Patent CH218488A successfully refreshed from Google Patents.
US6934007B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for photolithography using multiple illuminations and a single fine feature mask
Assignee: Massachusetts Institute of Technology
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Filing: 2003-05-29
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Granted: 2005-08-23
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Expires: 2023-05-29
Abstract
Abstract A method forms a feature pattern on a substrate by exposing the substrate, using a mask having a pattern of features thereon, with illumination having a first set of settings. The substrate is exposed a second time, using the same mask having the pattern of features thereon, with illumination having a second set of settings. The mask having the pattern of features thereon remains stationary between the two illumination exposures of the substrate.
Inventors
- 👤 Michael Fritze
- 👤 Brian Tyrrell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 21:45
CPC Classifications
G; G03; G03B; G03B27/00; G03B27/32; G03B27/46; G03B27/48; G03F; G03F7/00; G03F7/70; G03F7/70425; G03F7/70466
Claims Analysis
Total Claims: 73
Claim 1
Independent Claim
130 words
A method of forming a feature pattern on a substrate, comprising: (a) exposing the substrate, using a mask having a pattern of features thereon, with an illuminator having a first set of settings, to produce an exposure resultant dense feature pattern on the substrate, the exposure resultant dense feature pattern having a predetermined pitch; and (b) exposing the substrate, using the same mask having the pattern of features thereon, with the illuminator having a second set of settings, the second set of settings being different from the first set of settings, to produce an exposure resultant dense feature pattern on the substrate, the exposure resultant dense feature pattern having a same predetermined pitch as the exposure resultant dense feature pattern produced by the illuminator having the first set of settings.
Claim 2
Independent Claim
130 words
A method of forming a feature pattern on a substrate, comprising: (a) exposing the substrate, using a mask having a pattern of features thereon, with an illuminator having a first set of settings, to produce an exposure resultant dense feature pattern on the substrate, the exposure resultant dense feature pattern having a predetermined pitch; and (b) exposing the substrate, using the same mask having the pattern of features thereon, with the illuminator having a second set of settings, the second set of settings being different from the first set of settings, to produce an exposure resultant dense feature pattern on the substrate, the exposure resultant dense feature pattern having a same predetermined pitch as the exposure resultant dense feature pattern produced by the illuminator having the first set of settings.
Claim 3
Dependent Claim
23 words
The method as claimed in claim 1 , further comprising: (c) exposing the substrate to trim portions of the pattern on the substrate.
Claim 4
Dependent Claim
21 words
The method as claimed in claim 1 , where the pattern of features corresponds to a template pattern of dense features.
Claim 5
Dependent Claim
49 words
The method as claimed in claim 1 , wherein the mask having a pattern of features thereon remains stationary between the exposure of the substrate by the illuminator having the first set of settings and the exposure of the substrate by the illuminator having the second set of settings.
Claim 6
Dependent Claim
20 words
The method as claimed in claim 1 , wherein the pattern of features is a pattern of regular dense features.
Claim 7
Dependent Claim
23 words
The method as claimed in claim 1 , wherein the pattern of features is a pattern of dense features of a critical dimension.
Claim 8
Dependent Claim
27 words
The method as claimed in claim 1 , wherein the pattern of features is a pattern of regular dense features of a predetermined pitch and critical dimension.
Claim 9
Dependent Claim
15 words
The method as claimed in claim 1 , wherein the mask is a phase-shift mask.
Claim 10
Dependent Claim
16 words
The method as claimed in claim 8 , wherein the phase-shift mask includes globally periodic features.
Claim 11
Dependent Claim
16 words
The method as claimed in claim 8 , wherein the phase-shift mask includes locally periodic features.
Claim 12
Dependent Claim
25 words
The method as claimed in claim 8 , wherein the phase-shift mask includes printable features, corresponding to features desired on the substrate, and sub-resolution features.
Claim 13
Dependent Claim
32 words
The method as claimed in claim 11 , wherein the sub-resolution features of the phase-shift mask, when used to exposure the substrate, result in the formation of solid patterns on the substrate.
