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US7091561B2
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Field effect transistor and method of manufacturing the same
Assignee: Toshiba Corp
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Filing: 2004-06-09
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Granted: 2006-08-15
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Expires: 2024-06-09
Abstract
Abstract There is provided a field effect transistor including: a first insulating film formed on a semiconductor substrate, and including at least a metal oxide having a crystallinity and different in a lattice distance of a crystal on an interface from the semiconductor substrate; a convex channel region formed above the first insulating film, and different in the lattice distance from the semiconductor substrate; a source region and a drain region formed above the first insulating film on side surfaces of the channel region, respectively; a second insulating film formed right above the channel region; a gate insulating film formed on a side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain regions are formed; and a gate electrode formed through the gate insulating film on at least the side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain region are formed.
Inventors
- 👤 Daisuke Matsushita
- 👤 Yukie Nishikawa
- 👤 Hideki Satake
- 👤 Noburu Fukushima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:49
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/024; H10D30/60; H10D30/62; H10D30/67; H10D30/6758; H10D30/791; H10D86/00; H10D86/01; H10D86/201
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
165 words
A field effect transistor comprising: a first insulating film formed on a semiconductor substrate, and including at least a metal oxide having a crystallinity and different in a lattice distance of a crystal on an interface from the semiconductor substrate; a convex channel region formed above the first insulating film, and different in the lattice distance from the semiconductor substrate; a source region and a drain region formed above the first insulating film on side surfaces of the channel region, respectively; a second insulating film formed right above the channel region; a gate insulating film formed on a side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain regions are formed; and a gate electrode formed to cover at least the gate insulating film on the side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain region are formed.
Claim 2
Dependent Claim
165 words
A field effect transistor comprising: a first insulating film formed on a semiconductor substrate, and including at least a metal oxide having a crystallinity and different in a lattice distance of a crystal on an interface from the semiconductor substrate; a convex channel region formed above the first insulating film, and different in the lattice distance from the semiconductor substrate; a source region and a drain region formed above the first insulating film on side surfaces of the channel region, respectively; a second insulating film formed right above the channel region; a gate insulating film formed on a side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain regions are formed; and a gate electrode formed to cover at least the gate insulating film on the side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain region are formed.
Claim 3
Dependent Claim
52 words
The field effect transistor according to claim 1 , wherein the lattice distance of the metal oxide included in the first insulating film differs from the lattice distance when an oxygen blending ratio of the metal oxide is a stoichiometric ratio, by setting the oxygen blending ratio lower than the stoichiometric ratio.
Claim 4
Dependent Claim
38 words
The field effect transistor according to claim 1 , wherein a crystalline metal oxide having a rock-salt structure is put between at least one of the metal oxides included in the first insulating film and the channel region.
Claim 5
Dependent Claim
37 words
The field effect transistor according to claim 1 , wherein at least one of the metal oxides included in the first insulating film includes one or more metal elements selected from a group consisting of rare-earth elements.
Claim 6
Dependent Claim
55 words
The field effect transistor according to claim 1 , wherein a region, in which a composition of the metal oxide included in the insulating film is partially modulated, is provided in the first insulating film so as to be in contact with the channel region, thereby electrically connecting the semiconductor substrate to the channel region.
Claim 7
Dependent Claim
33 words
The field effect transistor according to claim 1 , wherein the second insulating film includes at least a metal oxide having the crystallinity and different in the lattice distance from the semiconductor substrate.
Claim 8
Dependent Claim
34 words
The field effect transistor according to claim 6 , wherein the first insulating film and the second insulating film are equal in a direction in which a strain is applied to the channel region.
Claim 9
Dependent Claim
37 words
The field effect transistor according to claim 6 , wherein at least one of the metal oxides included in the second insulating film includes one or more metal elements selected from a group consisting of rare-earth elements.
Claim 10
Dependent Claim
52 words
The field effect transistor according to claim 6 , wherein the lattice distance of the metal oxide included in the second insulating film differs from the lattice distance when an oxygen blending ratio of the metal oxide is a stoichiometric ratio, by setting the oxygen blending ratio lower than the stoichiometric ratio.
Claim 11
Dependent Claim
38 words
The field effect transistor according to claim 6 , wherein a crystalline metal oxide having a rock-salt structure is put between at least one of the metal oxides included in the second insulating film and the channel region.
Claim 12
Dependent Claim
33 words
The field effect transistor according to claim 1 , wherein the gate insulating film includes at least a metal oxide having the crystallinity and different in the lattice distance from the semiconductor substrate.
Claim 13
Dependent Claim
33 words
The field effect transistor according to claim 11 , wherein the first insulating film and the gate insulating film differ in a direction in which a strain is applied to the channel region.
Claim 14
Dependent Claim
37 words
The field effect transistor according to claim 11 , wherein at least one of the metal oxides included in the gate insulating film includes one or more metal elements selected from a group consisting of rare-earth elements.
Claim 15
Dependent Claim
52 words
The field effect transistor according to claim 11 , wherein the lattice distance of the metal oxide included in the gate insulating film differs from the lattice distance when an oxygen blending ratio of the metal oxide is a stoichiometric ratio, by setting the oxygen blending ratio lower than the stoichiometric ratio.
Claim 16
Dependent Claim
38 words
The field effect transistor according to claim 11 , wherein a crystalline metal oxide having a rock-salt structure is put between at least one of the metal oxides included in the gate insulating film and the channel region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2009-08-14 | 2010-02-13 | 2010-08-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2013-08-14 | 2014-02-13 | 2014-08-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2017-08-14 | 2018-02-13 | 2018-08-15 | $7700.00 | Window Closed / Lapsed |