, and Ra; at least one element selected from La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu and Tb; Cu; and O; and at least two superconductors (3) which are formed in contact with said semiconductor or normal-conductor (2), which are spaced from each other so as to form superconducting weak coupling through said semiconductor or normal-conductor (2) and which are made of an oxide having the same elements and crystalline structure as that of said semiconductor or normal-conductor (2).
Claim 2
Dependent Claim
125 words
A superconducting device comprising: a substrate (1); a semiconductor or normal-conductor (2) formed on said substrate (1) and made of an oxide of perovskite type or K₂NiF₄ type crystalline structure, containing at least one element selected from Ba, Sr, Ca, Mg, and Ra; at least one element selected from La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu and Tb; Cu; and O; and at least two superconductors (3) which are formed in contact with said semiconductor or normal-conductor (2), which are spaced from each other so as to form superconducting weak coupling through said semiconductor or normal-conductor (2) and which are made of an oxide having the same elements and crystalline structure as that of said semiconductor or normal-conductor (2).
Claim 3
Dependent Claim
41 words
The device of claim 1, wherein said semiconductor or normal-conductor (2) is a flat layer of fixed thickness formed on said substrate (1), and said superconductors (3) are formed on said semiconductor or normal-conductor (2) with a space between each other.
Claim 4
Dependent Claim
50 words
The device of claim 1, wherein said superconductors (3) are formed in such a way that at least one element constituting said superconductors is introduced by diffusion or im plantation into said semiconductor or normal-conductor (2), which is flat and has a fixed thickness, thereby to change the composition thereof.
Claim 5
Dependent Claim
59 words
The device of claim 1, wherein said superconductors (3) are provided with a semiconductor or normal-conductor (7) which forms the superconducting weak coupling and is formed in such a way that at least one element constituting said semiconductor or normal-conductor is introduced by diffusion or implantation into part of a superconductor layer (3), thereby to change the composition thereof.
Claim 6
Independent Claim
46 words
The device of any of claims 1 to 4, wherein the oxide material of which said superconductors (3) and said semiconductor or normal-conductor (2) are made has a composition Ba 2x La 2(1-x) CuO 4(1-y) or Sr 2x La 2(1-x) CuO 4(1-y) or YBa₂Cu₃O 7-x .
Claim 7
Independent Claim
46 words
The device of any of claims 1 to 5, wherein the following equation is fulfilled: T -½ [1 + 2/ℓn(T/Tcʹ)] ½ ≧ (4.2) -½ with T denoting the service temperature of said device, and Tcʹ denoting the superconducting critical temperature of said semiconductor or normal-conductor (2).
Claim 8
Independent Claim
41 words
The device of any of claims 1 to 6, wherein said superconductors (3) are spaced from each other by a distance which is 3 to 10 times the coherence length of a superconducting electron pair in said semiconductor or normal-conductor (2).
Claim 9
Independent Claim
44 words
The device of any of claims 1 to 7, further including control means (5) for controlling current flowing between said superconductors (3), which control means (5) is formed on said semiconductor or normal-conductor (2) and is separated therefrom by an electric insulator film (4).
Claim 10
Dependent Claim
19 words
The device of claim 8, wherein said electric insulator film (4) has a thickness of 20 to 80 nm.
Claim 11
Dependent Claim
126 words
A magneto-flux meter comprising: a closed loop which consists of two interconnected superconducting devices (51, 52) as claimed in any of claims 1 to 9; power source terminals (53, 55) which supply electric power to said closed loop incorporated thereacross; an output terminal (54) which delivers a detection signal from said closed loop; a detecting coil (56) which detects a magnetic flux to-be-measured; and a coupling coil (57) which is connected to said detecting coil (56) and which feeds said closed loop with a magnetic flux proportional to the magnetic flux to-be-measured; said detecting coil (56), said coupling coil (57), and wiring among the various constituents being made of thin films or an oxide which has the same composition as that of said superconductors (51, 52).
Claim 12
Dependent Claim
100 words
A superconducting device comprising a semiconductor or normal-conductor body (2); and at least two superconductors (3) which are formed in contact with said semiconductors or normal-conductor body (2), which are spaced from each other so as to form a superconducting weak coupling through said semiconductor or normal-conductor body (2) and which are made of an oxide of perovskite or K₂NiF₄ type crystalline structure, containing at least one element selected from Ba, Sr, Ca, Mg and Ra; at least one element selected from La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu and Tb; Cu; and O.
Claim 13
Dependent Claim
100 words
A superconducting device comprising a semiconductor or normal-conductor body (2); and at least two superconductors (3) which are formed in contact with said semiconductors or normal-conductor body (2), which are spaced from each other so as to form a superconducting weak coupling through said semiconductor or normal-conductor body (2) and which are made of an oxide of perovskite or K₂NiF₄ type crystalline structure, containing at least one element selected from Ba, Sr, Ca, Mg and Ra; at least one element selected from La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu and Tb; Cu; and O.
Claim 14
Dependent Claim
41 words
The device of claim 11, further comprising control means (5) for controlling current flowing between said superconductors (3), which control means (5) is formed on said semiconductor or normal-conductor body (2) and is separated therefrom by an electric insulator film (4).
References Cited (Backward Citations)
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