US6358378B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating ZnO thin film for ultraviolet detection and emission source operated at room temperature, and apparatus therefor
Assignee: Korea Institute of Science and Technology
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Filing: 2001-01-24
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Granted: 2002-03-19
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Expires: 2021-01-24
Abstract
Abstract An economical method of fabricating a high quality ZnO thin film with only NBE and without any deep-level emission at room temperature in order to replace conventional III-V group compounds such as GaN, and an apparatus therefor. The method comprises the steps of introducing argon (Ar) and oxygen (O 2 ) into a vacuum chamber while maintaining a vacuum level of 1-100 mTorr in the vacuum chamber, preheating a substrate, depositing a ZnO monocrystal thin film on the substrate by RF magnetron sputtering while introducing carbon(C) or nitrogen (N) atoms from an atomic radical source installed over the substrate, and slowly cooling the substrate while maintaining a partial pressure of oxygen in the vacuum chamber at a partial pressure level used while depositing the ZnO thin film.
Inventors
- 👤 Won Kook Choi
- 👤 Hyung Jin Jung
- 👤 Kyeong Kook Kim
- 👤 Young Soo Yoon
- 👤 Jong Han Song
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:39
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/0021; C23C14/0036; C23C14/0047; C23C14/06; C23C14/08; C23C14/086; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/16
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
109 words
A method of fabricating a ZnO thin film for use in ultraviolet detection and emission devices, the method comprising the steps of: introducing argon (Ar) and oxygen (O 2 ) into a vacuum chamber while maintaining a vacuum level of 1-100 mTorr in the vacuum chamber; preheating a substrate; depositing a ZnO monocrystal thin film on the substrate by RF magnetron sputtering while introducing carbon (C) or nitrogen (N) atoms from an atomic radical source installed over the substrate for p-type doping; and cooling the substrate while maintaining a partial pressure of oxygen in the vacuum chamber at a partial pressure level used while depositing the ZnO thin film.
Claim 2
Independent Claim
109 words
A method of fabricating a ZnO thin film for use in ultraviolet detection and emission devices, the method comprising the steps of: introducing argon (Ar) and oxygen (O 2 ) into a vacuum chamber while maintaining a vacuum level of 1-100 mTorr in the vacuum chamber; preheating a substrate; depositing a ZnO monocrystal thin film on the substrate by RF magnetron sputtering while introducing carbon (C) or nitrogen (N) atoms from an atomic radical source installed over the substrate for p-type doping; and cooling the substrate while maintaining a partial pressure of oxygen in the vacuum chamber at a partial pressure level used while depositing the ZnO thin film.
Claim 3
Dependent Claim
37 words
The method of fabricating a ZnO thin film for use in ultraviolet detection and emission devices as claimed in claim 1 , wherein a ratio of argon (Ar) to oxygen (O 2 ) is less than 4/1.
Claim 4
Dependent Claim
37 words
The method of fabricating a ZnO thin film for use in ultraviolet detection and emission devices as claimed in claim 2 , wherein the ratio of argon (Ar) to oxygen (O 2 ) is 1/1 to 3/1.
Claim 5
Dependent Claim
34 words
The method of fabricating a ZnO thin film for use in ultraviolet detection and emission devices as claimed in claim 1 , wherein the substrate is preheated to a temperature range of 500-650° C.
Claim 6
Dependent Claim
43 words
The method of fabricating a ZnO thin film for use in ultraviolet detection and emission devices as claimed in claim 1 , wherein an energy density per unit effective area applied to a target is 3.9-7.4 W/cm 2 during the RF magnetron sputtering.
Claim 7
Independent Claim
56 words
The method of fabricating a ZnO thin film for use in ultraviolet detection and emission devices as claimed in any one of claims 1 - 4 , wherein the substrate is one selected from the group consisting of Al 2 O 3 monocrystal substrate, Si monocrystal substrate, and a substrate using the ZnO as a buffer.
Claim 8
Dependent Claim
39 words
A RF magnetron sputtering apparatus for fabricating ZnO thin films used in ultraviolet detection and emission devices, wherein a target and a substrate are horizontally arranged and an atomic radical source is installed over the substrate for p-type doping.
Claim 9
Dependent Claim
39 words
A RF magnetron sputtering apparatus for fabricating ZnO thin films used in ultraviolet detection and emission devices, wherein a target and a substrate are horizontally arranged and an atomic radical source is installed over the substrate for p-type doping.
Claim 10
Independent Claim
59 words
A method of fabricating a ZnO thin film for use in ultraviolet detection and emission devices, the method comprising the steps of: preheating a substrate; and depositing a ZnO monocrystal thin film on the substrate by RF magnetron sputtering while introducing carbon (C) or nitrogen (N) atoms from an atomic radical source installed over the substrate for p-type doping.
Claim 11
Independent Claim
59 words
A method of fabricating a ZnO thin film for use in ultraviolet detection and emission devices, the method comprising the steps of: preheating a substrate; and depositing a ZnO monocrystal thin film on the substrate by RF magnetron sputtering while introducing carbon (C) or nitrogen (N) atoms from an atomic radical source installed over the substrate for p-type doping.
Claim 12
Independent Claim
85 words
A method of fabricating a ZnO thin film for use in ultraviolet detection and emission devices, the method comprising the steps of: preheating a substrate; depositing a ZnO monocrystal thin film on the substrate by RF magnetron sputtering while introducing carbon (C) or nitrogen (N) atoms from an atomic radical source installed over the substrate for p-type doping; and cooling the substrate while maintaining a partial pressure of oxygen in the vacuum chamber at a partial pressure level used while depositing the ZnO thin film.
Claim 13
Independent Claim
85 words
A method of fabricating a ZnO thin film for use in ultraviolet detection and emission devices, the method comprising the steps of: preheating a substrate; depositing a ZnO monocrystal thin film on the substrate by RF magnetron sputtering while introducing carbon (C) or nitrogen (N) atoms from an atomic radical source installed over the substrate for p-type doping; and cooling the substrate while maintaining a partial pressure of oxygen in the vacuum chamber at a partial pressure level used while depositing the ZnO thin film.
References Cited (Backward Citations)
US4888062A
Cited
US5514485A
Cited
US5545443A
Cited
US5578501A
Cited
US5569548A
Cited
US5942090A
Cited
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| 3.5 Years (Year 4) | 2005-03-18 | 2005-09-17 | 2006-03-19 | $2000.00 | Window Closed / Lapsed |
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