Claim 14
Dependent Claim
16 words
The method as claimed in claim 8 , wherein the phase-shift mask includes optical proximity correction.
Claim 15
Dependent Claim
16 words
The method as claimed in claim 8 , wherein the phase-shift mask includes spatial frequency correction.
Claim 16
Dependent Claim
24 words
The method as claimed in claim 1 , wherein any exposure of the substrate consists of a sequence of sub-threshold and/or above threshold exposures.
Claim 17
Dependent Claim
34 words
The method as claimed in claim 15 , in which a sub-threshold exposure is used to locally modify the critical dimension produced by exposing the substrate to provide a pattern of regular dense features.
Claim 18
Dependent Claim
16 words
The method as claimed in claim 1 , wherein the mask is an attenuating phase-shift mask.
Claim 19
Dependent Claim
15 words
The method as claimed in claim 1 , wherein the mask is a chrome mask.
Claim 20
Dependent Claim
25 words
The method as claimed in claim 1 , wherein the first set of settings and the second set of settings differ in illuminator aperture design.
Claim 21
Dependent Claim
25 words
The method as claimed in claim 1 , wherein the first set of settings and the second set of settings differ in illumination wavefront magnitude.
Claim 22
Dependent Claim
25 words
The method as claimed in claim 1 , wherein the first set of settings and the second set of settings differ in illumination wavefront phase.
Claim 23
Dependent Claim
26 words
The method as claimed in claim 1 , wherein the first set of settings and the second set of settings differ in illumination wavefront partial coherence.
Claim 24
Dependent Claim
23 words
The method as claimed in claim 1 , wherein the first set of settings and the second set of settings differ in wavelength.
Claim 25
Dependent Claim
23 words
The method as claimed in claim 1 , wherein the first set of settings and the second set of settings differ in polarization.
Claim 26
Dependent Claim
32 words
The method as claimed in claim 1 , wherein the first set of settings includes using a phase shifter in the illuminator so as to shift the created pattern in Cartesian space.
Claim 27
Dependent Claim
32 words
The method as claimed in claim 1 , wherein the second set of settings includes using a phase shifter in the illuminator so as to shift the created pattern in Cartesian space.
Claim 28
Dependent Claim
19 words
The method as claimed in claim 1 , wherein the pattern of features is a pattern of dense holes.
Claim 29
Dependent Claim
19 words
The method as claimed in claim 1 , wherein the pattern of features is a pattern of dense pillars.
Claim 30
Dependent Claim
85 words
The method as claimed in claim 1 , further comprising exposing the substrate, using the same mask having the pattern of features thereon, with the illuminator having a third set of settings, the third set of settings being different from the first set of settings, to produce an exposure resultant dense fine feature pattern on the substrate, the exposure resultant dense feature pattern having a same predetermined pitch as the exposure resultant dense feature pattern produced by the illuminator having the first set of settings.
Claim 31
Independent Claim
164 words
A method for defining multiple fine features in a resist, comprising: (a) exposing the substrate, using a mask having a pattern of features thereon, with an illuminator having a first set of settings, to produce an exposure resultant dense feature pattern on the substrate, the exposure resultant dense feature pattern having a predetermined pitch; (b) exposing the substrate, using the same mask having the pattern of features thereon, with the illuminator having a second set of settings, the second set of settings being different from the first set of settings, to produce an exposure resultant dense feature pattern on the substrate, the exposure resultant dense feature pattern having a same predetermined pitch as the exposure resultant dense feature pattern produced by the illuminator having the first set of settings; and (c) sub-threshold exposing the substrate using a gray-tone mask to locally partially expose different regions of the substrate, thereby allowing for a range of critical dimensions to be defined by the feature definition exposure.
