Pattern decomposition and optical proximity correction method for double exposure when forming photomasks

Claim 2

A pattern decomposition and optical proximity correction method for double exposure when forming photomasks, comprising: defining first exposure patterns by separating patterns requiring the double exposure from target patterns depending on the resolution of an exposing apparatus; defining second exposure patterns by performing a logic operation on the target patterns and the first exposure patterns; comparing the first and second exposure patterns with the target patterns by performing a logic operation on the first and second exposure patterns; performing optical proximity correction on the first exposure patterns to form fourth exposure patterns; performing optical proximity correction on the second exposure patterns to form fifth exposure patterns; and comparing the fourth and fifth exposure patterns with the target patterns by performing a logic operation on the fourth and fifth exposure patterns.

Claim 3

The method according to claim 1 , wherein defining the first exposure pattern comprises: identifying fine patterns having a pitch smaller than the resolution of the exposing apparatus; selecting a predetermined pattern among the identified fine patterns; and selecting other patterns that are separated at least a predetermined distance from the predetermined pattern to define the first exposure patterns.

Claim 4

The method according to claim 2 , wherein the other patterns selected as the first exposure patterns are separated from each other by a distance of at least four times the width of each of the other patterns.

Claim 5

The method according to claim 1 , wherein defining the second exposure patterns comprises performing a logical disjunction (OR) operation on the target patterns and the first exposure patterns.

Claim 6

The method according to claim 1 , wherein comparing the first and second exposure patterns with the target patterns comprises: performing a logical exclusive disjunction (XOR) operation on the first and second exposure patterns to form third exposure patterns; and comparing the third exposure patterns with the target patterns.

Claim 7

The method according to claim 1 , wherein the optical proximity correction on the second exposure patterns is performed in consideration of overlap between the second exposure patterns and the fourth exposure patterns.

Claim 8

The method according to claim 6 , further comprising: performing contour simulation on the fourth exposure patterns between formation of the fourth exposure patterns and formation of the fifth exposure patterns.

Claim 9

The method according to claim 1 , wherein comparing the fourth and fifth exposure patterns with the target patterns comprises: performing a logical exclusive disjunction (XOR) operation on the fourth and fifth exposure patterns to form sixth exposure patterns; and confirming whether or not the sixth exposure patterns are within an allowable range of error by comparing the sixth exposure patterns with the target patterns.

Claim 10

The method according to claim 8 , further comprising: performing contour simulation on each of the fourth and fifth exposure patterns before performing the logical exclusive disjunction (XOR) operation on the fourth and fifth exposure patterns.

Claim 11

A pattern decomposition and optical proximity correction method for double exposure when forming photomasks, comprising: defining first exposure patterns by separating patterns requiring the double exposure from target patterns depending on the resolution of an exposing apparatus; defining second exposure patterns by performing a logical operation on the target patterns and the first exposure patterns; comparing the first and second exposure patterns with the target patterns by performing a logical operation on the first and second exposure patterns; performing optical proximity correction on the first exposure patterns to form fourth exposure patterns; performing contour simulation on the fourth exposure patterns; merging the second exposure patterns with the fourth contour-simulated exposure patterns to form merged patterns; performing the optical proximity correction on the second exposure patterns to form fifth exposure patterns in consideration of overlap between the second exposure patterns and the merged patterns; performing the contour simulation on the fifth exposure patterns; and comparing the fourth and fifth exposure patterns with the target patterns by performing a logical operation on the fourth and fifth contour-simulated exposure patterns.

Claim 12

A pattern decomposition and optical proximity correction method for double exposure when forming photomasks, comprising: defining first exposure patterns by separating patterns requiring the double exposure from target patterns depending on the resolution of an exposing apparatus; defining second exposure patterns by performing a logical operation on the target patterns and the first exposure patterns; comparing the first and second exposure patterns with the target patterns by performing a logical operation on the first and second exposure patterns; performing optical proximity correction on the first exposure patterns to form fourth exposure patterns; performing contour simulation on the fourth exposure patterns; merging the second exposure patterns with the fourth contour-simulated exposure patterns to form merged patterns; performing the optical proximity correction on the second exposure patterns to form fifth exposure patterns in consideration of overlap between the second exposure patterns and the merged patterns; performing the contour simulation on the fifth exposure patterns; and comparing the fourth and fifth exposure patterns with the target patterns by performing a logical operation on the fourth and fifth contour-simulated exposure patterns.

Claim 13

The method according to claim 10 , wherein defining the first exposure patterns comprises: identifying fine patterns having a pitch smaller than the resolution of the exposing apparatus; selecting a predetermined pattern among the identified fine patterns; and selecting other patterns separated at least a predetermined distance from the predetermined pattern to define the first exposure patterns.

Claim 14

The method according to claim 11 , wherein the other patterns selected as the first exposure patterns are separated from each other by a distance of at least four times the width of each of the other patterns.

Claim 15

The method according to claim 10 , wherein defining the second exposure patterns comprises performing a logical disjunction (OR) operation on the target patterns and the first exposure patterns.

Claim 16

The method according to claim 10 , wherein comparing the first and second exposure patterns with the target patterns comprises: performing a logical exclusive disjunction (XOR) operation on the first and second exposure patterns to form third exposure patterns; and comparing the third exposure patterns with the target patterns.

Claim 17

The method according to claim 10 , wherein comparing the fourth and fifth exposure patterns with the target patterns comprises: performing a logical exclusive disjunction (XOR) operation on the fourth and fifth exposure patterns to form sixth exposure patterns; and confirming whether or not the sixth exposure patterns are within an allowable range of error by comparing the sixth exposure patterns with the target patterns.