Method of forming a thin monocrystalline layer of a semiconductor material on a substrate

Abstract

Abstract A methof of forming a thin monocrystalline layer of a semiconductor material on an insulator, said method comprising depositing a thin polycrystalline or amorphous layer of a semiconductor material on an insulating substrate to form a layered structure and focusing beams from two lamps on the layer of semiconductor material. According to the invention the center of said beams coincide to form a line image on said layer, the power distribution of said layer being such as to provide a narrow melt zone in said layer of semiconductor material at the center of the line image surrounded by two narrow heated zones, the temperature of said narrow heated zones being below the temperature of said melt zone and said narrow heated zone having a temperature differential of from 2-10°C/mm decreases from said melt zone while scanning said layered structure relative to said line image and heating said substrate to a temperature below the temperature of said heated zone. Thus the formation sub-grain boundaries is prevented.

Inventors

• 👤 Subramanian Ramesh

Bibliographic Details