Semiconductor device and method of manufacturing the same

Claim 1

A semiconductor device provided with a CMOS-FET circuit, comprising: a first element isolating film filling a trench provided around an NMOS forming region; a second element isolating film filling a trench provided around a PMOS forming region; a first insulating film provided on the first and second element isolating films; a second insulating film provided on the first insulating film; a tensile stress film provided on the second insulating film, penetrating the first and second insulating films, extending into the first element isolating film, and having a tensile stress, the tensile stress film having an end; and a compressive stress film provided on the second insulating film, penetrating the first and second insulating film, extending into the second element isolating film, and having a compressive stress, the compressive stress film having an end; wherein the end of the tensile stress film contacts the end of the compressive stress film above a region between the NMOS forming region and the PMOS forming region.

Claim 12

A method of manufacturing a semiconductor device provided with a CMOS-FET circuit, comprising: forming a first element isolating film filling a trench around an NMOS forming region on a semiconductor substrate; forming a second element isolating film filling a trench around a PMOS forming region on the semiconductor substrate; forming a first insulating film on the first and second element isolating films; forming a second insulating film on the first insulating film; forming a first trench penetrating the first and second insulating films and extending into the first element isolating film; forming a tensile stress film in the first trench and on the second insulating film, the tensile stress film having an end; forming a second trench penetrating the first and second insulating films and extending into the second element isolating film; and forming a compressive stress film in the second trench and on the second insulating film, the compressive stress film having an end; wherein the end of the tensile stress film contacts the end of the compressive stress film above a region between the NMOS forming region and the PMOS forming region.

Claim 13

A method of manufacturing a semiconductor device provided with a CMOS-FET circuit, comprising: forming a first element isolating film filling a trench around an NMOS forming region on a semiconductor substrate; forming a second element isolating film filling a trench around a PMOS forming region on the semiconductor substrate; forming a first insulating film on the first and second element isolating films; forming a second insulating film on the first insulating film; forming a first trench penetrating the first and second insulating films and extending into the first element isolating film; forming a tensile stress film in the first trench and on the second insulating film, the tensile stress film having an end; forming a second trench penetrating the first and second insulating films and extending into the second element isolating film; and forming a compressive stress film in the second trench and on the second insulating film, the compressive stress film having an end; wherein the end of the tensile stress film contacts the end of the compressive stress film above a region between the NMOS forming region and the PMOS forming region.

Claim 14

A method of manufacturing a semiconductor device provided with a CMOS-FET circuit, comprising: forming a first element isolating film filling a trench around an NMOS forming region on a semiconductor substrate; forming a second element isolating film filling a trench around a PMOS forming region on the semiconductor substrate; forming a first insulating film on the first and second element isolating films; forming a second insulating film on the first insulating film; forming a first trench penetrating the first and second insulating films and extending into the first element isolating film; forming a tensile stress film in the first trench and on the second insulating film, the tensile stress film having an end; forming a second trench penetrating the first and second the insulating films and extending into the second element isolating film; and forming a compressive stress film in the second trench and on the second insulating film; wherein the end of the tensile stress film contacts the compressive stress film above the first element isolating film.

Claim 15

A method of manufacturing a semiconductor device provided with a CMOS-FET circuit, comprising: forming a first element isolating film filling a trench around an NMOS forming region on a semiconductor substrate; forming a second element isolating film filling a trench around a PMOS forming region on the semiconductor substrate; forming a first insulating film on the first and second element isolating films; forming a second insulating film on the first insulating film; forming a first trench penetrating the first and second insulating films and extending into the first element isolating film; forming a tensile stress film in the first trench and on the second insulating film, the tensile stress film having an end; forming a second trench penetrating the first and second the insulating films and extending into the second element isolating film; and forming a compressive stress film in the second trench and on the second insulating film; wherein the end of the tensile stress film contacts the compressive stress film above the first element isolating film.