Semiconductor device

Claim 2

A semiconductor device comprising: a multi-level wiring structure including: a first wiring layer disposed at a first wiring level of the multi-level wiring structure; a plurality of first dummy patterns disposed over and covering the first wiring layer, each first dummy pattern of the plurality of first dummy patterns comprising a size which is substantially less than a size of the first wiring layer, and the plurality of first dummy patterns being disposed at a second wiring level of the multi-level wiring structure, the second wiring level being above the first wiring level; and a first mark disposed over the first wiring layer, the first mark being disposed at a third wiring level of the multi-level wiring structure, the third wiring level being above the second wiring level.

Claim 3

The semiconductor device according to claim 1 , further comprising: a semiconductor substrate on which the multi-level wiring structure being disposed; and a first penetration electrode that penetrates the semiconductor substrate, and that is in contact with the first wiring layer at one end thereof.

Claim 4

The semiconductor device according to claim 2 , further comprising: a second mark disposed at the other end of the first penetration electrode.

Claim 5

The semiconductor device according to claim 1 , wherein the plurality of first patterns is electrically floated.

Claim 6

The semiconductor device according to claim 1 , wherein the plurality of first patterns is positioned in a region that is vertically arranged with the first mark.

Claim 7

The semiconductor device according to claim 1 , wherein the multi-level wiring structure further comprises: a plurality of second patterns disposed over the first wiring layer, the plurality of second patterns being disposed at a fourth wiring level of the multi-level wiring structure, the fourth wiring level being between the second wiring level and the third wiring level.

Claim 8

The semiconductor device according to claim 6 , wherein each of the plurality of second patterns is larger in size than each of the plurality of first patterns.

Claim 9

The semiconductor device according to claim 2 , further comprising: a plurality of second penetration electrodes each penetrating through the semiconductor substrate; and a plurality of terminals, each of the terminals being formed over the multi-level wiring structure, each of the terminals being coupled to an associated one of the plurality of second penetration electrodes, wherein the first penetration electrode is free from being coupled to any one of the terminals.

Claim 10

The semiconductor device according to claim 8 , further comprising: a plurality of third patterns each being disposed at the third level of the multi-level wiring structure and being coupled between an associated one of the second penetration electrodes and an associated one of the terminals, each of the third patterns being different in shape from the first mark.

Claim 11

A semiconductor device comprising: a multi-level wiring structure including: a plurality of dummy patterns disposed over and covering a first wiring level of the multi-level wiring structure, each dummy pattern of the plurality of dummy patterns comprising a size which is substantially less than a size of the first wiring layer; and a first mark disposed at a second wiring level of the multi-level wiring structure, the second wiring level being above the first wiring level; and a resin layer disposed over the multi-level wiring structure, the resin layer having an opening that is positioned over the first mark and at least one of the plurality of dummy patterns.

Claim 12

A semiconductor device comprising: a multi-level wiring structure including: a plurality of dummy patterns disposed over and covering a first wiring level of the multi-level wiring structure, each dummy pattern of the plurality of dummy patterns comprising a size which is substantially less than a size of the first wiring layer; and a first mark disposed at a second wiring level of the multi-level wiring structure, the second wiring level being above the first wiring level; and a resin layer disposed over the multi-level wiring structure, the resin layer having an opening that is positioned over the first mark and at least one of the plurality of dummy patterns.

Claim 13

The semiconductor device according to claim 10 , further comprising: a semiconductor substrate on which the multi-level wiring structure is disposed; a penetration electrode that penetrates the semiconductor substrate; and a second mark coupled to the penetration electrode.

Claim 14

The semiconductor device according to claim 10 , wherein the multi-level wiring structure further includes: a third wiring layer disposed under the first wiring layer, the third wiring layer being disposed at a third wiring level below the first wiring level, and wherein the penetration electrode extends to the third wiring layer.

Claim 15

The semiconductor device according to claim 10 , wherein the plurality of patterns is electrically floated.

Claim 16

A semiconductor device comprising: a multi-level wiring structure including a first wiring level, a first level wiring layer formed in the first wiring level, and a second level wiring layer formed over the first level wiring layer; a plurality of dummy patterns disposed over and covering the first wiring level, each dummy pattern of the plurality of dummy patterns comprising a size which is substantially less than a size of the first level wiring layer; an insulation layer formed over the multi-level wiring structure and including a plurality of first openings and a second opening; a plurality of bump electrodes each disposed in an associated one of the first openings; a plurality of first wirings produced as the second level wiring layer, each of the first wirings being vertically arranged with an associated one of the first openings of the insulation layer, and each of the first wirings being coupled to an associated one of the bump electrodes; a second wiring produced as the second level wiring layer and vertically arranged with the second opening of the insulation layer, and the second wiring being free from a contact with any one of the bump electrodes; and a plurality of third wirings produced as the first wiring layer and disposed in a first region that is vertically arranged with the first opening of the insulation layer.

Claim 17

A semiconductor device comprising: a multi-level wiring structure including a first wiring level, a first level wiring layer formed in the first wiring level, and a second level wiring layer formed over the first level wiring layer; a plurality of dummy patterns disposed over and covering the first wiring level, each dummy pattern of the plurality of dummy patterns comprising a size which is substantially less than a size of the first level wiring layer; an insulation layer formed over the multi-level wiring structure and including a plurality of first openings and a second opening; a plurality of bump electrodes each disposed in an associated one of the first openings; a plurality of first wirings produced as the second level wiring layer, each of the first wirings being vertically arranged with an associated one of the first openings of the insulation layer, and each of the first wirings being coupled to an associated one of the bump electrodes; a second wiring produced as the second level wiring layer and vertically arranged with the second opening of the insulation layer, and the second wiring being free from a contact with any one of the bump electrodes; and a plurality of third wirings produced as the first wiring layer and disposed in a first region that is vertically arranged with the first opening of the insulation layer.

Claim 18

The semiconductor device as claimed in claim 14 , wherein the multi-level wiring structure further includes a third level wiring layer, and the first level wiring layer formed over the third level wiring layer, and the semiconductor device further comprises; a plurality of fourth wirings each produced as the third level wiring layer and vertically arranged with a corresponding one of the first wirings, a fifth wiring produced as the third level wiring layer and vertically arranged with the second wiring.

Claim 19

The semiconductor device as claimed in claim 15 , further comprising: a semiconductor substrate on which the multi-level wiring structure is formed, a plurality of first penetrating electrodes penetrating through the semiconductor substrate, each of the first penetrating electrodes extending to reach a corresponding one of the fourth wirings, and a second penetrating electrode penetrating through the semiconductor substrate and extending to reach the fifth wiring.

Claim 20

The semiconductor device as claimed in claim 15 , wherein the multi-level wiring structure further includes a fourth level wiring layer intervened between the first and the third level wiring layers, the device further comprises, a plurality of sixth wirings produced as the fourth level wiring layer and disposed in a second region that vertically arranged with the first region.

Claim 21

The semiconductor device as claimed in claim 17 , wherein each of the sixth wirings is smaller in size than each of the third wirings.

Claim 22

The semiconductor device as claimed in claim 15 , wherein each of the fourth wirings is electrically connected to the corresponding one of the first wirings, and the fifth wiring is electrically disconnected from the second wiring.

Claim 23

The semiconductor device as claimed in claim 14 , wherein each of the third wirings is electrically floated.