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EP0094041A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Reduction projection aligner system

Assignee: Hitachi Ltd
•
Filing: 1983-05-05
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Granted: —
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Expires: 2003-05-05
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Abstract

Abstract A reduction projection aligner system wherein a pattern on a reticle (2) is reduced and projected on a wafer (4), and the wafer (4) is exposed to light so as to directly form the pattern thereon; comprising means (3, 7) to optically magnify and project a positioning pattern formed on the wafer (4) and to image it on a plane, slit means (8) mounted on the system proper and located on the imaging plane, stage means (18) to place the wafer (4) thereon and disposed so as to be movable in a predetermined direction, length measuring means (16) to measure a position of the stage (18), and means to detect a relative position between the positioning pattern on the wafer (4) and said slit means (8), whereby the reticle (2) having the pattern to be formed anew is relatively moved and positioned so as to agree with the position of the wafer (4) in said system proper.

Inventors

  • 👤 Shinji Kuniyoshi
  • 👤 Akihiro Takanashi
  • 👤 Sumio Hosaka
  • 👤 Yoshio Kawamura
  • 👤 Toshiei Kurosaki
  • 👤 Tsuneo Terasawa

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-08 16:21
CPC Classifications
G; G03; G03F; G03F9/00; G03F9/70; G03F7/00; G03F7/20

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 123 words
A reduction projection aligner system wherein a pattern (5) on a reticle (2) is reduced and projected on a wafer (4), and the wafer is exposed to light so as to directly form the pattern thereon, characterized by means (3, 7) to optically magnify and project a positioning pattern formed on the wafer and to image it on a plane, slit means (8) mounted on the system proper and located on the imaging plane, stage means (18) to place the wafer thereon and disposed so as to be movable in a predetermined direction, length measuring means (16) to measure a position of the stage, and means (9) to detect a relative position between the positioning pattern on the wafer and said slit means.
Claim 2
Dependent Claim 123 words
A reduction projection aligner system wherein a pattern (5) on a reticle (2) is reduced and projected on a wafer (4), and the wafer is exposed to light so as to directly form the pattern thereon, characterized by means (3, 7) to optically magnify and project a positioning pattern formed on the wafer and to image it on a plane, slit means (8) mounted on the system proper and located on the imaging plane, stage means (18) to place the wafer thereon and disposed so as to be movable in a predetermined direction, length measuring means (16) to measure a position of the stage, and means (9) to detect a relative position between the positioning pattern on the wafer and said slit means.
Claim 3
Dependent Claim 42 words
A reduction projection aligner system according to claim 1, characterized by means to relatively move and position the reticle (2) having the pattern to be formed anew, so as to agree with the position of the wafer (4) in said system proper.
Claim 4
Dependent Claim 56 words
A reduction projection aligner system according to claim 1 or 2, characterized in that the detection means (9) is so constructed as to detect a relative position between the slit (8) and the positioning pattern of the wafer (4) by photoelectrically converting a brightness of slit passing light in accordance with the movement of the wafer.
Claim 5
Dependent Claim 27 words
A reduction projection aligner system according to at least one of claims 1 to 3 characterized in that said length measuring means comprises a laser interferometer (16).

References Cited (Backward Citations)

US3943359A Cited
US4153371A Cited
DE2651430B2 Cited
US4172664A Cited
EP0019941A1 Cited

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