US6153920A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for controlling dopant diffusion in a semiconductor layer and semiconductor device formed thereby
Assignee: Nokia of America Corp
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Filing: 1998-01-30
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Granted: 2000-11-28
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Expires: 2018-01-30
Abstract
Abstract A semiconductor device having a carbon-containing region with an advantageous concentration profile is disclosed. The carbon is introduced into a region of the substrate and at a depth below the space-charge layer of the device and at a concentration such that the carbon atoms absorb point defects created in the substrate during device fabrication but do not adversely affect the leakage characteristics of the device.
Inventors
- 👤 Hans-Joachim Ludwig Gossmann
- 👤 Conor Stefan Rafferty
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 11:14
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6741; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D62/17; H10D62/351; H10D62/357; H10D62/364; H10D62/80; H10D62/83; H10D62/834; H10P30/202; H10P30/206; H10P30/28; H10P32/00
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
134 words
A semiconductor device comprising source and drain regions formed in a semiconductor substrate and a gate formed on the semiconductor substrate between the source and drain regions, wherein the source and drain regions have associated therewith a charge separation layer, wherein the semiconductor substrate has a region that contains carbon atoms in a concentration of at least 5×10 18 /cm 3 at a depth in the substrate that does not exceed about four times the depth of the source and drain regions in the substrate and wherein the concentration of the carbon does not exceed about 1×10 18 /cm 3 in the source region, the drain region, and the space charge region of the device and wherein the carbon-containing region underlies the source region, the drain region and the gate region of the device.
Claim 2
Dependent Claim
134 words
A semiconductor device comprising source and drain regions formed in a semiconductor substrate and a gate formed on the semiconductor substrate between the source and drain regions, wherein the source and drain regions have associated therewith a charge separation layer, wherein the semiconductor substrate has a region that contains carbon atoms in a concentration of at least 5×10 18 /cm 3 at a depth in the substrate that does not exceed about four times the depth of the source and drain regions in the substrate and wherein the concentration of the carbon does not exceed about 1×10 18 /cm 3 in the source region, the drain region, and the space charge region of the device and wherein the carbon-containing region underlies the source region, the drain region and the gate region of the device.
Claim 3
Dependent Claim
26 words
The semiconductor device of claim 1 wherein the device is selected from the group consisting of an MOS device, a thin-film device, and a heterojunction device.
Claim 4
Dependent Claim
20 words
The semiconductor device of claim 2 wherein the semiconductor substrate is selected from the group consisting of silicon, and silicon-germanium.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-28 | 2004-05-29 | 2004-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-28 | 2008-05-29 | 2008-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-28 | 2012-05-29 | 2012-11-28 | $7700.00 | Window Closed / Lapsed |