Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent the etch-off of a gate oxide film, by attaching a first conducting layer on the gate oxide film, performing the photoetching of a contact region, and performing light etching of a low grade oxide film, which is grown in the contact region. CONSTITUTION:At first, an LOCOS oxide film 3 is formed on an Si substrate 1 then a gate oxide film 2 is formed. Thereafter, polycrystalline Si 4a is attached on the entire surface. Then, with photoresist 5 as a mask, etching is performed, and a part of the Si layer 4A, which is to become a contact region in the future, is removed. Thereafter, the photoresist 5 is removed. A low grade oxide film 11, which has been grown in etching, is removed by light etching. Then, a polycrystalline Si layer 4b is attached. A gate electrode, a wiring electrode part and an etching groove 6 are formed by etching. A contact region 10, a source region 8 and a drain region 9 are formed. Thus, an embedded contact is completed.

Inventors

• 👤 Takashi Shimada
• 👤 喬 島田

Bibliographic Details