US7601996B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and manufacturing method thereof
Assignee: Fujitsu Semiconductor Ltd
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Filing: 2006-05-23
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Granted: 2009-10-13
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Expires: 2026-05-23
Abstract
Abstract A semiconductor device comprises a field-effect transistor arranged in a semiconductor substrate, which transistor has a gate electrode, source/drain impurity diffusion regions, and carbon layers surrounding the source/drain impurity diffusion regions. Each of the carbon layers is provided at an associated of the source/drain impurity diffusion regions and positioned so as to be offset from the front edge of a source/drain extension in direction away from the gate electrode and to surround as profile the associated source/drain impurity diffusion region.
Inventors
- 👤 Hiroyuki Ohta
- 👤 Kenichi Okabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 15:40
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10D; H10D30/00; H10D30/60; H10D30/601; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/357; H10D62/364; H10D62/371; H10D64/00; H10D64/01; H10D64/021; H10P30/202; H10P30/204; H10P30/208; H10P30/222; H10D30/01; H10D30/021; H10D30/0212; H10D30/0223; H10D30/0227
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
86 words
A semiconductor device including a field-effect transistor arranged in a semiconductor substrate, the transistor comprising: a gate electrode; a source/drain extension region in the semiconductor substrate; a source/drain impurity diffusion region in the semiconductor substrate deeper than the source/drain extension region; a carbon layer surrounding the source/drain impurity diffusion region; and a pocket region located below the source/drain extension region, wherein the carbon layer is offset from front edges of the source/drain extension region and the pocket region in the direction away from the gate electrode.
Claim 2
Dependent Claim
86 words
A semiconductor device including a field-effect transistor arranged in a semiconductor substrate, the transistor comprising: a gate electrode; a source/drain extension region in the semiconductor substrate; a source/drain impurity diffusion region in the semiconductor substrate deeper than the source/drain extension region; a carbon layer surrounding the source/drain impurity diffusion region; and a pocket region located below the source/drain extension region, wherein the carbon layer is offset from front edges of the source/drain extension region and the pocket region in the direction away from the gate electrode.
Claim 3
Dependent Claim
33 words
The semiconductor device according to claim 1 , wherein the source/drain impurity diffusion region is offset from a channel-side boundary of the carbon layer so as to be away from the gate electrode.
Claim 4
Dependent Claim
28 words
The semiconductor device according to claim 1 , wherein the carbon layer is positioned deeper in the semiconductor substrate than a bottom of the source/drain impurity diffusion region.
Claim 5
Dependent Claim
59 words
The semiconductor device according to claim 1 , further comprising: a first sidewall spacer provided on a side face of the gate electrode; and a second sidewall spacer covering the first sidewall spacer; wherein the channel-side boundary of the carbon layer aligns with the first sidewall spacer, and the source/drain impurity diffusion region aligns with the second sidewall spacer.
Claim 6
Dependent Claim
23 words
The semiconductor device according to claim 1 , wherein at least a part of the source/drain extension region extends outside the carbon layer.
References Cited (Backward Citations)
US6153920A
Cited
US20050095765A1
Cited
JP2005136351A
Cited
US7122435B2
Cited
US20060134872A1
Cited
US20060216900A1
Cited
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