EP0124261A1
Expired / Lapsed
EP
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Process for producing monocrystalline layer on insulator
Assignee: Fujitsu Ltd
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Filing: 1984-03-28
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Granted: —
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Expires: 2004-03-28
Abstract
Abstract A process for producing a monocrystalline layer on an insulator, particularly in a semiconductor wafer adapted for use to produce large-scale integrated circuits, comprising the steps of providing a nonmonocrystalline layer (5) on an insulator (4) and heating a region of the nonmonocrystalline layer by irradiating it from two heat sources (6a, 6b) while moving the heat sources relative to the nonmonocrystalline layer, thereby locally melting and transforming the nonmonocrystalline layer to a monocrystalline layer (5c).
Inventors
- 👤 Junji Sakurai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 03:53
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; C; C30; C30B; C30B13/00; C30B13/16; C30B13/22; C30B13/24; C30B29/00; C30B29/60; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3238; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3458; H10P14/382; H10P34/00; H10P34/40; H10P34/42; H10P34/422; H10P95/00; H10P95/90; Y; Y10; Y10T; Y10T117/00; Y10T117/10; Y10T117/1024; Y10T117/1076; Y10T117/108; Y10T117/1088
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
71 words
A process for producing a monocrystalline layer on an insulator, particularly in a wafer adapted for use in producing large-scale integrated circuits, comprising the steps of: providing a nonmonocrystalline layer on an insulator; and non- heating a region of said mononocrystalline layer by irradiating it from two heat sources while moving said heat sources relative to said nonmonocrystalline layer, thereby locally melting and transforming said nonmonocrystalline layer into a monocrystalline layer.
Claim 2
Dependent Claim
71 words
A process for producing a monocrystalline layer on an insulator, particularly in a wafer adapted for use in producing large-scale integrated circuits, comprising the steps of: providing a nonmonocrystalline layer on an insulator; and non- heating a region of said mononocrystalline layer by irradiating it from two heat sources while moving said heat sources relative to said nonmonocrystalline layer, thereby locally melting and transforming said nonmonocrystalline layer into a monocrystalline layer.
Claim 3
Dependent Claim
20 words
A process according to claim 1, wherein said two heat sources are located at opposite sides of said nonmonocrystalline layer.
Claim 4
Dependent Claim
21 words
A process according to claim 1, wherein said two heat sources are located at the same side of said nonmonocrystalline layer.
Claim 5
Dependent Claim
43 words
A process according to claim 2, wherein the ther- radiation mal density of a beam of heat irradiating said region from a front side of said nonmonocrystalline layer is greater than that irradiating said region from a back side of said nonmonocrystalline layer.
Claim 6
Dependent Claim
68 words
A process according to claim 2,3 or 4, wherein said heat sources are rod-like lamps, such as halogen or inert-gas filled tungsten lamps or mercury discharge lamps, at least one lamp at a front side of said nonmonocrystalline layer being located at a focal line of an ellipse of an elliptical semicylindrical reflective mirror and said irradiated region being located at the other focal line of said ellipse.
Claim 7
Dependent Claim
17 words
or 4, 6. A process according to claim 2, wherein said heat sources are rod-like carbon heaters.
References Cited (Backward Citations)
No citation records indexed.
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