Semiconductor device and manufacturing method thereof

Abstract

Abstract PROBLEM TO BE SOLVED: To provide a semiconductor device which has a structure capable of contriving an increase in the performance of the device and uses at least each one part of the side surfaces of projected semiconductor layers as a channel region. SOLUTION: A semiconductor device is provided with projected semiconductor layers 13, source and drain regions 17 and 17 provided in the layers 13, and a gate electrode 16 which has a sidewall gate part provided in a state that the sidewall gate is insulated from these layers 13 on the side surfaces of the layers 13 and gives a field effect to a channel region between the regions 17 and 17 via at least the side surfaces of the layers 13. The distance between the regions 17 and 17 is changed on the side surfaces of the layers 13.

Inventors

• 👤 Katsuhiko Hieda
• 👤 克彦 稗田

Bibliographic Details