Method of producing soi devices

Abstract

Abstract Disclosed are methods that result in substantial improvement of s ilicon- o n- i nsultator (SOI) device manufacture. We have discovered that carbon can be advantageously used as a wetting agent in the m elting- r ecrystallization (MR) method of producing SOI wafers. We have also found that contacting the wafer (typically subsequent to the formation thereon of a poly-Si layer on a SiO₂ layer but prior to the completion of formation of a SiO₂ cap layer on the poly-Si layer) with an atmosphere that comprises a wetting agent-containing molecular species (e.g., CH₄, NH₃), with the wafer at an appropriate elevated (e.g., 500-900°C) temperature, can reliably result in recrystallized Si films of high quality. Furthermore, we have discovered the existence of a previously unknown parameter regime (low thermal gradient across the resolidification front, typically no more than about 4°C/mm) for the MR process that can result in a highly perfect (χ min of 3%, subboundary spacing of about 50 µm, misalignment across subboundaries of the order of 0.1°) resolidified Si layer. Devices can be fabricated directly in this layer, or the layer can be used as seed substrate for the growth of a "thick" epitaxial Si layer of the type useful for the fabrication of high voltage semiconductor devices.

Inventors

• 👤 Arthur Curtis Adams
• 👤 Loren Neil Pfeiffer
• 👤 Kenneth William West

Bibliographic Details