Abstract The fine dark features in the images projected from strong phase-shifting masks used for microdevice lithography are accompanied by 180° shifts in the optical phase, produced by a topography pattern distinct from the pattern of apertures that define the bright features. A generic topography pattern can be formed on the substrate underlying a continuous opaque mask layer which subsequently is patterned with a device-specific array of apertures. When the image projected from a phase-shifting mask comprised of the generic topography pattern and the device-specific aperture pattern is combined with a device-specific image projected from an associated conventional photomask, the photoresist pattern that results corresponds to desired device layers with the imaging advantages of strong phase-shifting masks, but without the need for specific patterning of the topography pattern.
Inventors
👤 Marc David Levenson
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-11-07 21:59
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/26; G03F1/30
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
211 words
A method for designing a device, comprising: a) recording characteristic locations of device features manufacturable using strong phase shift photoresist exposure technology and patterning a continuous opaque film covering a first generic substrate for a strong phase shift mask, wherein a generic substrate comprises: a substrate having a first surface and a second surface, wherein the first surface has a first very large plurality of first areas for producing a first phase of light interacting with the first surface, and wherein the first surface has a second very large plurality of second areas for producing a second phase of light interacting with the first surface; and wherein the characteristic locations of device features are located at contiguous boundaries of the first and second areas; and wherein patterning the continuous opaque film comprises opening a large plurality of apertures in the film, the film attached to the first surface, wherein at least some of the apertures allow light to interact with the first surface on adjacent sides of a plurality of boundaries of a first area and a second area, and wherein a plurality of the first and the second areas are completely covered with the opaque film; and b) choosing which of the characteristic locations to use for the device features.
Claim 2
Independent Claim
211 words
A method for designing a device, comprising: a) recording characteristic locations of device features manufacturable using strong phase shift photoresist exposure technology and patterning a continuous opaque film covering a first generic substrate for a strong phase shift mask, wherein a generic substrate comprises: a substrate having a first surface and a second surface, wherein the first surface has a first very large plurality of first areas for producing a first phase of light interacting with the first surface, and wherein the first surface has a second very large plurality of second areas for producing a second phase of light interacting with the first surface; and wherein the characteristic locations of device features are located at contiguous boundaries of the first and second areas; and wherein patterning the continuous opaque film comprises opening a large plurality of apertures in the film, the film attached to the first surface, wherein at least some of the apertures allow light to interact with the first surface on adjacent sides of a plurality of boundaries of a first area and a second area, and wherein a plurality of the first and the second areas are completely covered with the opaque film; and b) choosing which of the characteristic locations to use for the device features.