EP0328819A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Making of doped regions using phosphorus and arsenic
Assignee: Toshiba Corp
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Filing: 1988-12-05
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Granted: —
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Expires: 2008-12-05
Abstract
Abstract The present invention provides a method of manufacturing semiconductor devices having impurity regions that are more shallow and which exhibit less lateral diffusion than devices manufactured in accordance with prior art technques. The method comprising the introduction of arsenic into a substrate (11). After the introduction of arsenic, phosphorus is introduced to the same portion (16) of the substrate (11). The introductions of arsenic and phosphorus may be accomplished using diffusion or ion implantation techniques.
Inventors
- 👤 Hideki Shibata
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 18:49
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10P30/21; H10P30/212; H10P30/28; H10P32/00; H10P32/10; H10P32/14; H10P32/1404; H10P32/1406; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/0698
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
57 words
A method of manufacturing a semiconductor device characterised by the steps of :- a) introducing arsenic into a predetermined portion (16) of a silicon body (11), and b) introducing phosphorus into said predetermined portion (16) after said step of introducing arsenic, thereby forming in the silicon body (11) an N-type impurity region (19) including arsenic and phosphorus.
Claim 2
Independent Claim
57 words
A method of manufacturing a semiconductor device characterised by the steps of :- a) introducing arsenic into a predetermined portion (16) of a silicon body (11), and b) introducing phosphorus into said predetermined portion (16) after said step of introducing arsenic, thereby forming in the silicon body (11) an N-type impurity region (19) including arsenic and phosphorus.
Claim 3
Dependent Claim
31 words
A method according to claim 1 wherein: said step of introducing arsenic comprises the step of ion implanting arsenic, and said step of introducing phosphorus comprises the step of diffusing phosphorus.
Claim 4
Dependent Claim
32 words
A method according to claim 1 wherien: said step of introducing arsenic comprises the step of ion implanting arsenic, and said step of introducing phosphorus comprises the step of ion implanting phosphorus.
Claim 5
Independent Claim
120 words
A method of manufacturing a semiconductor device characteised by the steps of :- a) patterning an isolation field oxide layer (12) surrounding a predefined active area of a silicon substrate (11); b) forming an insualting film (13) on the surface of the predefined active area of the silicon substrate (11); c) patterning the insuating film (17) to expose the surface of a predetermined portion (16) in the active area of the silicon substrate (11); d) depositing a polysilicon layer (17) to cover substantially the substrate surface of the predefined active area; e) patterning the polysilicon layar (17); f) introducing arsenic into said predetermined portion (16); and g) introducing phosphorus into said predetermined portion (16) after said step of introducing arsenic.
Claim 6
Independent Claim
120 words
A method of manufacturing a semiconductor device characteised by the steps of :- a) patterning an isolation field oxide layer (12) surrounding a predefined active area of a silicon substrate (11); b) forming an insualting film (13) on the surface of the predefined active area of the silicon substrate (11); c) patterning the insuating film (17) to expose the surface of a predetermined portion (16) in the active area of the silicon substrate (11); d) depositing a polysilicon layer (17) to cover substantially the substrate surface of the predefined active area; e) patterning the polysilicon layar (17); f) introducing arsenic into said predetermined portion (16); and g) introducing phosphorus into said predetermined portion (16) after said step of introducing arsenic.
Claim 7
Dependent Claim
25 words
A method of manufacturing according to claim 4 wherein: said step of introducing arsenic is performed before said step of depositing a polysilicon layer (20).
Claim 8
Dependent Claim
25 words
A method of manufacturing according to claim 4 wherein: said step of introducing arsenic is performed after said step of depositing a polysilicon layer (20).
Claim 9
Dependent Claim
25 words
A method of manufacturing according to claim 4 wherein: said step of introducing phosphorus is performed after said step of depositing a polysilicon layer (20).
Claim 10
Independent Claim
154 words
A method of manufacturing a semiconductor device characterised by the steps of: a) patterning an isolation field oxide layer (12) surrounding a predefined active area of a silicon substrate (11); b) forming an insulating film (13) on the surface of the predefined active area of the silicon substrate (11); c) depositing a first polysilicon layer (17) to cover substantially the substrate surface of the predefined active area; d) patterning the polysilicon layer (17) and the insulating film (13) to expose the surface of a predetermined portion (16) in the active area of the silicon substrate (11); e) introducing arsenic into said predetermined portion (16); f) depositing a second polysilicon layer (20) to cover substantially the substrate of the predefined active area; g) introducing phosphorus into said predetermined portion (16) after said steps of introducing arsenic and depositing a second polysilicon layer (20); h) patterning said second polysilicon layer (20) to form a wiring layer.
Claim 11
Independent Claim
154 words
A method of manufacturing a semiconductor device characterised by the steps of: a) patterning an isolation field oxide layer (12) surrounding a predefined active area of a silicon substrate (11); b) forming an insulating film (13) on the surface of the predefined active area of the silicon substrate (11); c) depositing a first polysilicon layer (17) to cover substantially the substrate surface of the predefined active area; d) patterning the polysilicon layer (17) and the insulating film (13) to expose the surface of a predetermined portion (16) in the active area of the silicon substrate (11); e) introducing arsenic into said predetermined portion (16); f) depositing a second polysilicon layer (20) to cover substantially the substrate of the predefined active area; g) introducing phosphorus into said predetermined portion (16) after said steps of introducing arsenic and depositing a second polysilicon layer (20); h) patterning said second polysilicon layer (20) to form a wiring layer.
Claim 12
Independent Claim
96 words
A method of manufacturing a semiconductor device characterised by the steps of: a) patterning an isolation field oxide layer (22) surrounding a predefined active area of a silicon substrate (21); b) forming an insualting film (23) on the surface of the predefined active area of the silicon substrate; c) forming a gate electrode (24) on the insualting film; d) introducing arsenic into predetermined portions (25) of the silicon body (21) adjacent to and on either side of the gate electrode (24); and e) introducing phosphorus into the predetermined portions (26) after said step of introducing arsenic.
Claim 13
Independent Claim
96 words
A method of manufacturing a semiconductor device characterised by the steps of: a) patterning an isolation field oxide layer (22) surrounding a predefined active area of a silicon substrate (21); b) forming an insualting film (23) on the surface of the predefined active area of the silicon substrate; c) forming a gate electrode (24) on the insualting film; d) introducing arsenic into predetermined portions (25) of the silicon body (21) adjacent to and on either side of the gate electrode (24); and e) introducing phosphorus into the predetermined portions (26) after said step of introducing arsenic.
Claim 14
Dependent Claim
47 words
A method according to claim 3 or claim 9, wherein: said step of introducing arsenic comprises the step of ion implanting arsenic at a first predetermined acceleration energy, and said step of introducing phosphorus comprises the step of ion implanting phosphorus at a second predetermined acceleration energy.
Claim 15
Dependent Claim
39 words
A method of manufacturing a semiconductor device according to claim 10, wherein: said first and second predetermined acceleration energies of ion implantation are chosen to make the peak depth of phosphorus concentration more shallow than that of arsenic concentration.
References Cited (Backward Citations)
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