Patent EP0137701A1 successfully refreshed from Google Patents.
EP0137701A1
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Process for fabricating a semiconductor device including a barrier film
Assignee: Fujitsu Ltd
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Filing: 1984-08-30
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Granted: —
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Expires: 2004-08-30
Abstract
Abstract A semiconductor device having contact windows between an aluminium or aluminium-alloy wiring layer (11) and a diffused region (6,7) in a semiconductor substrate (1), includes a barrier film (10) of a refractory metal and silicon between the wiring layer (11) and the diffused region (6, 7). The barrier film (10) prevents an alloy being formed between the layer (11) and the regions (6,7) during a subsequent heat treatment step. The refractory metal and silicon film (10) is beam annealed for a short period of time e.g. 10 seconds or less to ensure complete silicidation so that adverse effects of using a barrier film such as weak-bonded silicon and/or a refractory metal to the aluminium or aluminium-alloy wiring layer (11) are prevented and an excellent electrical or ohmic contact is obtained between the wiring layer (11) and the diffused layer (6, 7).
Inventors
- 👤 Kazunari Shirai
- 👤 Hajime Kamioka
- 👤 Shigeyoshi Koike
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 22:17
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; Y; Y10; Y10S; Y10S148/00; Y10S148/019; Y10S148/09
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
138 words
A process for fabricating a semiconductor device, comprising the steps of: forming a contact window in an insulating layer (9) on a semiconductor substrate (1), depositing a film (10) comprising a refractory metal and silicon on the insulating layer (9) and in the contact window on the semiconductor substrate (1), and depositing an aluminium or aluminium-alloy layer (11) onto the refractory metal and silicon film (10) to establish contact between the aluminium or alluminium-layer (11) and the semiconductor substrate (1) in the contact window, characterised in that the refractory metal and silicon film (10) is beam annealed for a short period of time to ensure silicidation of the film (10) before the aluminium or aluminium-alloy layer (11) is deposited, thereby ensuring an electrical or ohmic contact between the layer (11) and the substrate (1) in the contact window.
Claim 2
Dependent Claim
138 words
A process for fabricating a semiconductor device, comprising the steps of: forming a contact window in an insulating layer (9) on a semiconductor substrate (1), depositing a film (10) comprising a refractory metal and silicon on the insulating layer (9) and in the contact window on the semiconductor substrate (1), and depositing an aluminium or aluminium-alloy layer (11) onto the refractory metal and silicon film (10) to establish contact between the aluminium or alluminium-layer (11) and the semiconductor substrate (1) in the contact window, characterised in that the refractory metal and silicon film (10) is beam annealed for a short period of time to ensure silicidation of the film (10) before the aluminium or aluminium-alloy layer (11) is deposited, thereby ensuring an electrical or ohmic contact between the layer (11) and the substrate (1) in the contact window.
Claim 3
Dependent Claim
15 words
A process according to claim 1, wherein the semiconductor substrate (1) is made of silicon.
Claim 4
Dependent Claim
19 words
A process according to claim 1 or 2, wherein the semiconductor substrate (1) is n-type under the contact window.
Claim 5
Dependent Claim
23 words
A process accodring to claim 1, 2 or 3, wherein the semiconductor substrate (1) has an n-type doped region under the contact window.
Claim 6
Dependent Claim
27 words
A process according to any one of the preceding claims, wherein the contact window has a size smaller than a square measuring 2 um x 2 µm.
Claim 7
Dependent Claim
20 words
A process according to any one of the preceding claims, wherein the refractory metal is Mo, W, Ta or Ti.
Claim 8
Dependent Claim
31 words
A process according to any one of the preceding claims, wherein the deposition of the film (10) comprising a refractory metal and silicon is carried out by co-sputtering or hotpress-target sputtering.
Claim 9
Dependent Claim
35 words
A process according to any one of the preceding claims, wherein the film (10) comprising a refractory metal and silicon is deposited in a thickness in the range of from 10 nm to 50 nm.
Claim 10
Dependent Claim
17 words
A process according to claim 8, wherein the thickness of the film (10) is approximately 30 nm.
Claim 11
Dependent Claim
26 words
A process according to any one of the preceding claims, wherein the beam annealing is carried out by lamp annealing, laser annealing, or electron beam annealing.
Claim 12
Dependent Claim
17 words
A process according to claim 10, wherein the beam annealing is carried out by halogen lamp annealing.
Claim 13
Dependent Claim
46 words
A process according to any one of the preceding claims, wherein the beam annealing of the film (10) comprising a refractory metal and silicon is carried out at a temperature in a range from 700°C to 1100°C for a time period of 60 seconds or less.
Claim 14
Dependent Claim
15 words
A process according to claim 12, wherein the time period is 20 seconds or less.
Claim 15
Dependent Claim
15 words
A process according to claim 12, wherein the time period is 10 seconds or less.
Claim 16
Dependent Claim
15 words
A process according to claim 12, wherein the time period is 5 seconds or less.
Claim 17
Dependent Claim
36 words
A process according to claim 12, wherein the refractory metal is Mo, W, Ta or Ti, and the temperature at which the beam annealing is carried out is in a range of from 900°C to 1050°C.
Claim 18
Dependent Claim
31 words
A process according to claim 12, wherein the refractory metal is Ti and the temperature at which the beam annealing is carried out is in the range from 800°C to 1000°C.
Claim 19
Dependent Claim
30 words
A process according to claim 6 or claim 16, in which the refractory metal is molybdenum and in which the resultant molybdenum silicide consists essentially of MoS i 2 .
Claim 20
Dependent Claim
22 words
A process according to any one of the preceding claims, wherein the aluminium-alloy used in the layer (11) is aluminium-silicon or aluminium-copper.
Claim 21
Dependent Claim
14 words
A process according to claim 19, wherein the aluminium-silicon is a l%-silicon aluminium alloy.
Claim 22
Dependent Claim
34 words
A process according to any one of the preceding claims, further comprising the step of patterning the aluminium or aluminium-alloy layer (11) and the refractory metal silicide film (10) to obtain a wiring pattern.
References Cited (Backward Citations)
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