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EP0081633A1
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EP
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A method of forming a patterned photoresist layer
Assignee: International Business Machines Corp
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Filing: 1982-09-08
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Granted: —
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Expires: 2002-09-08
Abstract
Abstract A photoresist that has strong resistance to reactive ion etching, high photosensitivity to mid and deep UV-light, and high resolution capability is formed by using as the resist material a copolymer of methacrylonitrile and methacrylic acid, and by baking the resist in two stages, one before the exposure to light for improved photosensitivity, and one after exposure to light, development, and prior to treatment with reactive ion etching.
Inventors
- 👤 Joachim Bargon
- 👤 Hiroyuki Hiraoka
- 👤 Lawrence William Welsh, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 00:19
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/40
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
50 words
A method of forming a patterned photoresist by pattern-wise exposing a layer of resist material to light, characterised in that the method comprises employing as the resist a copolymer of methacrylonitrile and methacrylic acid and baking the resist in two stages, one before and one after the exposure to light.
Claim 2
Independent Claim
50 words
A method of forming a patterned photoresist by pattern-wise exposing a layer of resist material to light, characterised in that the method comprises employing as the resist a copolymer of methacrylonitrile and methacrylic acid and baking the resist in two stages, one before and one after the exposure to light.
Claim 3
Dependent Claim
44 words
A method as claimed in claim 1, in which the first baking is at a temperature of from 120°C to 140°C for 10 to 30 minutes, and the second baking is at a temperature of from 140°C to 150°C for 10 to 30 minutes.
Claim 4
Dependent Claim
27 words
A method as claimed in claim 1 or 2, in which a positive resist is obtained by pattern-wise exposure of the resist to deep ultra violet radiation.
Claim 5
Dependent Claim
30 words
A method as claimed in claim 1 or 2, in which a negative resist is obtained by pattern-wise exposure of the resist to light of wavelength 300 nm or longer.
Claim 6
Independent Claim
23 words
A method as claimed in anyone of the preceding claims, in which the resist has been sensitized by the presence of an additive.
References Cited (Backward Citations)
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Cited
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Cited
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Cited
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