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EP0019941A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Reduction projection aligner system

Assignee: Hitachi Ltd
•
Filing: 1980-06-04
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Granted: —
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Expires: 2000-06-04
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Abstract

Abstract A reduction projection aligner system wherein a pattern on a reticle (2') is formed directly on a wafer (4) by reducing, projecting and printing it, includes means (9) to optically magnify and project and then focus a positioning pattern on the wafer (4), means (11, 12) to scan the focused plane with a slit (10), means (13) to measure a distance from a mechanical origin provided on the body of the system to the positioning pattern on the wafer (4) on the basis of a movement of the slit (10), and means to relatively move and position the reticle (2') having the pattern to be formed anew, so as to coincide with a position of the wafer (4) relative to the body of the system.

Inventors

  • 👤 Shinji Kuniyoshi
  • 👤 Akihiro Takanashi
  • 👤 Toshiei Kurosaki

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-08 16:34
CPC Classifications
G; G03; G03F; G03F9/00; G03F9/70; H; H10; H10P; H10P95/00

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 126 words
A reduction projection aligner system wherein a pattern on a reticle (2') is formed directly on a wafer (4) by reducing, projecting and printing it, characterized by means (9) to optically magnify and project and then focus a positioning pattern (31) on the wafer, means (11, 12) to scan the focused plane with a slit (10), means (13) to measure a distance from a mechanical origin provided on a body of said system to said positioning.pattern (31) on said wafer (4) on the basis of a movement of said slit (10), and means to relatively move and position the reticle (2') having the pattern to be formed anew, so as to coincide with a position of said wafer (4) relative to said body of said system.
Claim 2
Dependent Claim 126 words
A reduction projection aligner system wherein a pattern on a reticle (2') is formed directly on a wafer (4) by reducing, projecting and printing it, characterized by means (9) to optically magnify and project and then focus a positioning pattern (31) on the wafer, means (11, 12) to scan the focused plane with a slit (10), means (13) to measure a distance from a mechanical origin provided on a body of said system to said positioning.pattern (31) on said wafer (4) on the basis of a movement of said slit (10), and means to relatively move and position the reticle (2') having the pattern to be formed anew, so as to coincide with a position of said wafer (4) relative to said body of said system.
Claim 3
Dependent Claim 28 words
The reduction projection aligner system of claim 1, characterized in that the focusing means is constructed of an optical system (9) which includes a single light guide (7).
Claim 4
Dependent Claim 65 words
The reduction projection aligner system of claim 1 or 2, characterized in that the distance measuring (13) means is constructed to as to photoelectrically convert an intensitiy of light passing through said slit (10) in accordance with the movement of said slit (10), thereby to measure the distance from the mechanical origin of said slit (10) to said positioning pattern (31) on said wafer (4).
Claim 5
Dependent Claim 71 words
The reduction projection aligner system of claim 1 or 2, characterized in that the distance measuring means (13) is constructed so as to measure the distance from the origin of said slit (10) to said positioning pattern (31) on said wafer (4) by the use of an origin sensor (16) which is disposed on said body of said reduction projection aligner system and within the movable range of said slit (10).

References Cited (Backward Citations)

US3796497A Cited
US3943359A Cited
FR2296215A1 Cited

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