Claim 32
Independent Claim
164 words
A method for defining multiple fine features in a resist, comprising: (a) exposing the substrate, using a mask having a pattern of features thereon, with an illuminator having a first set of settings, to produce an exposure resultant dense feature pattern on the substrate, the exposure resultant dense feature pattern having a predetermined pitch; (b) exposing the substrate, using the same mask having the pattern of features thereon, with the illuminator having a second set of settings, the second set of settings being different from the first set of settings, to produce an exposure resultant dense feature pattern on the substrate, the exposure resultant dense feature pattern having a same predetermined pitch as the exposure resultant dense feature pattern produced by the illuminator having the first set of settings; and (c) sub-threshold exposing the substrate using a gray-tone mask to locally partially expose different regions of the substrate, thereby allowing for a range of critical dimensions to be defined by the feature definition exposure.
Claim 33
Dependent Claim
28 words
The method as claimed in claim 30 , wherein the gray-tone mask is a mask with sub-resolution features of varying pitch that produce a similar dose variation effect.
Claim 34
Dependent Claim
85 words
The method as claimed in claim 30 , further comprising exposing the substrate, using the same mask having the pattern of features thereon, with the illuminator having a third set of settings, the third set of settings being different from the first set of settings, to produce an exposure resultant dense fine feature pattern on the substrate, the exposure resultant dense feature pattern having a same predetermined pitch as the exposure resultant dense feature pattern produced by the illuminator having the first set of settings.
Claim 35
Independent Claim
78 words
A method of forming a feature pattern on a substrate, comprising: (a) exposing the substrate, using a mask having a pattern of features thereon, with X-dipole illumination, to produce a dense feature illumination pattern on the substrate; (b) exposing the substrate, using the same mask having the pattern of features thereon, with Y-dipole illumination, to produce a dense feature illumination pattern on the substrate; and (c) exposing the substrate to trim portions of the pattern on the substrate.
Claim 36
Independent Claim
78 words
A method of forming a feature pattern on a substrate, comprising: (a) exposing the substrate, using a mask having a pattern of features thereon, with X-dipole illumination, to produce a dense feature illumination pattern on the substrate; (b) exposing the substrate, using the same mask having the pattern of features thereon, with Y-dipole illumination, to produce a dense feature illumination pattern on the substrate; and (c) exposing the substrate to trim portions of the pattern on the substrate.
Claim 37
Dependent Claim
38 words
The method as claimed in claim 33 , wherein the mask having a pattern of features thereon remains stationary between the exposure of the substrate by the X-dipole illumination and the exposure of the substrate by Y-dipole illumination.
Claim 38
Dependent Claim
15 words
The method as claimed in claim 33 , wherein the mask is a chrome mask.
Claim 39
Dependent Claim
19 words
The method as claimed in claim 33 , wherein the pattern of features is a pattern of dense holes.
Claim 40
Dependent Claim
19 words
The method as claimed in claim 33 , wherein the pattern of features is a pattern of dense pillars.
Claim 41
Independent Claim
79 words
A method forming a feature pattern on a substrate, comprising: (a) exposing the substrate, using a mask having a pattern of features thereon, with X-dipole illumination, to produce a dense feature illumination pattern on the substrate, the pattern of features of the mask corresponding to a template pattern of dense features; and (b) exposing the substrate, using the same mask having the pattern of features thereon, with Y-dipole illumination, to produce a dense feature illumination pattern on the substrate.
Claim 42
Independent Claim
79 words
A method forming a feature pattern on a substrate, comprising: (a) exposing the substrate, using a mask having a pattern of features thereon, with X-dipole illumination, to produce a dense feature illumination pattern on the substrate, the pattern of features of the mask corresponding to a template pattern of dense features; and (b) exposing the substrate, using the same mask having the pattern of features thereon, with Y-dipole illumination, to produce a dense feature illumination pattern on the substrate.
Claim 43
Dependent Claim
21 words
The method as claimed in claim 38 , wherein the pattern of features is a template pattern of regular dense features.
Claim 44
Dependent Claim
27 words
The method as claimed in claim 38 , wherein the pattern of features is a template pattern of dense features of a predetermined pitch and critical dimension.
Claim 45
Dependent Claim
28 words
The method as claimed in claim 38 , wherein the pattern of features is a template pattern of regular dense features of a predetermined pitch and critical dimension.
