US7541626B2
Expired / Lapsed
US
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High K-gate oxide TFTs built on transparent glass or transparent flexible polymer substrate
Assignee: Massachusetts Institute of Technology
•
Filing: 2006-03-28
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Granted: 2009-06-02
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Expires: 2026-03-28
Abstract
Abstract A transparent thin film transistor device includes a transparent substrate, and a high dielectric constant insulator layer disposed over the transparent substrate at a defined temperature. A transparent semiconductor layer is disposed over the insulator layer.
Inventors
- 👤 Il-Doo Kim
- 👤 Harry L. Tuller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:58
CPC Classifications
C; C04; C04B; C04B35/00; C04B35/01; C04B35/495; H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; H10D30/674; H10D30/675; H10D30/6755; H10D30/6758; H10D99/00; C04B2235/00; C04B2235/02; C04B2235/30; C04B2235/32; C04B2235/3231; C04B2235/3251; C04B2235/3284; C04B2235/3294; C04B2235/3298; C04B2235/70; C04B2235/74; C04B2235/76; C04B2235/96; C04B2235/9646; C04B2235/9653
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
113 words
A transparent thin film transistor device comprising: a transparent substrate; a high dielectric constant insulator layer disposed over the transparent substrate at a defined temperature, said high dielectric constant insulator layer comprises at least one material selected from the group consisting of Bi 2 (Zn 1/3 Nb 2/3 ) 2 O 7 , Bi 1.5 Zn 1.0 M 1.5 O 7 (M=Nb, Ta, Sb), (Bi) 1˜2 (Zn, Nb, Ta, Ti) 2 O 7 , (Ca, Ba, Sr, Pb) 1˜2 (Zn, Nb, Ta, Ti, Zr) 2 O 7 , and (Ca 1-x Sr x )Bi 4 Ti 4 O 15 ; and a transparent semiconductor layer disposed over the high dielectric constant insulator layer.
Claim 2
Dependent Claim
113 words
A transparent thin film transistor device comprising: a transparent substrate; a high dielectric constant insulator layer disposed over the transparent substrate at a defined temperature, said high dielectric constant insulator layer comprises at least one material selected from the group consisting of Bi 2 (Zn 1/3 Nb 2/3 ) 2 O 7 , Bi 1.5 Zn 1.0 M 1.5 O 7 (M=Nb, Ta, Sb), (Bi) 1˜2 (Zn, Nb, Ta, Ti) 2 O 7 , (Ca, Ba, Sr, Pb) 1˜2 (Zn, Nb, Ta, Ti, Zr) 2 O 7 , and (Ca 1-x Sr x )Bi 4 Ti 4 O 15 ; and a transparent semiconductor layer disposed over the high dielectric constant insulator layer.
Claim 3
Dependent Claim
18 words
The transistor device of claim 1 , wherein the transparent substrate comprises glass, PET, PEN, PES, or Polyimide.
Claim 4
Dependent Claim
38 words
The transistor device of claim 1 , wherein the high dielectric constant insulator layer is formed at least one process selected from the group consisting of sputtering, pulsed laser deposition, evaporation, chemical vapor deposition, and atomic layer deposition.
Claim 5
Dependent Claim
19 words
The transistor device of claim 1 , wherein the high dielectric constant insulator layer is deposited at room temperature.
Claim 6
Dependent Claim
20 words
The transistor device of claim 1 , wherein the high dielectric constant insulator layer is obtained below 300° C. deposition.
Claim 7
Dependent Claim
28 words
The transistor device of claim 1 , wherein the high dielectric constant insulator layer is annealed in air or oxygen atmosphere below 300° C. following room temperature deposition.
Claim 8
Dependent Claim
23 words
The transistor device of claim 1 , wherein the high dielectric constant insulator layer comprises a thickness no greater than approximately 2000 nm.
Claim 9
Dependent Claim
21 words
The transistor device of claim 1 , wherein the high dielectric constant insulator layer comprises an amorphous or a nanocrystalline structure.
