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EP0251233A1
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Anisotropic rare earth magnet material and production process thereof
Assignee: Japan Science and Technology Agency
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Filing: 1987-06-26
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Granted: —
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Expires: 2007-06-26
Abstract
Abstract An anisotropic rare earth magnet material is provided by a sputtering technique. The material has structural and magnetic anisotropy. Its composition is represented essentially by the following formula: wherein R means at least one of rare earth metal elements of Y and the lanthanide series of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu or a combination of Hf and at least one of the foregoing rare earth metal elements, M denotes Co or a combination of Co and at least one of Fe, Cu, Zr, Ti, Al and B, a is not greaterthan 0.05 (a ≦ 0.05), and b ranges from 0.1 to 0.5 (b = 0.1-0.5).
Inventors
- 👤 Eishu Sugawara
- 👤 Taketoshi Nakayama
- 👤 Tsuyoshi Masumoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 19:14
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/3407; C23C14/3414; H; H01; H01F; H01F1/00; H01F1/01; H01F1/03; H01F1/032; H01F1/04; H01F1/047; H01F1/053; H01F1/055; H01F1/057; H01F41/00; H01F41/14; H01F41/18
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
108 words
An anisotropic rare earth magnet material having structural and magnetic anisotropy and a composition represented essentially by the following formula: wherein R means at least one of rare earth metal elements of Y and the lanthanide series of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu or a combination of Hf and at least one of said rare earth metal elements, M denotes Co or a combination of Co and at least one of Fe, Cu, Zr, Ti, Al and B, a is not greater than 0.05 (a K 0.05), and b ranges from 0.1 to 0.5 (b = 0.1-0.5).
Claim 2
Dependent Claim
108 words
An anisotropic rare earth magnet material having structural and magnetic anisotropy and a composition represented essentially by the following formula: wherein R means at least one of rare earth metal elements of Y and the lanthanide series of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu or a combination of Hf and at least one of said rare earth metal elements, M denotes Co or a combination of Co and at least one of Fe, Cu, Zr, Ti, Al and B, a is not greater than 0.05 (a K 0.05), and b ranges from 0.1 to 0.5 (b = 0.1-0.5).
Claim 3
Dependent Claim
152 words
A process for the production of an anisotropic rare earth magnet material, which comprises: (i) providing in an Ar atmosphere a target having composition represented essentially by the following formula: wherein R means at least one of rare earth metal elements of Y and the lanthanide series of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu or a combination of Hf and at least one of said rare earth metal elements, M denotes Co or a combination of Co and at least one of Fe, Cu, Zr, Ti, Al and B, a is not greater than 0.05 (a i 0.05), and b ranges from 0.1 to 0.5 (b = 0.1-0.5); and (ii) applying an a.c. or d.c. electric field between said target and a substrate in accordance with a sputtering technique, whereby a material having structural and magnetic anisotropy is formed on the substrate.
Claim 4
Dependent Claim
152 words
A process for the production of an anisotropic rare earth magnet material, which comprises: (i) providing in an Ar atmosphere a target having composition represented essentially by the following formula: wherein R means at least one of rare earth metal elements of Y and the lanthanide series of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu or a combination of Hf and at least one of said rare earth metal elements, M denotes Co or a combination of Co and at least one of Fe, Cu, Zr, Ti, Al and B, a is not greater than 0.05 (a i 0.05), and b ranges from 0.1 to 0.5 (b = 0.1-0.5); and (ii) applying an a.c. or d.c. electric field between said target and a substrate in accordance with a sputtering technique, whereby a material having structural and magnetic anisotropy is formed on the substrate.
References Cited (Backward Citations)
DE2142110B2
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