Claim 46
Dependent Claim
20 words
The method as claimed in claim 38 , wherein the pattern of features is a template pattern of dense holes.
Claim 47
Dependent Claim
20 words
The method as claimed in claim 38 , wherein the pattern of features is a template pattern of dense pillars.
Claim 48
Independent Claim
72 words
A method of forming a feature pattern on a substrate, comprising: (a) exposing the substrate, using a mask having a pattern of features thereon, with X-dipole illumination, to produce a dense feature illumination pattern on the substrate, the mask is being a phase-shift mask; and (b) exposing the substrate, using the same mask having the pattern of features thereon, with Y-dipole illumination, to produce a dense feature illumination pattern on the substrate.
Claim 49
Independent Claim
72 words
A method of forming a feature pattern on a substrate, comprising: (a) exposing the substrate, using a mask having a pattern of features thereon, with X-dipole illumination, to produce a dense feature illumination pattern on the substrate, the mask is being a phase-shift mask; and (b) exposing the substrate, using the same mask having the pattern of features thereon, with Y-dipole illumination, to produce a dense feature illumination pattern on the substrate.
Claim 50
Dependent Claim
16 words
The method as claimed in claim 44 , wherein the phase-shift mask includes globally periodic features.
Claim 51
Dependent Claim
16 words
The method as claimed in claim 44 , wherein the phase-shift mask includes locally periodic features.
Claim 52
Dependent Claim
25 words
The method as claimed in claim 44 , wherein the phase-shift mask includes printable features, corresponding to features desired on the substrate, and sub-resolution features.
Claim 53
Dependent Claim
32 words
The method as claimed in claim 47 , wherein the sub-resolution features of the phase-shift mask, when used to exposure the substrate, result in the formation of solid patterns on the substrate.
Claim 54
Dependent Claim
16 words
The method as claimed in claim 44 , wherein the phase-shift mask includes optical proximity correction.
Claim 55
Dependent Claim
16 words
The method as claimed in claim 44 , wherein the phase-shift mask includes spatial frequency correction.
Claim 56
Independent Claim
72 words
A method of forming a feature pattern on a substrate, comprising: (a) exposing the substrate, using a mask having a pattern of features thereon, with X-dipole illumination, to produce a dense feature illumination pattern on the substrate, the mask being an attenuating phase-shift mask; and (b) exposing the substrate, using the same mask having the pattern of features thereon, with Y-dipole illumination, to produce a dense feature illumination pattern on the substrate.
Claim 57
Independent Claim
72 words
A method of forming a feature pattern on a substrate, comprising: (a) exposing the substrate, using a mask having a pattern of features thereon, with X-dipole illumination, to produce a dense feature illumination pattern on the substrate, the mask being an attenuating phase-shift mask; and (b) exposing the substrate, using the same mask having the pattern of features thereon, with Y-dipole illumination, to produce a dense feature illumination pattern on the substrate.
Claim 58
Independent Claim
86 words
A method of forming a feature pattern on a substrate, comprising: (a) exposing the substrate, using a mask having a pattern of features thereon, with X-dipole illumination, to produce a dense feature illumination pattern on the substrate; and (b) exposing the substrate, using the same mask having the pattern of features thereon, with Y-dipole illumination, to produce a dense feature illumination pattern on the substrate, the Y-dipole illumination using a phase shifter in a dipole illuminator so as to shift the created pattern in Cartesian space.
Claim 59
Independent Claim
86 words
A method of forming a feature pattern on a substrate, comprising: (a) exposing the substrate, using a mask having a pattern of features thereon, with X-dipole illumination, to produce a dense feature illumination pattern on the substrate; and (b) exposing the substrate, using the same mask having the pattern of features thereon, with Y-dipole illumination, to produce a dense feature illumination pattern on the substrate, the Y-dipole illumination using a phase shifter in a dipole illuminator so as to shift the created pattern in Cartesian space.