Claim 10
Dependent Claim
22 words
The transistor device of claim 1 , wherein the high dielectric constant insulator layer comprises a high optical transmittance greater than 80%.
Claim 11
Dependent Claim
22 words
The transistor device of claim 1 , wherein the high dielectric constant insulator layer comprises a capacitor structure for flexible embedded capacitor.
Claim 12
Dependent Claim
38 words
The transistor device of claim 1 , wherein the transparent semiconductor layer comprises wide band gap oxide semiconductor where at least one material selected from the group consisting of ZnO, SnO2, In doped ZnO, and Ga doped ZnO.
Claim 13
Dependent Claim
17 words
The method of claim 1 , wherein the transparent substrate comprises glass, PET, PEN, PES, or Polyimide.
Claim 14
Independent Claim
120 words
A method of developing a transparent thin film transistor device comprising: providing a transparent substrate; forming a high dielectric constant insulator layer disposed over the transparent substrate at a defined temperature, said high dielectric constant insulator layer comprises at least one material selected from the group consisting of Bi 2 (Zn 1/3 Nb 2/3 ) 2 O 7 , Bi 1.5 Zn 1.0 M 1.5 O 7 (M=Nb, Ta, Sb), (Bi) 1˜2 (Zn, Nb, Ta, Ti) 2 O 7 , (Ca, Ba, Sr, Pb) 1˜2 (Zn, Nb, Ta, Ti, Zr) 2 O 7 , and (Ca 1-x Sr x )Bi 4 Ti 4 O 15 ; and forming a transparent semiconductor layer disposed over the high dielectric constant insulator layer.
Claim 15
Independent Claim
120 words
A method of developing a transparent thin film transistor device comprising: providing a transparent substrate; forming a high dielectric constant insulator layer disposed over the transparent substrate at a defined temperature, said high dielectric constant insulator layer comprises at least one material selected from the group consisting of Bi 2 (Zn 1/3 Nb 2/3 ) 2 O 7 , Bi 1.5 Zn 1.0 M 1.5 O 7 (M=Nb, Ta, Sb), (Bi) 1˜2 (Zn, Nb, Ta, Ti) 2 O 7 , (Ca, Ba, Sr, Pb) 1˜2 (Zn, Nb, Ta, Ti, Zr) 2 O 7 , and (Ca 1-x Sr x )Bi 4 Ti 4 O 15 ; and forming a transparent semiconductor layer disposed over the high dielectric constant insulator layer.
Claim 16
Dependent Claim
37 words
The method of claim 13 , wherein the high dielectric constant insulator layer is formed at least one process selected from the group consisting of sputtering, pulsed laser deposition, evaporation, chemical vapor deposition, and atomic layer deposition.
Claim 17
Dependent Claim
18 words
The method of claim 13 , wherein the high dielectric constant insulator layer is deposited at room temperature.
Claim 18
Dependent Claim
19 words
The method of claim 13 , wherein the high dielectric constant insulator layer is obtained below 300° C. deposition.
Claim 19
Dependent Claim
27 words
The method of claim 13 , wherein the high dielectric constant insulator layer is annealed in air or oxygen atmosphere below 300° C. following room temperature deposition.
Claim 20
Dependent Claim
22 words
The method of claim 13 , wherein the high dielectric constant insulator layer comprises a thickness no greater than approximately 2000 nm.
Claim 21
Dependent Claim
20 words
The method of claim 13 , wherein the high dielectric constant insulator layer comprises an amorphous or a nanocrystalline structure.
Claim 22
Dependent Claim
21 words
The method of claim 13 , wherein the high dielectric constant insulator layer comprises a high optical transmittance greater than 80%.
Claim 23
Dependent Claim
21 words
The method of claim 13 , wherein the high dielectric constant insulator layer comprises a capacitor structure for flexible embedded capacitor.
Claim 24
Dependent Claim
35 words
The method of claim 13 , wherein the transparent semiconductor comprises wide band gap oxide semiconductor where at least one material selected from the group consisting ZnO, SnO2, In doped ZnO, and Ga doped ZnO.
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