Claim 60
Independent Claim
86 words
A method of forming a feature pattern on a substrate, comprising: (a) exposing the substrate, using a mask having a pattern of features thereon, with X-dipole illumination, to produce a dense feature illumination pattern on the substrate, the X-dipole illumination using a phase shifter in a dipole illuminator so as to shift the created pattern in Cartesian space; and (b) exposing the substrate, using the same mask having the pattern of features thereon, with Y-dipole illumination, to produce a dense feature illumination pattern on the substrate.
Claim 61
Independent Claim
86 words
A method of forming a feature pattern on a substrate, comprising: (a) exposing the substrate, using a mask having a pattern of features thereon, with X-dipole illumination, to produce a dense feature illumination pattern on the substrate, the X-dipole illumination using a phase shifter in a dipole illuminator so as to shift the created pattern in Cartesian space; and (b) exposing the substrate, using the same mask having the pattern of features thereon, with Y-dipole illumination, to produce a dense feature illumination pattern on the substrate.
Claim 62
Independent Claim
93 words
A method for defining multiple fine features in a resist, comprising: (a) exposing the substrate, using a mask having a pattern of features thereon, with X-dipole illumination, to produce a dense fine feature illumination pattern on the substrate; (b) exposing the substrate, using the same mask having the pattern of features thereon, with Y-dipole illumination, to produce a dense fine feature illumination pattern on the substrate; and (c) sub-threshold exposing the substrate using a gray-tone mask to locally partially expose different regions of the substrate to modify critical dimensions of the fine features.
Claim 63
Independent Claim
93 words
A method for defining multiple fine features in a resist, comprising: (a) exposing the substrate, using a mask having a pattern of features thereon, with X-dipole illumination, to produce a dense fine feature illumination pattern on the substrate; (b) exposing the substrate, using the same mask having the pattern of features thereon, with Y-dipole illumination, to produce a dense fine feature illumination pattern on the substrate; and (c) sub-threshold exposing the substrate using a gray-tone mask to locally partially expose different regions of the substrate to modify critical dimensions of the fine features.
Claim 64
Dependent Claim
28 words
The method as claimed in claim 54 , wherein the gray-tone mask is a mask with sub-resolution features of varying pitch that produce a similar dose variation effect.
Claim 65
Independent Claim
60 words
A method for photolithographically forming a wide range of useful patterns, comprising: (a) illuminating, with an illuminator, a same template mask multiple times, for each exposure of the same template mask, the illuminator having different illumination parameters, to produce an exposure resultant dense fine feature pattern on the substrate, each exposure resultant dense fine feature pattern having a same pitch.
Claim 66
Independent Claim
60 words
A method for photolithographically forming a wide range of useful patterns, comprising: (a) illuminating, with an illuminator, a same template mask multiple times, for each exposure of the same template mask, the illuminator having different illumination parameters, to produce an exposure resultant dense fine feature pattern on the substrate, each exposure resultant dense fine feature pattern having a same pitch.
Claim 67
Dependent Claim
18 words
The method as claimed in claim 56 , wherein the different illumination parameters differ in illuminator aperture design.
Claim 68
Dependent Claim
18 words
The method as claimed in claim 56 , wherein the different illumination parameters differ in illumination wavefront magnitude.
Claim 69
Dependent Claim
18 words
The method as claimed in claim 56 , wherein the different illumination parameters differ in illumination wavefront phase.
Claim 70
Dependent Claim
19 words
The method as claimed in claim 56 , wherein the different illumination parameters differ in illumination wavefront partial coherence.
Claim 71
Dependent Claim
16 words
The method as claimed in claim 56 , wherein the different illumination parameters differ in wavelength.
Claim 72
Dependent Claim
16 words
The method as claimed in claim 56 , wherein the different illumination parameters differ in polarization.
Claim 73
Dependent Claim
32 words
The method as claimed in claim 56 , wherein the different illumination parameters differ by using a phase shifter in the illuminator so as to shift the created pattern in Cartesian space.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2008-08-22 | 2009-02-21 | 2009-08-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2012-08-22 | 2013-02-21 | 2013-08-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2016-08-22 | 2017-02-21 | 2017-08-23 | $7700.00 | Window Closed / Lapsed |